Light-emitting element and display device including the same
A light-emitting element and a display device including the same are provided. The light-emitting element comprising: a light-emitting element core including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a nitride insulating film surrounding a side face of the light-emitting element core, a first element insulating film surrounding an outer side face of the nitride insulating film, and a second element insulating film surrounding an outer side face of the first element insulating film, wherein a thickness of the nitride insulating film is smaller than each of a thickness of the first element insulating film and a thickness of the second element insulating film.
1. A light-emitting element comprising:
a light-emitting element core including:
a first semiconductor layer;
a second semiconductor layer disposed on the first semiconductor layer; and
a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer;
a nitride insulating film completely surrounding a side face of the light-emitting element core from an end view perspective of the light-emitting element core;
a first element insulating film completely surrounding an outer side face of the nitride insulating film from the end view perspective of the light-emitting element core; and
a second element insulating film completely surrounding an outer side face of the first element insulating film from the end view perspective of the light-emitting element core,
wherein a thickness of the nitride insulating film is smaller than each of a thickness of the first element insulating film and a thickness of the second element insulating film.
2. The light-emitting element of claim 1 , wherein an inner side face of the nitride insulating film contacts the side face of the light-emitting element core.
3. The light-emitting element of claim 2 , wherein the side face of the light-emitting element core includes at least one of a side face of the first semiconductor layer, a side face of the second semiconductor layer, and a side face of the light-emitting layer.
4. The light-emitting element of claim 1 , wherein a thickness of the nitride insulating film is in a range of about 1 nm to about 5 nm.
5. The light-emitting element of claim 1 , wherein a dielectric constant of the first element insulating film is greater than a dielectric constant of the second element insulating film.
6. The light-emitting element of claim 5 , wherein an etching rate of the second element insulating film is different from an etching rate of the first element insulating film.
7. The light-emitting element of claim 5 , wherein the first element insulating film has a dielectric constant of about 10 or greater and an energy gap of about 3 eV or higher.
8. The light-emitting element of claim 1 , wherein the nitride insulating film has a thickness equal to or smaller than a critical thickness.
9. The light-emitting element of claim 1 , wherein the nitride insulating film includes at least one of AlN and SiN x .
10. The light-emitting element of claim 9 , wherein the first element insulating film includes at least one of silicon oxide (SiO x ), aluminum oxide (Al x O y ), hafnium silicon oxide (HfSiO x ), scandium oxide (Sc x O y ), hafnium oxide (HfO x ), zirconium oxide (ZrO x ), strontium oxide (SrO), yttrium oxide (Y x O y ), tantalum oxide (Ta x O y ), barium oxide (BaO), tungsten oxide (WO x ), titanium oxide (TiO x ), and lanthanum oxide (La x O y ).
11. A light-emitting element comprising:
a light-emitting element core including:
a first semiconductor layer;
a light-emitting layer disposed on the first semiconductor layer; and
a second semiconductor layer disposed on the light-emitting layer;
a first element insulating film completely surrounding a side face of the light-emitting element core from an end view perspective of the light-emitting element core;
a second element insulating film completely surrounding an outer side face of the first element insulating film from the end view perspective of the light-emitting element core; and
a third element insulating film completely surrounding an outer side face of the second element insulating film from the end view perspective of the light-emitting element core, wherein
the first element insulating film has a thickness in a range of about 1 nm to about 5 nm,
a thickness of the second element insulating film is greater than a thickness of the first element insulating film, and
a thickness of the third element insulating film is greater than the thickness of the first element insulating film.
12. The light-emitting element of claim 11 , wherein the first element insulating film includes a nitride-based insulating material.
13. The light-emitting element of claim 11 , wherein
the first element insulating film contacts the side face of the light-emitting element core, and
the side face of the light-emitting element core includes at least one of a side face of the first semiconductor layer, a side face of the second semiconductor layer, and a side face of the light-emitting layer.
14. The light-emitting element of claim 11 , wherein a dielectric constant of the second element insulating film is greater than a dielectric constant of the third element insulating film.
15. A display device comprising:
a first electrode and a second electrode disposed on a substrate and spaced apart from each other; and
a light-emitting element disposed on the first electrode and the second electrode,
wherein
the light-emitting element includes:
a light-emitting element core including:
a first semiconductor layer;
a second semiconductor layer disposed on the first semiconductor layer; and
a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer;
a nitride insulating film completely surrounding a side face of the light-emitting element core from an end view perspective of the light-emitting element core;
a first element insulating film completely surrounding an outer side face of the nitride insulating film from the end view perspective of the light-emitting element core; and
a second element insulating film completely surrounding an outer side face of the first element insulating film from the end view perspective of the light-emitting element core, wherein
a thickness of the nitride insulating film is smaller than each of a thickness of the first element insulating film and a thickness of the second element insulating film.
16. The display device of claim 15 , wherein an inner side face of the nitride insulating film contacts the side face of the light-emitting element core.
17. The display device of claim 15 , wherein a thickness of the nitride insulating film is in a range of about 1 nm to about 5 nm.
18. The display device of claim 15 , wherein a dielectric constant of the first element insulating film is greater than a dielectric constant of the second element insulating film.
19. The display device of claim 15 , wherein the nitride insulating film has a thickness equal to or smaller than a critical thickness.
20. An electronic device comprising:
a first electrode and a second electrode disposed on a substrate and spaced apart from each other; and
a light-emitting element disposed on the first electrode and the second electrode, wherein
the light-emitting element includes:
a light-emitting element core including:
a first semiconductor layer;
a second semiconductor layer disposed on the first semiconductor layer; and
a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer;
a nitride insulating film completely surrounding a side face of the light-emitting element core from an end view perspective of the light-emitting element core;
a first element insulating film completely surrounding an outer side face of the nitride insulating film from the end view perspective of the light-emitting element core; and
a second element insulating film completely surrounding an outer side face of the first element insulating film from the end view perspective of the light-emitting element core,
wherein a thickness of the nitride insulating film is smaller than each of a thickness of the first element insulating film and a thickness of the second element insulating film.