Antenna assisted ReRAM formation
A memory structure comprises a ReRAM module embedded in a substrate. An insulative layer is formed on the substrate. A first electrode is located on the insulative layer. The first electrode is proximately connected to a first end of the ReRAM module and comprises a first surface area. A second electrode is located on the insulative layer. The second electrode is proximately connected to a second end of the ReRAM module. The second electrode comprises a second surface area, a plasma-interacting component, and a resistive component. The resistive component is located between the plasma-interacting component and the ReRAM module. A ratio of the first surface area to the second surface area creates a voltage between the first electrode and second electrode when the first surface area and second surfaces area are exposed to an application of plasma. The voltage forms a conductive filament in the ReRAM module.
1. A memory structure comprising:
a ReRAM module embedded in a substrate;
an insulative layer on a surface of the substrate;
a first electrode on a surface of the insulative layer, wherein the first electrode is proximately connected to a first end of the ReRAM module and comprises a first surface area; and
a second electrode on the surface of the insulative layer, wherein the second electrode is proximately connected to a second end of the ReRAM module and comprises:
a second surface area that is different than the first surface area.
2. The memory structure of claim 1 , wherein the second electrode further comprises a plasma-interacting component on the surface of the insulative layer.
3. The memory structure of claim 2 , wherein the second electrode further comprises a resistive component located on the surface of the insulative layer between the plasma-interacting component and the ReRAM module.
4. The memory structure of claim 1 , wherein a ratio of the first surface area to the second surface area creates a formation voltage between the first electrode and second electrode when the first surface area and second surface area are exposed to an application of plasma during formation of a conductive filament.
5. The memory structure of claim 4 , wherein the conductive filament has a target resistance value.
6. The memory structure of claim 5 , wherein the resistive component provides a first resistance between the first electrode and the second electrode, wherein the first resistance is less than or equal to the target resistance value.
7. The memory structure of claim 1 , wherein the first electrode and second electrode are composed of a material that can be chemically etched off the insulative layer.
8. The memory structure of claim 1 , wherein the first electrode is composed of a material that can be chemically etched off the insulative layer.
9. The memory structure of claim 1 , wherein the second electrode is composed of a material that can be chemically etched off the insulative layer.
10. The memory structure of claim 1 , wherein at least one of the first end and the second end of the ReRAM module is connected to a memory-cell transistor in the memory structure.