MEMS microphone
A MEMS microphone includes a diaphragm having conductivity, first and second variable capacitors respectively including first and second fixed electrodes, a first voltage output section that outputs a first voltage changed according to a change in a capacitance of the first variable capacitor, and a second voltage output section that outputs a second voltage changed according to a change in a capacitance of the second variable capacitor. The first and second fixed electrodes face the diaphragm. The capacitances of the first and second variable capacitors are changed in accordance with a vibration of the diaphragm. A first bias voltage is applied to the first fixed electrode. A reference voltage is applied to the second fixed electrode. A second bias voltage is applied to the diaphragm. A difference between the second bias voltage and the reference voltage is half of a difference between the first bias voltage and the reference voltage.
1. A micro electro mechanical systems (MEMS) microphone comprising:
a diaphragm having conductivity;
a first variable capacitor including a first fixed electrode facing the diaphragm, a capacitance of the first variable capacitor being changed in accordance with a vibration of the diaphragm;
a second variable capacitor including a second fixed electrode facing the diaphragm, a capacitance of the second variable capacitor being changed in accordance with the vibration of the diaphragm;
a first voltage output section configured to output a first voltage that is changed in accordance with a change in the capacitance of the first variable capacitor; and
a second voltage output section configured to output a second voltage that is changed in accordance with a change in the capacitance of the second variable capacitor,
wherein a first bias voltage is applied to the first fixed electrode,
wherein a reference voltage is applied to the second fixed electrode, and
wherein a second bias voltage is applied to the diaphragm, a difference between the second bias voltage and the reference voltage being half of a difference between the first bias voltage and the reference voltage.
2. The MEMS microphone as claimed in claim 1 , wherein an area of the first fixed electrode is equal to an area of the second fixed electrode, and a distance between the first fixed electrode and the diaphragm is equal to a distance between the second fixed electrode and the diaphragm.
3. The MEMS microphone as claimed in claim 1 , wherein the second fixed electrode is connected to a ground wire.
4. The MEMS microphone as claimed in claim 1 , further comprising:
a first bias generation circuit configured to generate the first bias voltage; and
a second bias generation circuit configured to generate the second bias voltage,
wherein the first bias generation circuit includes a plurality of charge pump circuits connected in series and is configured to output the first bias voltage from one charge pump circuit among the plurality of charge pump circuits, and
wherein the second bias generation circuit is configured to output a voltage output from a front stage circuit as the second bias voltage, the front stage circuit being one charge pump circuit among charge pump circuits located on a front stage side in the plurality of charge pump circuits.
5. The MEMS microphone as claimed in claim 1 , further comprising a fixing plate to which the first fixed electrode and the second fixed electrode are fixed, the fixing plate having an electrically insulating property and facing the diaphragm,
wherein the first fixed electrode and the second fixed electrode are disposed on the fixing plate on a side closer to the diaphragm.
6. The MEMS microphone as claimed in claim 5 , wherein the fixing plate has a protrusion that fills a gap between the first fixed electrode and the second fixed electrode.
7. The MEMS microphone as claimed in claim 5 , further comprising a semiconductor substrate having a through-hole where the diaphragm faces,
wherein the diaphragm, the first fixed electrode, the second fixed electrode, and the fixing plate are formed on the semiconductor substrate by using a semiconductor manufacturing technique.