Display device using micro LED and method for manufacturing same
The present specification provides a semiconductor light emitting element having a new structure with a wider light emitting area than a conventional structure, when implementing a display device by using semiconductor light emitting elements. A semiconductor light emitting element according to one embodiment of the present invention is characterized by comprising: a first conductive-type semiconductor layer having a first side inclination angle; a second conductive-type semiconductor layer having a second side inclination angle, which is positioned on the first conductive-type semiconductor layer; and an active layer having a third side inclination angle, which is disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, wherein the second side inclination angle and the third side inclination angle are the same.
1. A display device, comprising:
a substrate;
assembly electrodes located on the substrate;
an insulating layer located on the assembly electrodes;
a partition wall located on the insulating layer and shaped to define an assembly recess; and
a semiconductor light emitting element assembled with the assembly recess of the partition wall;
wherein the semiconductor light emitting element comprises:
a first conductivity-type semiconductor layer having a first side inclination angle;
a second conductivity-type semiconductor layer having a second side inclination angle and being located on the first conductivity-type semiconductor layer; and
an active layer having a third side inclination angle and disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer.
2. The display device of claim 1 , wherein the second side inclination angle and the third side inclination angle are equal.
3. The display device of claim 2 , wherein a first area of the first conductivity-type semiconductor layer is greater than a second area of the second conductivity-type semiconductor layer.
4. The display device of claim 3 , wherein the semiconductor light emitting element further comprises:
a first conductivity-type electrode located on an inclined side surface of the first conductivity-type semiconductor layer having the first side inclination angle; and
a second conductivity-type electrode located on the second conductivity-type semiconductor layer.
5. The display device of claim 4 , wherein the semiconductor light emitting element further comprises a passivation layer shaped to surround an inclined side surface of the active layer having a third conductivity-type semiconductor layer.
6. The display device of claim 5 , wherein the passivation layer is formed of amorphous Silicon (a-Si).
7. The display device of claim 2 , wherein the first side inclination angle and the third side inclination angle are equal.
8. The display device of claim 2 , wherein the first side inclination angle is greater than the third side inclination angle.
9. The display device of claim 5 , further comprising a first wiring electrode located on the first conductivity-type electrode,
wherein the first wiring electrode is electrically connected to the substrate.
10. The display device of claim 9 , wherein:
the substrate comprises a transistor configured to drive an active matrix; and
the first conductivity-type electrode is electrically connected to the transistor.
11. The display device of claim 1 , wherein the semiconductor light emitting element is a micro Light Emitting Diode (micro-LED) that has a length and width that are each 80 micrometers or less.