IP Library › Granted Patent US 12,393,064
Granted Patent B2
US 12,393,064 · App. 18/006,835 · Granted Aug 19, 2025

Semiconductor optical modulator

Inventors: Josuke Ozaki (Musashino, JP); Yoshihiro Ogiso (Musashino, JP)
Assignee: Nippon Telegraph and Telephone Corporation
G02F1/025G02F1/212G02F1/2257
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Quick Facts
Patent No.
US 12,393,064
App. No.
18/006,835
Granted
Aug 19, 2025
Kind
B2
Abstract

A semiconductor optical modulator in which a radio frequency (RF) line which is disposed parallel to an optical waveguide and is a differential configuration for transmitting an RF modulation signal, a connecting pad which is formed in the same direction continuously with the RF line, and a termination resistor which has two rectangular resistors for differentially terminating the RF modulation signal from the connecting pad are linearly disposed, and terminated on-chip, and the RF line which forms a differential pair immediately after passing through the termination resistor is short-circuited.

Claims (41)

1. A semiconductor optical modulator comprising:

a radio frequency (RF) line which is disposed parallel to an optical waveguide and is a differential configuration for transmitting an RF modulation signal,

a connecting pad which is formed in the same direction continuously with the RF line, and

a termination resistor which has two rectangular resistors for differentially terminating the RF modulation signal from the connecting pad, wherein

the RF line, the connecting pad, and the termination resistor are linearly disposed, and the RF line is terminated on-chip, and

an opposite side of the connecting pad of the termination resistor is short-circuited,

wherein

the connecting pad and the termination resistor are formed on at least one or more n-type or p-type semiconductors and at least one or more non-doped semiconductor layers,

the optical waveguide is formed in an independent high-mesa structure,

the semiconductor optical modulator has a higher-order mode light emitting structure for emitting higher-order mode light of a multimode interference coupler of a Mach-Zehnder interference system configured in a high-mesa structure, and

the resistor is disposed on the higher-order mode light emitting structure.

2. The semiconductor optical modulator according to claim 1 , wherein

at least a part of the connecting pad and the whole of the resistor of the termination resistor are formed on at least one or more n-type or p-type semiconductor layers sequentially formed on an insulating semiconductor substrate, and at least one or more dielectric layers formed on the semiconductor layer.

3. The semiconductor optical modulator according to claim 2 , wherein

the semiconductor layer under the resistor has a width larger than that of the resistor by at least 5 μm or more, and

the resistor is disposed at a position separated by 10 μm or more from the optical waveguide.

4. The semiconductor optical modulator according to claim 1 , wherein

the optical waveguide is formed in an isolated mesa structure and connected to a multimode interference coupler, and the multimode interference coupler is a multimode interference coupler for combined waves having a high-order mode light emitting structure, and

the resistor of the termination resistor is disposed on the higher-order mode light emitting structure.

5. The semiconductor optical modulator according to claim 4 , wherein

the higher-order mode light emitting structure has a shape of an arrow blade.

6. The semiconductor optical modulator according to claim 1 , wherein

the semiconductor optical modulator has a heater-type phase controller, the heater-type phase controller is constituted by the same resistor as the resistor forming the termination resistor, and an upper surface of the resistor is covered with a dielectric.

7. The semiconductor optical modulator according to claim 1 , wherein

a length of the resistor in the propagation direction is equal to or less than ¼ of the wavelength in the substrate of an operating frequency, a length of the resistor in the propagation direction is equal to or less than 200 μm, and a width of the resistor is equal to or more than 5 μm.

8. A semiconductor optical modulator comprising:

a radio frequency (RF) line which is disposed parallel to an optical waveguide and is a differential configuration for transmitting an RF modulation signal,

a connecting pad which is formed in the same direction continuously with the RF line, and

a termination resistor which has two rectangular resistors for differentially terminating the RF modulation signal from the connecting pad, wherein

the RF line, the connecting pad, and the termination resistor are linearly disposed, and the RF line is terminated on-chip, and

an opposite side of the connecting pad of the termination resistor is short-circuited, wherein

the RF line being the differential configuration for transmitting the RF modulation signal of the semiconductor optical modulator is connected with an open collector-type or open drain-type driver IC via a flip mounting using a bump, a wire, or a circuit board, and

a voltage for driving the driver IC is applied to a middle point which is short-circuited after being terminated by the resistor of the semiconductor optical modulator.

9. A semiconductor optical modulator comprising:

a radio frequency (RF) line which is disposed parallel to an optical waveguide and is a differential configuration for transmitting an RF modulation signal,

a connecting pad which is formed in the same direction continuously with the RF line, and

a termination resistor which has two rectangular resistors for differentially terminating the RF modulation signal from the connecting pad, wherein

the RF line, the connecting pad, and the termination resistor are linearly disposed, and the RF line is terminated on-chip, and

an opposite side of the connecting pad of the termination resistor is short-circuited, wherein

at least two or more of the semiconductor optical modulators are disposed parallel to each other to form at least one IQ optical modulator, and

all of the wirings for applying a voltage for driving a driver IC are arranged in one.

Assignments (2)
CHANGE OF NAME Recorded Aug 18, 2025
From: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
To: NTT, INC.
Reel/Frame 072507/0679 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2023
From: OZAKI, JOSUKE; OGISO, YOSHIHIRO
To: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
Reel/Frame 062487/0320 →
Continuity (1)
Related Publication 20230273467A1 · Aug 31, 2023
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