Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
In one embodiment, a semiconductor manufacturing apparatus includes a magnification difference acquirer configured to acquire a value of difference in magnification between a first substrate and a second substrate. The apparatus further includes a deformation amount determiner configured to determine a value of deformation amount of a chuck that holds the first or second substrate, based on the value of the difference in magnification. The apparatus further includes a gap determiner configured to determine a value of a gap between the first substrate and the second substrate, based on the value of the deformation amount. The apparatus further includes a bonding controller configured to control the deformation amount to the determined value and control the gap to the determined value, before the first substrate and the second substrate are bonded together.
1. A semiconductor manufacturing apparatus comprising:
a magnification difference acquirer configured to acquire a value of difference in magnification between a first substrate and a second substrate;
a deformation amount determiner configured to determine a value of deformation amount of a chuck that holds the first or second substrate, based on the value of the difference in magnification;
a gap determiner configured to determine a value of a gap between the first substrate and the second substrate, based on the value of the deformation amount; and
a bonding controller configured to control the deformation amount to the determined value and control the gap to the determined value, before the first substrate and the second substrate are bonded together.
2. The apparatus of claim 1 , wherein the deformation amount determiner determines the value of the deformation amount such that the difference in magnification decreases when the deformation amount is controlled to the determined value.
3. The apparatus of claim 1 , wherein the gap determiner determines the value of the gap such that the gap decreases as the deformation amount increases.
4. The apparatus of claim 1 , wherein the gap determiner determines the value of the gap between a center of the first substrate and a center of the second substrate.
5. The apparatus of claim 1 , further comprising a pressing force determiner configured to determine a value of a pressing force to press the first or second substrate, based on the value of the gap,
wherein the bonding controller controls the pressing force to the determined value, when the first substrate and the second substrate are bonded together.
6. The apparatus of claim 5 , wherein the pressing force determiner determines a value of a pressing force to press a center of the first or second substrate.
7. The apparatus of claim 5 , wherein the pressing force determiner determines a value of a pressing force to press the first substrate, and the deformation amount determiner determines a value of deformation amount of the chuck that holds the second substrate.
8. The apparatus of claim 1 , further comprising a bonder configured to be controlled by the bonding controller to bond the first substrate and the second substrate together.
9. The apparatus of claim 8 , wherein the bonder includes a sucker configured to suck the first substrate, and a presser configured to press the first substrate with the pressing force.
10. The apparatus of claim 8 , wherein
the bonder includes a first support configured to support a chuck that holds the first substrate, and a second support configured to support a chuck that holds the second substrate, and
the gap is controlled to the determined value by controlling the first or second support by the bonding controller.
11. A method of manufacturing a semiconductor device, comprising:
acquiring a value of difference in magnification between a first substrate and a second substrate;
determining a value of deformation amount of a chuck that holds the first or second substrate, based on the value of the difference in magnification;
determining a value of a gap between the first substrate and the second substrate, based on the value of the deformation amount; and
controlling the deformation amount to the determined value and controlling the gap to the determined value, before the first substrate and the second substrate are bonded together.
12. The method of claim 11 , wherein the value of the gap is determined for each pair of the first and second substrates.
13. The method of claim 11 , wherein the value of the deformation amount is determined such that the difference in magnification decreases when the deformation amount is controlled to the determined value.
14. The method of claim 11 , wherein the value of the gap is determined such that the gap decreases as the deformation amount increases.
15. The method of claim 11 , further comprising determining a value of a pressing force to press the first or second substrate, based on the value of the gap,
wherein the pressing force is controlled to the determined value, when the first substrate and the second substrate are bonded together.
16. The method of claim 15 , wherein the determination of the value of the pressing force determines a value of a pressing force to press a center of the first or second substrate.
17. The method of claim 15 , wherein the determination of the value of the pressing force determines a value of a pressing force to press the first substrate, and the determination of the value of the deformation amount determines a value of the deformation amount of the chuck that holds the second substrate.
18. The method of claim 11 , further comprising bonding the first substrate and the second substrate together by a bonder, while controlling the deformation amount to the determined value and controlling the gap to the determined value.
19. The method of claim 18 , wherein the bonder includes a sucker configured to suck the first substrate, and a presser configured to press the first substrate with the pressing force.
20. The method of claim 18 , wherein
the bonder includes a first support configured to support a chuck that holds the first substrate, and a second support configured to support a chuck that holds the second substrate, and
the gap is controlled to the determined value by controlling the first or second support.