Heat dissipation structures for integrated circuit packages and methods of forming the same
In an embodiment, a device includes: a package component including an integrated circuit die and conductive connectors connected to the integrated circuit die, the conductive connectors disposed at a front-side of the package component, the integrated circuit die exposed at a back-side of the package component; a heat dissipation layer on the back-side of the package component and on sidewalls of the package component; an adhesive layer on a back-side of the heat dissipation layer, a portion of a sidewall of the heat dissipation layer being free from the adhesive layer; and a package substrate connected to the conductive connectors.
1. A device comprising:
a package component comprising an integrated circuit die and conductive connectors connected to the integrated circuit die, the conductive connectors disposed at a front-side of the package component, the integrated circuit die exposed at a back-side of the package component;
a heat dissipation layer on the back-side of the package component and on sidewalls of the package component;
an adhesive layer on a back-side of the heat dissipation layer, the adhesive layer further disposed on a first portion of a sidewall of the heat dissipation layer, a second portion of the sidewall of the heat dissipation layer being free from the adhesive layer; and
a package substrate comprising bond pads in contact with the conductive connectors, the package substrate being separated from the heat dissipation layer.
2. The device of claim 1 , wherein the front-side of the package component is free of the heat dissipation layer.
3. The device of claim 1 , wherein the heat dissipation layer is also on the front-side of the package component.
4. The device of claim 3 , wherein the heat dissipation layer has a projecting portion extending away from the front-side of the package component.
5. The device of claim 3 , wherein portions of the heat dissipation layer on the front-side of the package component are planar.
6. The device of claim 1 , wherein the heat dissipation layer comprises aluminum, titanium, titanium nitride, nickel, nickel vanadium, silver, gold, septunseptium, copper, or combinations thereof.
7. The device of claim 1 further comprising:
an underfill between the package substrate and the package component, the underfill contacting the heat dissipation layer.
8. The device of claim 1 , wherein the package component is an integrated fan-out package component.
9. The device of claim 1 , wherein the package component is a chip-on-wafer package component.
10. A device comprising:
an integrated circuit die;
an encapsulant around the integrated circuit die;
a redistribution structure on the encapsulant, the redistribution structure comprising dielectric layers and redistribution lines among the dielectric layers;
a heat dissipation layer extending continuously along a front-side surface of the redistribution structure, a sidewall of the dielectric layers of the redistribution structure, a sidewall of the encapsulant, a back-side surface of the encapsulant, and a back-side surface of the integrated circuit die;
an adhesive layer on a back-side surface of the heat dissipation layer, the adhesive layer different from the heat dissipation layer; and
a heat spreader on the adhesive layer.
11. The device of claim 10 , wherein the heat spreader is a heatsink.
12. The device of claim 10 further comprising:
a package substrate connected to the redistribution structure, the heat spreader being a thermal lid attached to the heat dissipation layer and the package substrate.
13. The device of claim 10 , wherein the heat dissipation layer has a first thickness along the sidewall of the redistribution structure and the sidewall of the encapsulant, the heat dissipation layer has a second thickness along the back-side surface of the encapsulant and the back-side surface of the integrated circuit die, and the first thickness is less than or equal to the second thickness.
14. A method comprising:
packaging an integrated circuit die in a package region of a wafer;
singulating the package region from the wafer to form a package component;
after singulating the package region, placing the package component on a support structure;
depositing a heat dissipation layer by conformally sputtering a metal on the support structure, on a front-side of the package component, on a back-side of the package component, and on sidewalls of the package component;
singulating the heat dissipation layer by lifting the package component from the support structure; and
connecting the package component to a package substrate.
15. The method of claim 14 , wherein the support structure is a tray, the package component is placed in a recess of the tray, and the package component is lifted out of the recess of the tray.
16. The method of claim 15 , wherein the tray comprises standoffs at a bottom of the recess, the package component is placed on the standoffs, and the heat dissipation layer is deposited on outer sidewalls of the standoffs.
17. The method of claim 14 , wherein the support structure is a tape, the package component is placed on the tape, and the package component is lifted off the tape.
18. The method of claim 17 , wherein the package component comprises conductive connectors, the conductive connectors being pressed into the tape, the method further comprising:
after lifting the package component off the tape, cleaning the conductive connectors.
19. The method of claim 14 , further comprising:
dispensing an adhesive layer on a top surface and a sidewall of the heat dissipation layer; and
pressing a heat spreader on the adhesive layer.
20. The device of claim 1 , wherein the heat dissipation layer is also on the front-side of the package component, and the heat dissipation layer is a single continuous layer.