Capacitor and airgap structure
The present disclosure relates to semiconductor structures and, more particularly, to capacitor structures and methods of manufacture. The structure includes: an airgap provided within a dielectric material; an insulator material across a top of the airgap and on a surface of the dielectric material; and a capacitor provided within the dielectric material and lined with the insulator material.
1. A structure comprising:
an airgap provided within a dielectric material;
an insulator material across a top of the airgap and on a surface of the dielectric material;
a capacitor provided within the dielectric material and lined with the insulator material; and
a U-shaped insulator material over a top plate of the capacitor, and a contact extending within the U-shaped insulator material to contact the top plate of the capacitor.
2. The structure of claim 1 , wherein the insulator material lines sidewalls of the airgap.
3. The structure of claim 1 , wherein the insulator material is over a liner material which is on the dielectric material.
4. The structure of claim 3 , wherein the capacitor extends through the liner material.
5. The structure of claim 3 , wherein a top surface of the capacitor is devoid of the liner material.
6. The structure of claim 3 , wherein the capacitor includes a bottom plate, a top plate and an insulator material between the top plate and the bottom plate, the bottom plate having a height extending above a surface of the liner material.
7. A structure comprising:
an airgap provided within a dielectric material;
an insulator material across a top of the airgap and on a surface of the dielectric material; and
a capacitor provided within the dielectric material and lined with the insulator material, wherein the capacitor comprises a bottom plate, a top plate and an insulator material between the top plate and the bottom plate, each of which are aligned with a trench in the dielectric material and which do not extend laterally over an upper surface of the insulator material.
8. The structure of claim 7 , further comprising a wiring structure within the dielectric material and a liner material over the wiring structure and under the insulator material.
9. The structure of claim 8 , wherein the bottom plate of the capacitor does not extend below the wiring structure.
10. The structure of claim 8 , wherein the bottom plate of the capacitor has a height that exceeds a combination of the wiring structure and the liner material.
11. The structure of claim 8 , wherein the bottom plate and the top plate of the capacitor do not extend laterally over the liner material.
12. A structure comprising:
an airgap structure within a dielectric material;
a wiring structure within the dielectric material;
a liner over the dielectric material and wiring structure; and
a capacitor within the dielectric material, the capacitor having a height greater than a combined height of the wiring structure and the liner; and
insulator material that lines and extends over the airgap structure.
13. The structure of claim 12 , wherein the insulator material is under the capacitor and extends onto a surface of the liner.
14. The structure of claim 12 , wherein the capacitor comprises a bottom plate, an insulator layer and a top plate, each of which has a surface planar with the insulator material.
15. The structure of claim 14 , wherein the capacitor has a height greater than a combined height of the wiring structure and the liner.
16. The structure of claim 12 , wherein a top surface of the capacitor is devoid of the liner.
17. The structure of claim 12 , wherein a bottom plate of the capacitor is at or above a bottom surface of the wiring structure.