Bidirectional electrostatic discharge protection device
View Patent ↗Disclosed are bidirectional ESD protection devices capable of solving a breakdown voltage mismatch (BV mismatch) phenomenon while securing operation stability by providing a high breakdown voltage. The bidirectional ESD protection device includes an isolation region between an anode region and a cathode region, and the anode region and the cathode region may face each other with the isolation region in between. Accordingly, the bidirectional ESD protection device realizes high-voltage bidirectional characteristics without adding a mask, is minimized or reduced in size, and solves problems such as a breakdown voltage mismatch and instability.
1. A bidirectional ESD protection device, comprising:
a P-type epitaxial layer;
an N-type buried layer in the epitaxial layer;
a P well at or adjacent to an upper surface of the epitaxial layer,
a plurality of N wells at or adjacent to the upper surface of the epitaxial layer and spaced apart from each other;
a plurality of connection N wells connected to the buried layer, in the epitaxial layer,
a plurality of isolation P wells at or adjacent to the upper surface of the epitaxial layer and respectively between adjacent ones of the plurality of N wells; and
an anode region, a cathode region, and an isolation region between the anode region and the cathode region,
wherein the isolation region comprises two adjacent ones of the plurality of N wells and the isolation P well between the two adjacent ones of the plurality of N wells, and
the anode region and the cathode region comprise remaining ones of the plurality of N wells and remaining ones of the plurality of isolation P wells.
2. The bidirectional ESD protection device of claim 1 , wherein the plurality of N wells comprise:
a first N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the P well;
a second N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the first N well;
a third N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the second N well;
a fourth N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the third N well;
a fifth N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the fourth N well; and
a sixth N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the fifth N well.
3. The bidirectional ESD protection device of claim 2 , further comprising
a plurality of doped layers under the N wells, respectively, in the epitaxial layer,
wherein the plurality of doped layers comprise:
a first doped layer at least partially surrounding the first N well, in the epitaxial layer,
a second doped layer at least partially surrounding the second N well, in the epitaxial layer;
a third doped layer at least partially surrounding the third N well, in the epitaxial layer,
a fourth doped layer at least partially surrounding the fourth N well, in the epitaxial layer,
a fifth doped layer at least partially surrounding the fifth N well, in the epitaxial layer, and
a sixth doped layer at least partially surrounding the sixth N well, in the epitaxial layer.
4. The bidirectional ESD protection device of claim 3 , wherein the plurality of connection N wells comprise:
a first connection N well connecting the first doped layer with the buried layer, in the epitaxial layer;
a second connection N well connecting the second doped layer with the buried layer, in the epitaxial layer;
a third connection N well connecting the third doped layer with the buried layer, in the epitaxial layer;
a fourth connection N well connecting the fourth doped layer with the buried layer, in the epitaxial layer;
a fifth connection N well connecting the fifth doped layer with the buried layer, in the epitaxial layer; and
a sixth connection N well connecting the sixth doped layer with the buried layer, in the epitaxial layer.
5. The bidirectional ESD protection device of claim 2 , wherein the plurality of isolation P wells comprise:
a first isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the first N well and the second N well;
a second isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the second N well and the third N well;
a third isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the third N well and the fourth N well;
a fourth isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the fourth N well and the fifth N well; and
a fifth isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the fifth N well and the sixth N well.
6. The bidirectional ESD protection device of claim 5 , further comprising
a plurality of isolation deep wells connected to lower portions of the isolation P wells, respectively, in the epitaxial layer,
wherein the plurality of isolation deep wells comprise:
a first isolation deep well connected to the first isolation P well, in the epitaxial layer;
a second isolation deep well connected to the second isolation P well, in the epitaxial layer,
a third isolation deep well connected to the third isolation P well, in the epitaxial layer;
a fourth isolation deep well connected to the fourth isolation P well, in the epitaxial layer, and
a fifth isolation deep well connected to the fifth isolation P well, in the epitaxial layer.
7. The bidirectional ESD protection device of claim 5 , wherein the isolation region comprises the third N well, the fourth N well, and the third isolation P well, and
the anode region comprises the first N well, the second N well, the first isolation P well, and the second isolation P well on one side of the isolation region, and the cathode region comprises the fifth N well, the sixth N well, the fourth isolation P well, and the fifth isolation P well on an opposite side of the isolation region.
8. A bidirectional ESD protection device, comprising:
a P-type epitaxial layer;
an N-type buried layer in the epitaxial layer;
a P well at or adjacent to an upper surface of the epitaxial layer,
a plurality of N wells at or adjacent to the upper surface of the epitaxial layer and spaced apart from each other;
a plurality of connection N wells connected to the buried layer, in the epitaxial layer, and
a plurality of isolation P wells at or adjacent to the upper surface of the epitaxial layer and respectively between adjacent ones of the plurality of N wells; and
an anode region, a cathode region, and an isolation region between the anode region and the cathode region,
wherein the isolation region comprises two adjacent ones of the plurality of N wells and the isolation P well between the two adjacent ones of the two N wells, and
the anode region and the cathode region face each other with the isolation region in a center, and the anode region and the cathode region are on opposite sides of the isolation region.
9. The bidirectional ESD protection device of claim 8 , wherein the plurality of N wells comprise:
a first N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the P well;
a second N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the first N well;
a third N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the second N well;
a fourth N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the third N well;
a fifth N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the fourth N well; and
a sixth N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the fifth N well.
10. The bidirectional ESD protection device of claim 9 , further comprising
a plurality of doped layers under the N wells, respectively, in the epitaxial layer,
wherein the plurality of doped layers comprise:
a first doped layer at least partially surrounding the first N well, in the epitaxial layer,
a second doped layer at least partially surrounding the second N well, in the epitaxial layer;
a third doped layer at least partially surrounding the third N well, in the epitaxial layer,
a fourth doped layer at least partially surrounding the fourth N well, in the epitaxial layer,
a fifth doped layer at least partially surrounding the fifth N well, in the epitaxial layer, and
a sixth doped layer at least partially surrounding the sixth N well, in the epitaxial layer.
11. The bidirectional ESD protection device of claim 10 , wherein the plurality of connection N wells comprise:
a first connection N well under the first doped layer connecting the first doped layer with the buried layer, in the epitaxial layer;
a second connection N well under the third doped layer connecting the third doped layer with the buried layer, in the epitaxial layer;
a third connection N well under the fourth doped layer connecting the fourth doped layer with the buried layer, in the epitaxial layer; and
a fourth connection N well under the sixth doped layer connecting the sixth doped layer with the buried layer, in the epitaxial layer.
12. The bidirectional ESD protection device of claim 9 , wherein the plurality of isolation P wells comprise:
a first isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the first N well and the second N well;
a second isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the second N well and the third N well;
a third isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the third N well and the fourth N well;
a fourth isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the fourth N well and the fifth N well; and
a fifth isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the fifth N well and the sixth N well.
13. The bidirectional ESD protection device of claim 12 , further comprising
a plurality of isolation deep wells connected to lower portions of the isolation P wells, respectively, in the epitaxial layer,
wherein the plurality of isolation deep wells comprises:
a first isolation deep well connected to the first isolation P well, in the epitaxial layer;
a second isolation deep well connected to the second isolation P well, in the epitaxial layer,
a third isolation deep well connected to the third isolation P well, in the epitaxial layer;
a fourth isolation deep well connected to the fourth isolation P well, in the epitaxial layer, and
a fifth isolation deep well connected to the fifth isolation P well, in the epitaxial layer.
14. The bidirectional ESD protection device of claim 12 , wherein the isolation region comprises the third N well, the fourth N well, and the third isolation P well,
the anode region comprises the first N well, the second N well, the first isolation P well, and the second isolation P well,
the cathode region comprises the fifth N well, the sixth N well, the fourth isolation P well, and the fifth isolation P well,
the anode region and the cathode region are on opposite sides of the isolation region, and
the first N well, the second N well, the first isolation P well, and the second isolation P well face the fifth N well, the sixth N well, the fourth isolation P well, and the fifth isolation P well, with the isolation region in the center.
15. A bidirectional ESD protection device, comprising:
a P-type epitaxial layer;
an N-type buried layer in the epitaxial layer;
a P well at or adjacent to an upper surface of the epitaxial layer,
a plurality of N wells at or adjacent to the upper surface of the epitaxial layer and spaced apart from each other;
a plurality of connection N wells connected to the buried layer, in the epitaxial layer, and
a plurality of isolation P wells at or adjacent to the upper surface of the epitaxial layer and respectively between each of the plurality of N wells; and
an anode region, a cathode region, and an isolation region between the anode region and the cathode region,
wherein the isolation region comprises one of the plurality of N wells, and
the anode region and the cathode region comprise remaining ones of the plurality of N wells and the plurality of isolation P wells,
the remaining ones of the plurality of N wells and the plurality of isolation P wells face each other with the isolation region in a center, and the anode region and the cathode region are on opposite sides of the isolation region.
16. The bidirectional ESD protection device of claim 15 , wherein the plurality of N wells comprise:
a first N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the P well;
a second N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the first N well;
a third N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the second N well;
a fourth N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the third N well; and
a fifth N well at or adjacent to the upper surface of the epitaxial layer and spaced apart from the fourth N well, and
the plurality of isolation P wells comprise:
a first isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the first N well and the second N well;
a second isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the second N well and the third N well;
a third isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the third N well and the fourth N well; and
a fourth isolation P well at or adjacent to the upper surface of the epitaxial layer, and between the fourth N well and the fifth N well.
17. The bidirectional ESD protection device of claim 16 , further comprising
a plurality of doped layers comprising:
a first doped layer at least partially surrounding the first N well, in the epitaxial layer;
a second doped layer at least partially surrounding the second N well, in the epitaxial layer,
a third doped layer at least partially surrounding the third N well, in the epitaxial layer,
a fourth doped layer at least partially surrounding the fourth N well, in the epitaxial layer, and
a fifth doped layer at least partially surrounding the fifth N well, in the epitaxial layer.
18. The bidirectional ESD protection device of claim 17 , wherein the plurality of connection N wells comprise:
a first connection N well connecting the first doped layer with the buried layer, in the epitaxial layer;
a second connection N well connecting the third doped layer with the buried layer, in the epitaxial layer; and
a third connection N well connecting the fifth doped layer with the buried layer, in the epitaxial layer.
19. The bidirectional ESD protection device of claim 16 , further comprising
a plurality of isolation deep wells connected to lower portions of the isolation P wells, respectively, in the epitaxial layer,
wherein the plurality of isolation deep wells comprise:
a first isolation deep well connected to the first isolation P well under the first isolation P well, in the epitaxial layer,
a second isolation deep well connected to the second isolation P well under the second isolation P well, in the epitaxial layer,
a third isolation deep well connected to the third isolation P well under the third isolation P well, in the epitaxial layer, and
a fourth isolation deep well connected to the fourth isolation P well under the fourth isolation P well, in the epitaxial layer.
20. The bidirectional ESD protection device of claim 16 , wherein the isolation region comprises the third N well,
the anode region comprises the first N well, the second N well, the first isolation P well, and the second isolation P well,
the cathode region comprises the fourth N well, the fifth N well, the third isolation P well, and the fourth isolation P well, and
the first N well, the second N well, the first isolation P well, and the second isolation P well face the fourth N well, the fifth N well, the third isolation P well, and the fourth isolation P well, with the isolation region in the center.