Solid-state imaging device and electronic apparatus
The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes: a substrate; a first photoelectric conversion region that is provided in the substrate; a second photoelectric conversion region that is provided in the substrate; a trench that is provided between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate; a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion region; and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.
1. A light detecting device, comprising:
a substrate, wherein the substrate includes:
a light receiving surface side configured to receive incident light; and
a back surface side opposite to the light receiving surface;
a wiring layer on the back surface side of the substrate;
a first photoelectric conversion region in the substrate;
a second photoelectric conversion region in the substrate, wherein the second photoelectric conversion region is adjacent to the first photoelectric conversion region in a cross-sectional view;
a trench between the first photoelectric conversion region and the second photoelectric conversion region, wherein the trench penetrates through the substrate to reach the wiring layer on the back surface side of the substrate;
a material disposed in the trench;
a first concave portion region that has a plurality of first concave portions on the light receiving surface side of the substrate, wherein the first concave portion region is above the first photoelectric conversion region;
a second concave portion region that has a plurality of second concave portions on the light receiving surface side of the substrate, wherein the second concave portion region is above the second photoelectric conversion region; and
a film including hafnium on the first concave portion region, the second concave portion region, and the material, wherein the film is undisposed in the trench.
2. The light detecting device according to claim 1 , wherein the material disposed in the trench is an insulating film.
3. The light detecting device according to claim 2 , wherein the film is stacked between the substrate and the insulating film.
4. The light detecting device according to claim 2 , wherein an antireflection film is stacked between the substrate and the insulating film.
5. The light detecting device according to claim 1 , wherein the material disposed in the trench is a metal.
6. The light detecting device according to claim 1 , wherein
the first concave portion region is at a central portion of a first pixel, and
the central portion of the first pixel is a region of a specific ratio to a first pixel region.
7. The light detecting device according to claim 1 , wherein
the first concave portion region is at a central portion of a first pixel, and
the central portion of the first pixel is a region of 80% of a first pixel region.
8. The light detecting device according to claim 1 , wherein a flat portion of a specific width, in which each of the first concave portion region and the second concave portion region is not formed, is between pixels on the light receiving surface side.
9. An electronic apparatus, comprising:
a light detecting device including:
a substrate, wherein the substrate includes:
a light receiving surface side configured to receive incident light; and
a back surface side opposite to the light receiving surface;
a wiring layer on the back surface side of the substrate;
a first photoelectric conversion region in the substrate;
a second photoelectric conversion region in the substrate, wherein the second photoelectric conversion region is adjacent to the first photoelectric conversion region in a cross-sectional view;
a trench between the first photoelectric conversion region and the second photoelectric conversion region, wherein the trench penetrates through the substrate to reach the wiring layer on the back surface side of the substrate;
a material disposed in the trench;
a first concave portion region that has a plurality of first concave portions on the light receiving surface side of the substrate, wherein the first concave portion region is above the first photoelectric conversion region;
a second concave portion region that has a plurality of second concave portions on the light receiving surface side of the substrate, wherein the second concave portion region is above the second photoelectric conversion region; and
a film including hafnium on the first concave portion region, the second concave portion region, and the material, wherein the film is undisposed in the trench.