Semiconductor device structure with conductive bumps
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first conductive structure over the semiconductor substrate. The first conductive structure has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive structure. The semiconductor device structure also includes a second conductive structure over the semiconductor substrate. The second conductive structure is substantially as wide as the first conductive structure, and the second conductive structure has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive structure. The first conductive structure is closer to a center point of the semiconductor substrate than the second conductive structure. The second protruding portion is wider than the first protruding portion, and bottoms of the first protruding portion and the second protruding portion are substantially level with each other.
1. A semiconductor device structure, comprising:
a semiconductor substrate;
a first conductive structure over the semiconductor substrate, wherein the first conductive structure has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive structure; and
a second conductive structure over the semiconductor substrate, wherein the second conductive structure is substantially as wide as the first conductive structure, the second conductive structure has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive structure, the first conductive structure is closer to a center point of the semiconductor substrate than the second conductive structure, the second protruding portion is wider than the first protruding portion, and bottoms of the first protruding portion and the second protruding portion are substantially level with each other.
2. The package structure as claimed in claim 1 , wherein tops of the first conductive structure and the second conductive structure are substantially level with each other.
3. The package structure as claimed in claim 1 , wherein the first protruding portion has a first slanted sidewall, and the second protruding portion has a second slanted sidewall.
4. The semiconductor device structure as claimed in claim 1 , further comprising:
a third conductive structure over the semiconductor substrate, wherein the third conductive structure has a third protruding portion extending towards the semiconductor substrate from a lower surface of the third conductive structure, and the second conductive structure is between the first conductive structure and the third conductive structure.
5. The semiconductor device structure as claimed in claim 4 , wherein a bottom of the third protruding portion is substantially as wide as the bottom of the second protruding portion.
6. The semiconductor device structure as claimed in claim 4 , wherein a bottom of the third protruding portion is wider than the bottom of the second protruding portion.
7. The semiconductor device structure as claimed in claim 1 , wherein the bottom of the first protruding portion has a first oval profile, the bottom of the first protruding portion has a first long axis, the bottom of the second protruding portion has a second oval profile, and the bottom of the second protruding portion has a second long axis.
8. The semiconductor device structure as claimed in claim 7 , wherein the first long axis is substantially parallel to the second long axis.
9. The semiconductor device structure as claimed in claim 7 , wherein the first long axis and the second long axis are not parallel to each other, and the first long axis and the second long axis are aligned with the center point of the semiconductor substrate.
10. The semiconductor device structure as claimed in claim 1 , further comprising:
a first conductive via between the first conductive structure and the semiconductor substrate; and
a second conductive via between the second conductive structure and the semiconductor substrate, wherein the second conductive via is wider than the first conductive via.
11. A semiconductor device structure, comprising:
a semiconductor substrate;
a first conductive structure over the semiconductor substrate, wherein the first conductive structure has a first protruding portion extending towards the semiconductor substrate, and a top of the first conductive structure is wider than the first protruding portion; and
a second conductive structure over the semiconductor substrate, wherein the second conductive structure is substantially as wide as the first conductive structure, the second conductive structure has a second protruding portion extending towards the semiconductor substrate, a top of the second conductive structure is wider than the second protruding portion, the second protruding portion is wider than the first protruding portion, and tops of the first protruding portion and the second protruding portion are substantially level with each other, wherein the first conductive structure is closer to a center portion of the semiconductor substrate than the second conductive structure.
12. The package structure as claimed in claim 11 , wherein bottoms of the first protruding portion and the second protruding portion are substantially level with each other.
13. The semiconductor device structure as claimed in claim 11 , further comprising:
a first conductive via between the first conductive structure and the semiconductor substrate; and
a second conductive via between the second conductive structure and the semiconductor substrate, wherein the second conductive via is wider than the first conductive via.
14. The semiconductor device structure as claimed in claim 13 , wherein the first conductive via is directly below the first protruding portion, and the second conductive via is laterally spaced apart from the second protruding portion.
15. A semiconductor device structure, comprising:
a semiconductor substrate;
a first conductive structure over the semiconductor substrate, wherein the first conductive structure has a first protruding portion extending towards the semiconductor substrate, and a top of the first conductive structure is wider than the first protruding portion;
a second conductive structure over the semiconductor substrate, wherein the second conductive structure is substantially as wide as the first conductive structure, the second conductive structure has a second protruding portion extending towards the semiconductor substrate, a top of the second conductive structure is wider than the second protruding portion, the second protruding portion is wider than the first protruding portion, and bottoms of the first protruding portion and the second protruding portion are substantially aligned with each other;
a first conductive via between the first conductive structure and the semiconductor substrate; and
a second conductive via between the second conductive structure and the semiconductor substrate, wherein the second conductive via is wider than the first conductive via.
16. The semiconductor device structure as claimed in claim 15 , wherein the first conductive via is directly below the first protruding portion, and the second conductive via is laterally spaced apart from the second protruding portion.
17. The semiconductor device structure as claimed in claim 16 , wherein the first conductive structure extends across opposite sidewalls of the first conductive via.
18. The semiconductor device structure as claimed in claim 15 , wherein the first conductive via is laterally spaced apart from the first protruding portion, and the second conductive via is laterally spaced apart from the second protruding portion.
19. The semiconductor device structure as claimed in claim 11 , wherein the first protruding portion has a slanted sidewall.
20. The semiconductor device structure as claimed in claim 15 , wherein the first conductive structure is closer to a center portion of the semiconductor substrate than the second conductive structure.