One-time programmable memory device
View Patent ↗An OTP memory cell is provided. The OTP memory cell includes: an antifuse transistor, wherein a gate terminal of the antifuse transistor is connected to a first word line having a first signal, and the antifuse transistor is selectable between a first state and a second state in response to the first signal; and a selection transistor connected between the antifuse transistor and a bit line, wherein a gate terminal of the selection transistor is connected to a second word line having a second signal, and the selection transistor is configured to provide access to the antifuse transistor in response to the second signal. A first terminal of the antifuse transistor is a vacancy terminal, and a second terminal of the antifuse transistor is connected to the selection transistor.
1. A one-time programmable (OTP) memory cell system, comprising:
a first antifuse transistor;
a first selection transistor connected between the first antifuse transistor and a bit line;
a second antifuse transistor; and
a second selection transistor connected between the second antifuse transistor and the bit line;
wherein:
a first terminal of the first antifuse transistor is a vacancy terminal, and a second terminal of the first antifuse transistor is connected to the first selection transistor, and
a first terminal of the second antifuse transistor is a floating terminal including a contact structure, and a second terminal of the second antifuse transistor is connected to the second selection transistor.
2. The OTP memory cell system of claim 1 , wherein the vacancy terminal is a terminal that does not have a source contact structure or a drain contact structure.
3. The OTP memory cell system of claim 1 , further comprising an active region, wherein there is no metal-over-diffusion (MD) strip disposed over the active region at the vacancy terminal.
4. The OTP memory cell system of claim 1 , wherein:
the first antifuse transistor is connected to a first word line; and
the second antifuse transistor is connected to a second word line.
5. The OTP memory cell system of claim 1 , wherein:
the first antifuse transistor is selectable between a first state and a second state;
the first selection transistor is configured to provide access to the first antifuse transistor;
the second antifuse transistor is selectable between the first state and the second state; and
the second selection transistor is configured to provide access to the second antifuse transistor.
6. The OTP memory cell system of claim 5 , wherein the first state is a low resistance state and the second state is a high resistance state.
7. The OTP memory cell system of claim 1 , wherein the first antifuse transistor, the first selection transistor, the second antifuse transistor, and the second selection transistor are any one of (i) metal oxide semiconductor (MOS) transistors, (ii) fin field-effect transistors (FinFETs), or (iii) a combination of (i) and (ii).
8. The OTP memory cell system of claim 1 , wherein the first antifuse transistor, the first selection transistor, the second antifuse transistor, and the second selection transistor are any one of (i) n-type, (ii) p-type, or (iii) a combination of (i) and (ii).
9. A one-time programmable (OTP) memory cell system, comprising:
a first antifuse transistor;
a first selection transistor connected between the first antifuse transistor and a bit line;
a second antifuse transistor; and
a second selection transistor connected between the second antifuse transistor and the bit line;
wherein:
a first terminal of the first antifuse transistor is a first floating terminal that does not have a source contact structure or a drain contact structure, and a second terminal of the first antifuse transistor is connected to the first selection transistor, and
a first terminal of the second antifuse transistor is a second floating terminal including a contact structure, and a second terminal of the second antifuse transistor is connected to the second selection transistor.
10. The OTP memory cell system of claim 9 , further comprising an active region, wherein there is no metal-over-diffusion (MD) strip disposed over the active region at the first floating terminal.
11. The OTP memory cell system of claim 9 , wherein:
the first antifuse transistor is connected to a first word line; and
the second antifuse transistor is connected to a second word line.
12. The OTP memory cell system of claim 9 , wherein:
the first antifuse transistor is selectable between a first state and a second state;
the first selection transistor is configured to provide access to the first antifuse transistor;
the second antifuse transistor is selectable between the first state and the second state; and
the second selection transistor is configured to provide access to the second antifuse transistor.
13. The OTP memory cell system of claim 12 , wherein the first state is a low resistance state and the second state is a high resistance state.
14. The OTP memory cell system of claim 9 , wherein the first antifuse transistor, the first selection transistor, the second antifuse transistor, and the second selection transistor are any one of (i) metal oxide semiconductor (MOS) transistors, (ii) fin field-effect transistors (FinFETs), or (iii) a combination of (i) and (ii).
15. The OTP memory cell system of claim 9 , wherein the first antifuse transistor, the first selection transistor, the second antifuse transistor, and the second selection transistor are any one of (i) n-type, (ii) p-type, or (iii) a combination of (i) and (ii).
16. A one-time programmable (OTP) memory cell system, comprising:
an active region;
a first antifuse transistor;
a first selection transistor connected between the first antifuse transistor and a bit line;
a second antifuse transistor; and
a second selection transistor connected between the second antifuse transistor and the bit line;
wherein:
a first terminal of the first antifuse transistor is a first floating terminal wherein there is no metal-over-diffusion (MD) strip disposed over the active region at the first floating terminal, and a second terminal of the first antifuse transistor is connected to the first selection transistor, and
a first terminal of the second antifuse transistor is a second floating terminal including a MD strip disposed over the active region at the second floating terminal, and a second terminal of the second antifuse transistor is connected to the second selection transistor.
17. The OTP memory cell system of claim 16 , wherein:
the first antifuse transistor is connected to a first word line; and
the second antifuse transistor is connected to a second word line.
18. The OTP memory cell system of claim 16 , wherein:
the first antifuse transistor is selectable between a first state and a second state;
the first selection transistor is configured to provide access to the first antifuse transistor;
the second antifuse transistor is selectable between the first state and the second state; and
the second selection transistor is configured to provide access to the second antifuse transistor.
19. The OTP memory cell system of claim 18 , wherein the first state is a low resistance state and the second state is a high resistance state.
20. The OTP memory cell system of claim 16 , wherein the first antifuse transistor, the first selection transistor, the second antifuse transistor, and the second selection transistor are any one of (i) metal oxide semiconductor (MOS) transistors, (ii) fin field-effect transistors (FinFETs), or (iii) a combination of (i) and (ii).