STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance
View Patent ↗An STT-MRAM device incorporating a multiplicity of MTJ junctions is encapsulated so that it dissipates heat produced by repeated read/write processes and is simultaneously shielded from external magnetic fields of neighboring devices. In addition, the encapsulation layers can be structured to reduced top lead stresses that have been shown to affect DR/R and Hc. We provide a device design and its method of fabrication that can simultaneously address all of these problems.
1. A device comprising:
a first magnetic tunneling junction (MTJ) stack;
a first encapsulation layer disposed on a sidewall surface of the first MTJ stack;
a first magnetic shield layer disposed on the first encapsulation layer along the sidewall surface of the first MTJ stack;
a second encapsulation layer disposed on the first encapsulation layer along the sidewall surface of the first MTJ stack;
a dielectric layer disposed directly on the first encapsulation layer, the magnetic shield layer and the second encapsulation layer such that the dielectric layer physically contacts the first encapsulation layer, the magnetic shield layer and the second encapsulation layer; and
a conductive line disposed over the dielectric layer and electrically coupled to the first MTJ stack.
2. The device of claim 1 , further comprising a second MTJ stack, wherein the first encapsulation layer extends continuously from the first MTJ stack to the second MTJ stack.
3. The device of claim 1 , wherein the first encapsulation layer physically contacts the conductive line.
4. The device of claim 3 , wherein the first magnetic shield layer, the second encapsulation layer and the dielectric layer physically contact the conductive line.
5. The device of claim 1 , wherein the first magnetic shield layer physically contacts the conductive line, the second encapsulation layer, the first encapsulation layer and the first MTJ stack.
6. The device of claim 5 , wherein the magnetic shield layer is positioned between the conductive line and the second encapsulation layer, the first encapsulation layer and the first MTJ stack thereby preventing the second encapsulation layer, the first encapsulation layer and the first MTJ stack from physically contacting the conductive line.
7. The device of claim 1 , wherein the first encapsulation layer includes a dielectric material,
wherein the first magnetic shield layer includes a first metal material, and
wherein the second encapsulation layer includes a second metal material that is different from the first metal material.
8. The device of claim 1 , wherein the second encapsulation layer is a first heat shield layer formed of a different material than the first magnetic shield layer.
9. A device comprising:
a first magnetic tunneling junction (MTJ) stack;
a first encapsulation layer disposed on the first MTJ stack;
a first heat shield layer disposed on the first encapsulation layer;
a first magnetic shield layer disposed on the first encapsulation layer;
a conductive feature disposed directly on the first heat shield layer, the first magnetic shield layer and the first MTJ stack; and
an interlayer dielectric fill layer extending continuously from a bottom surface of the conductive feature to a top surface of the first encapsulation layer, the top surface of the first encapsulation layer facing the bottom surface of the conductive feature.
10. The device of claim 9 , wherein the conductive feature is further disposed directly on the first encapsulation layer.
11. The device of claim 9 , wherein the first heat shield layer is disposed directly on the first encapsulation layer, and
wherein the first magnetic shield layer is disposed directly on the first heat shield layer.
12. The device of claim 9 , wherein the first heat shield layer is disposed directly on the first magnetic shield layer, and
wherein the first magnetic shield layer is disposed directly on the first encapsulation layer.
13. The device of claim 9 , further comprising:
a second MTJ stack spaced apart from the first MTJ stack;
the first encapsulation extending continuously from the first MTJ stack to the second MTJ stack;
a second heat shield layer disposed on the first encapsulation layer that is disposed on the second MTJ stack;
a second magnetic shield layer disposed on the first encapsulation layer that is disposed on the second MTJ stack;
the conductive feature extending continuously from the first MTJ stack to the second MTJ stack.
14. The device of claim 13 , wherein the first heat shield layer is discontinuous with respect to the second shield layer, and
wherein the first magnetic shield layer is discontinuous with respect to the second magnetic shield layer.
15. The device of claim 14 , wherein the interlayer dielectric fill layer interfaces with both the first heat shield layer and the first magnetic shield layer.
16. A device comprising: a first magnetic tunneling junction (MTJ) stack and a second MTJ stack; a first encapsulation layer disposed directly on the first MTJ stack and the second MTJ stack such that the first encapsulation layer extends continuously from the first MTJ stack to the second MTJ stack; a first heat shield layer disposed on the first MTJ stack and a second heat shield layer disposed on the second MTJ stack; a first magnetic shield layer disposed on the first MTJ stack and a second magnetic shield layer disposed on the second MTJ stack; a conductive feature disposed on and interfacing with the first and second heat shield layers, the first and second magnetic shield layers and the first and second MTJ stacks; and a dielectric fill layer extending continuously from a bottom surface of the conductive feature to a top surface of the first encapsulation layer, the top surface of the first encapsulation layer facing the bottom surface of the conductive feature.
17. The device of claim 16 , wherein the dielectric fill layer further extends continuously from the first heat shield layer to the second heat shield layer.
18. The device of claim 16 , wherein the dielectric fill layer further extends continuously from the first magnetic shield layer to the second magnetic shield layer.
19. The device of claim 16 , wherein the first encapsulation layer is formed of a material selected from the group consisting of SiN, SiO 2 , Al 2 O 3 and MgO,
wherein the first heat shield layer is formed of a material selected from the group consisting of Ti, TiN, Cu, Ta, TaN, W, Al and AN, and
wherein the first magnetic shield layer is formed of a material selected from the group consisting of NiFe and CoFe.
20. The device of claim 19 , wherein the second heat shield layer is formed of the same material as the first heat shield layer, and
wherein the second magnetic shield layer is formed of the same material as the first magnetic shield layer.