Memory device with improved program performance and method of operating the same
A memory device includes a memory cell region including a first metal pad, a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first and second metal pads, a memory cell array in the memory cell region including cell strings including memory cells, word lines respectively connected to the memory cells, bit lines connected to one side of the cell strings, and a ground selection line connected to the cell strings, a control logic in the peripheral circuit region including a precharge control circuit for controlling precharge on partial cell strings among the cell strings and controlling a plurality of data program steps on the memory cells, and a row decoder in the peripheral circuit region for activating at least some of the word lines in response to a control of the control logic.
1. A memory device, comprising:
a memory cell region including a first metal pad;
a peripheral circuit region including a second metal pad and being vertically connected to the memory cell region by the first metal pad and the second metal pad;
a memory cell array provided in the memory cell region and including a plurality of cell strings including:
a plurality of memory cells;
a plurality of word lines respectively connected to the plurality of memory cells;
a plurality of bit lines connected to one side of the plurality of cell strings;
one or more common source lines connected to another side of the plurality of cell strings; and
a ground selection line connected to the plurality of cell strings;
a control logic provided in the peripheral circuit region and including a precharge control circuit configured to control precharge on partial cell strings among the plurality of cell strings and control a plurality of data program steps on the plurality of memory cells;
a row decoder provided in the peripheral circuit region and configured to activate at least some of the plurality of word lines based on a control of the control logic; and
a common source line driver configured to activate the one or more common source lines based on the control of the control logic,
wherein the precharge control circuit is configured to control the row decoder so that, during the precharge of the partial cell strings, a turn-on voltage is applied to a selection word line and a word line adjacent to the selection word line, among the plurality of word lines, and a voltage at a level lower than that of the turn-on voltage is applied to another word line among the plurality of word lines, and is configured to control the common source line driver so that, during the precharge of the partial cell strings, a precharge voltage is applied to the one or more common source lines.
2. The memory device of claim 1 , wherein the plurality of data program steps comprise:
a first program operation; and
a second program operation, the first and second program operations sequentially forming threshold voltage distributions for the plurality of memory cells, and
wherein the precharge control circuit is configured to control the row decoder so that, during the second program operation, the turn-on voltage is applied to the selection word line and the word line adjacent to the selection word line.
3. The memory device of claim 2 , wherein, a first level of the turn-on voltage during the precharge for the first program operation is lower than a second level of the turn-on voltage during the precharge for the second program operation.
4. The memory device of claim 1 , further comprising:
a page buffer provided in the peripheral circuit region for activating at least some of the plurality of bit lines based on the control of the control logic,
wherein the precharge control circuit is configured to control the page buffer so that a precharge voltage is applied to partial bit lines, among the plurality of bit lines, during the precharge of the partial cell strings, and
wherein a word line adjacent to the selection word line includes a word line arranged on the selection word line.
5. The memory device of claim 1 , further comprising:
a page buffer provided in the peripheral circuit region for activating at least some of the plurality of bit lines based on the control of the control logic,
wherein the precharge control circuit is configured to control the page buffer so that a precharge voltage is applied to partial bit lines, among the plurality of bit lines, during a period after the precharge of the partial cell strings.
6. The memory device of claim 1 , the memory cell array further comprising:
a plurality of dummy word lines respectively connected to the plurality of memory cells, wherein during the precharge of the partial cell strings, a level of voltage applied to the dummy word lines is lower than a level of the turn-on voltage.
7. The memory device of claim 1 , wherein the precharge control circuit is configured to control the row decoder so that a ground voltage is applied to a word line other than the selection word line and the word line adjacent to the selection word line.
8. The memory device of claim 1 , wherein the partial cell strings among the plurality of cell strings comprise one or more non-selection cell strings.
9. The memory device of claim 1 , wherein the first metal pad and the second metal pad are bonded to each other.
10. A memory device, comprising:
a memory cell region including a first metal pad;
a peripheral circuit region including a second metal pad and being vertically connected to the memory cell region by the first metal pad and the second metal pad;
a memory cell array provided in the memory cell region and including a plurality of cell strings including:
a plurality of memory cells;
a plurality of word lines respectively connected to the plurality of memory cells;
a plurality of bit lines connected to one side of the plurality of cell strings;
one or more common source lines connected to another side of the plurality of cell strings; and
a ground selection line connected to the plurality of cell strings;
a control logic provided in the peripheral circuit region and including a precharge control circuit configured to control precharge on partial cell strings among the plurality of cell strings and control a plurality of data program steps on the plurality of memory cells;
a row decoder provided in the peripheral circuit region and configured to activate at least some of the plurality of word lines based on a control of the control logic; and
a common source line driver configured to activate the one or more common source lines based on the control of the control logic,
wherein during the precharge of the partial cell strings, the row decoder applies a turn-on voltage to a selection word line and a word line adjacent to the selection word line, among the plurality of word lines, and a voltage at a level lower than that of the turn-on voltage is applied to another word line among the plurality of word lines, and
wherein during the precharge of the partial cell strings, the common source line driver applies a precharge voltage to the one or more common source lines.
11. The memory device of claim 10 , wherein the plurality of data program steps comprise:
a first program operation; and
a second program operation, the first and second program operations sequentially forming threshold voltage distributions for the plurality of memory cells, and
wherein during the second program operation, the row decoder applies the turn-on voltage to the selection word line and the word line adjacent to the selection word line.
12. The memory device of claim 11 , wherein, a first level of the turn-on voltage during the precharge for the first program operation is lower than a second level of the turn-on voltage during the precharge for the second program operation.
13. The memory device of claim 10 , further comprising:
a page buffer provided in the peripheral circuit region for activating at least some of the plurality of bit lines based on the control of the control logic,
wherein the page buffer applies a precharge voltage to partial bit lines, among the plurality of bit lines, during the precharge of the partial cell strings, and
wherein a word line adjacent to the selection word line includes a word line arranged on the selection word line.
14. The memory device of claim 10 , further comprising:
a page buffer provided in the peripheral circuit region for activating at least some of the plurality of bit lines based on the control of the control logic,
wherein the page buffer applies a precharge voltage to partial bit lines, among the plurality of bit lines, during a period after the precharge of the partial cell strings.
15. The memory device of claim 10 , the memory cell array further comprising:
a plurality of dummy word lines respectively connected to the plurality of memory cells, wherein during the precharge of the partial cell strings, a level of voltage applied to the dummy word lines is lower than a level of the turn-on voltage.
16. A memory device, comprising:
a memory cell region including a first metal pad;
a peripheral circuit region including a second metal pad and being vertically connected to the memory cell region by the first metal pad and the second metal pad;
a memory cell array provided in the memory cell region and including a plurality of cell strings including:
a plurality of memory cells;
a plurality of word lines respectively connected to the plurality of memory cells;
a plurality of bit lines connected to one side of the plurality of cell strings;
one or more common source lines connected to another side of the plurality of cell strings; and
a ground selection line connected to the plurality of cell strings;
a control logic provided in the peripheral circuit region and including a precharge control circuit configured to control precharge on partial cell strings among the plurality of cell strings and control a first program operation and a second program operation on the plurality of memory cells;
a row decoder provided in the peripheral circuit region and configured to activate at least some of the plurality of word lines based on a control of the control logic; and
a common source line driver configured to activate the one or more common source lines based on the control of the control logic,
wherein during the precharge of the partial cell strings, the row decoder applies a turn-on voltage to a selection word line and a word line adjacent to the selection word line, among the plurality of word lines, and a voltage at a level lower than that of the turn-on voltage is applied to another word line among the plurality of word lines, and
wherein during the precharge of the partial cell strings, the common source line driver applies a precharge voltage to the one or more common source lines.
17. The memory device of claim 16 , wherein, a first level of the turn-on voltage during the precharge for the first program operation is lower than a second level of the turn-on voltage during the precharge for the second program operation.
18. The memory device of claim 16 , further comprising:
a page buffer provided in the peripheral circuit region for activating at least some of the plurality of bit lines based on the control of the control logic,
wherein the page buffer applies a precharge voltage to partial bit lines, among the plurality of bit lines, during the precharge of the partial cell strings, and
wherein a word line adjacent to the selection word line includes a word line arranged on the selection word line.
19. The memory device of claim 16 , further comprising:
a page buffer provided in the peripheral circuit region for activating at least some of the plurality of bit lines based on the control of the control logic,
wherein the page buffer applies a precharge voltage to partial bit lines, among the plurality of bit lines, during a period after the precharge of the partial cell strings.
20. The memory device of claim 16 , the memory cell array further comprising:
a plurality of dummy word lines respectively connected to the plurality of memory cells, wherein during the precharge of the partial cell strings, a level of voltage applied to the dummy word lines is lower than a level of the turn-on voltage.