IP Library › Granted Patent US 12,398,320
Granted Patent B1
US 12,398,320 · App. 19/077,098 · Granted Aug 26, 2025

Bizmuth oxyiodide quantum dots and method for making

Inventors: Babiker Y. Abdulkhair (Riyadh, SA); Faisal K. Algethami (Riyadh, SA); Mohamed R. Elamin (Riyadh, SA)
Assignee: IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY
C09K11/7428C01G29/00
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Quick Facts
Patent No.
US 12,398,320
App. No.
19/077,098
Granted
Aug 26, 2025
Kind
B1
Abstract

A method of producing bismuth oxyhalide quantum dots without heat. The method is a one-pot method that includes synthesizing bismuth oxyhalide quantum dots at room temperature. The method results in quantum dots preferably having bismuth and halide in a molar ratio of 1:1. Further, the bismuth oxyhalide quantum dots produced demonstrate excellent photocatalytic activity in the visible light spectrum and possess improved surface characteristics.

Claims (19)

1. A method of forming quantum dots, comprising:

forming a first solution by dissolving a bismuth salt in an organic solvent selected from the group consisting of polyethylene glycol, methylene glycol, tri-ethylene glycol, and ethylene glycol;

forming a second solution by dissolving an alkali metal salt in water;

combining the first solution and the second solution to obtain a dual mixture;

combining the dual mixture with an aqueous surfactant solution comprising a surfactant to obtain a final mixture comprising the bismuth oxyhalide quantum dots, wherein the surfactant is a polyoxyethylene sorbitan monooleate; and

filtering the final solution to obtain bismuth oxyhalide quantum dots, wherein the bismuth oxyhalide quantum dots have a size of from 1 nm to 8.0 nm by SEM and a Bi:I molar ratio of 1:1,

wherein the alkali metal salt is selected from the group consisting of LiI, NaI, KI, and CsI, and

wherein the method is carried out without added heat.

2. The method of claim 1 , wherein the bismuth salt is Bi(NO 3 ) 3 , and wherein the first solution, the second solution, the dual mixture and the final mixture are maintained at a temperature of 5° C. during the forming and the combining.

3. The method of claim 1 , wherein the dual mixture is added to the surfactant solution such that the ratio of dual mixture to surfactant solution is 1:4 wt %.

4. The method of claim 1 , wherein the dual mixture is stirred for 5 to 10 minutes at a temperature of 15 to 25° C.

5. The method of claim 1 , wherein the final mixture is stirred for 10 to 15 minutes at a temperature of 15 to 25° C.

6. The method of claim 1 , wherein the final solution is filtered by a vacuum.

7. The method of claim 1 , wherein the bismuth quantum dots are dried for 2 to 4 hours at a temperature of 100 to 115° C.

8. The method of claim 1 , wherein the surfactant in the final mixture is present in an amount between 0.5 to 2.2 wt %.

9. The method of claim 1 , wherein the alkali metal salt is KI.

10. The method of claim 1 , wherein the bismuth oxyhalide quantum dots have a surface area of 59 to 82 m 2 /g.

11. The method of claim 1 , wherein the bismuth oxyhalide quantum dots have a band gap energy (E g ) of 1.80 to 2 eV.

12. The method of claim 1 , wherein the organic solvent is ethylene glycol.

Continuity (3)
Continuation 18968443 · Dec 4, 2024
Continuation 18798885 · Aug 9, 2024
Continuation 18665855 · May 16, 2024
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