IP Library › Granted Patent US 12,395,161
Granted Patent B2
US 12,395,161 · App. 18/507,867 · Granted Aug 19, 2025

Flip-flop based on clock signal and pulse signal

Inventors: Hyunchul Hwang (Suwon-si, KR); Jeongjin Lee (Suwon-si, KR); Seungman Lim (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H03K3/356121G01R31/318541H03K3/012H03K3/037
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Quick Facts
Patent No.
US 12,395,161
App. No.
18/507,867
Granted
Aug 19, 2025
Kind
B2
Abstract

A flip-flop (FF) includes a first n-channel metal oxide semiconductor (NMOS) transistor connected to a ground line, a first p-channel metal oxide semiconductor (PMOS) transistor connected to a power voltage line, a second NMOS transistor connecting a first node to the first NMOS transistor, a second PMOS transistor connecting the first node to the first PMOS transistor, a third NMOS transistor and a fourth NMOS transistor, connected to the second NMOS transistor in parallel, and forming a first discharge path for connecting the first node to the ground line, a third PMOS transistor and a fourth PMOS transistor, connected to the second PMOS transistor in parallel, and forming a first charge path for connecting the first node to the power voltage line, a keeper circuit connected to the first node to maintain a voltage level of the first node.

Claims (57)

1. A flip-flop (FF) comprising:

a first n-channel metal oxide semiconductor (NMOS) transistor connected to a ground line and operating based on an input signal;

a first p-channel metal oxide semiconductor (PMOS) transistor connected to a power voltage line and operating based on the input signal;

a second NMOS transistor connecting a first node to the first NMOS transistor and operating based on a pulse signal;

a second PMOS transistor connecting the first node to the first PMOS transistor and operating based on an inverted pulse signal inverted with respect to the pulse signal;

a third NMOS transistor and a fourth NMOS transistor, connected to the second NMOS transistor in parallel, and forming a first discharge path for connecting the first node to the ground line, based at least on a clock signal;

a third PMOS transistor and a fourth PMOS transistor, connected to the second PMOS transistor in parallel, and forming a first charge path for connecting the first node to the power voltage line, based at least on an inverted clock signal inverted with respect to the clock signal;

a keeper circuit connected to the first node to maintain a voltage level of the first node; and

an inverter generating an output signal by inverting a signal at the first node.

2. The FF of claim 1 , wherein the third NMOS transistor connects the first node to the fourth NMOS transistor and operates based on the clock signal, and

wherein the fourth NMOS transistor connects the first NMOS transistor to the third NMOS transistor and operates based on a signal having the same logic level as the clock signal and delayed as compared to the clock signal.

3. The FF of claim 2 , wherein the clock signal and the signal delayed as compared to the clock signal are each generated before the pulse signal.

4. The FF of claim 3 , wherein, when the input signal is logic high, before the second NMOS transistor is turned on to form a second discharge path in response to transition of the pulse signal to logic high, the third NMOS transistor and the fourth NMOS transistor are turned on to form an electrical connection from the first node to the ground line and to lower the voltage level of the first node.

5. The FF of claim 4 , wherein the second discharge path corresponds to an electrical path from the first node to the second NMOS transistor and the first NMOS transistor, and

wherein, when the input signal is logic high, the first discharge path corresponds to an electrical path from the first node to the third NMOS transistor, the fourth NMOS transistor, and the first NMOS transistor.

6. The FF of claim 1 , wherein the third PMOS transistor connects the first node to the fourth PMOS transistor and operates based on the inverted clock signal, and

wherein the fourth PMOS transistor connects the first PMOS transistor to the third PMOS transistor and operates based on a signal having the same logic level as the inverted clock signal and delayed as compared to the inverted clock signal.

7. The FF of claim 6 , wherein the inverted clock signal and the signal delayed as compared to the inverted clock signal are each generated before the inverted pulse signal.

8. The FF of claim 7 , wherein, when the input signal is logic low, before the second PMOS transistor is turned on to form a second charge path in response to transition of the inverted pulse signal to logic low, the third PMOS transistor and the fourth PMOS transistor are turned on to form an electrical connection from the first node to the power voltage line and to increase the voltage level of the first node.

9. The FF of claim 8 , wherein the second charge path corresponds to an electrical path from the first node to the second PMOS transistor and the first PMOS transistor, and

wherein, when the input signal is logic low, the first charge path corresponds to an electrical path from the first node to the third PMOS transistor, the fourth PMOS transistor, and the first PMOS transistor.

10. A flip-flop (FF) comprising:

a first n-channel metal oxide semiconductor (NMOS) transistor connected to a ground line and operating based on an input signal;

a first p-channel metal oxide semiconductor (PMOS) transistor connected to a power voltage line and operating based on the input signal;

a second NMOS transistor connecting a first node to the first NMOS transistor and operating based on a pulse signal;

a second PMOS transistor connecting the first node to the first PMOS transistor and operating based on an inverted pulse signal inverted with respect to the pulse signal;

a third NMOS transistor and a fourth NMOS transistor, connected to the second NMOS transistor in parallel, and forming a first discharge path for connecting the first node to the ground line, based at least on a clock signal;

a keeper circuit connected to the first node to maintain a voltage level of the first node; and

an inverter generating an output signal by inverting a signal at the first node.

11. The FF of claim 10 , wherein the third NMOS transistor connects the first node to the fourth NMOS transistor and operates based on the clock signal, and

wherein the fourth NMOS transistor connects the first NMOS transistor to the third NMOS transistor and operates based on a signal having the same logic level as the clock signal and delayed as compared to the clock signal.

12. The FF of claim 11 , wherein the clock signal and the signal delayed as compared to the clock signal are each generated before the pulse signal.

13. The FF of claim 12 , wherein, when the input signal is logic high, before the second NMOS transistor is turned on to form a second discharge path in response to transition of the pulse signal to logic high, the third NMOS transistor and the fourth NMOS transistor are turned on to form an electrical connection from the first node to the ground line and to lower the voltage level of the first node.

14. The FF of claim 13 , wherein the second discharge path corresponds to an electrical path from the first node to the second NMOS transistor and the first NMOS transistor, and

wherein, when the input signal is logic high, the first discharge path corresponds to an electrical path from the first node to the third NMOS transistor, the fourth NMOS transistor, and the first NMOS transistor.

15. A flip-flop (FF) comprising:

a scan multiplexer selectively outputting either an input signal or a scan signal;

a first n-channel metal oxide semiconductor (NMOS) transistor connected to a ground line and operating based on an output signal of the scan multiplexer;

a first p-channel metal oxide semiconductor (PMOS) transistor connected to a power voltage line and operating based on the output signal of the scan multiplexer;

a second NMOS transistor connecting a first node to the first NMOS transistor and operating based on a pulse signal;

a second PMOS transistor connecting the first node to the first PMOS transistor and operating based on an inverted pulse signal inverted with respect to the pulse signal;

a third NMOS transistor and a fourth NMOS transistor connected to the second NMOS transistor in parallel, and forming a first discharge path for connecting the first node to the ground line, based at least on a clock signal;

a third PMOS transistor and a fourth PMOS transistor connected to the second PMOS transistor in parallel, and forming a first charge path for connecting the first node to the power voltage line, based at least on an inverted clock signal inverted with respect to the clock signal;

a keeper circuit connected to the first node to maintain a voltage level of the first node; and

an inverter generating an output signal by inverting a signal at the first node.

16. The FF of claim 15 , wherein the third NMOS transistor connects the first node to the fourth NMOS transistor and operates based on the clock signal, and

wherein the fourth NMOS transistor connects the first NMOS transistor to the third NMOS transistor and operates based on a signal having the same logic level as the clock signal and delayed as compared to the clock signal.

17. The FF of claim 16 , wherein each of the clock signal and the signal delayed as compared to the clock signal is generated before the pulse signal, and

wherein, when the output signal of the scan multiplexer is logic high, before the second NMOS transistor is turned on to form a second discharge path in response to transition of the pulse signal to logic high, the third NMOS transistor and the fourth NMOS transistor are turned on to form an electrical connection from the first node to the ground line and to lower the voltage level of the first node.

18. The FF of claim 17 , wherein the second discharge path corresponds to an electrical path from the first node to the second NMOS transistor and the first NMOS transistor, and

wherein, when the output signal of the scan multiplexer is logic high, the first discharge path corresponds to an electrical path from the first node to the third NMOS transistor, the fourth NMOS transistor, and the first NMOS transistor.

19. The FF of claim 15 , wherein the third PMOS transistor connects the first node to the fourth PMOS transistor and operates based on the inverted clock signal, and

wherein the fourth PMOS transistor connects the first PMOS transistor to the third PMOS transistor and operates based on a signal having the same logic level as the inverted clock signal and delayed as compared to the inverted clock signal.

20. The FF of claim 19 , wherein the inverted clock signal and the signal delayed as compared the inverted clock signal are each generated before the inverted pulse signal,

wherein, when the output signal of the scan multiplexer is logic low, before the second PMOS transistor is turned on to form a second charge path in response to transition of the inverted pulse signal to logic low, the third PMOS transistor and the fourth PMOS transistor are turned on to form an electrical connection from the first node to the power voltage line and to increase the voltage level of the first node,

wherein the second charge path corresponds to an electrical path from the first node to the second PMOS transistor and the first PMOS transistor, and

wherein, when the output signal of the scan multiplexer is logic low, the first charge path corresponds to an electrical path from the first node to the third PMOS transistor, the fourth PMOS transistor, and the first PMOS transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 13, 2023
From: HWANG, HYUNCHUL; LEE, JEONGJIN; LIM, SEUNGMAN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 065545/0006 →
Priority Claims (2)
KR 10-2022-0152003 · Nov 14, 2022 · national
KR 10-2023-0055654 · Apr 27, 2023 · national
Continuity (1)
Related Publication 20240162893A1 · May 16, 2024
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