Semiconductor structure and manufacturing method thereof
The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base including bit lines arranged at intervals and extending along a first direction, and a semiconductor channel located on partial top surfaces of the bit lines, where along a direction from the bit line to the semiconductor channel, the semiconductor channel includes a first region, a second region, and a third region that are arranged sequentially; a dielectric layer located between adjacent two of the bit lines and on a sidewall of the semiconductor channel; a gate structure at least surrounding the dielectric layer in the second region and extending along a second direction, where the first direction is different from the second direction; an electrical connection layer covering a top surface of the third region and extending to a partial sidewall of the semiconductor channel.
1. A semiconductor structure, comprising:
a base, wherein the base comprises: bit lines arranged at intervals and extending along a first direction, and a semiconductor channel located on partial top surfaces of the bit lines, and along a direction from the bit line to the semiconductor channel, the semiconductor channel comprises a first region, a second region, and a third region that are arranged sequentially;
a dielectric layer located between adjacent two of the bit lines and on a sidewall of the semiconductor channel;
a gate structure at least surrounding the dielectric layer in the second region and extending along a second direction, wherein the first direction is different from the second direction;
an electrical connection layer covering a top surface of the third region and extending to a partial sidewall of the semiconductor channel, wherein the electrical connection layer and the dielectric layer cover a surface of the semiconductor channel; and
an insulating layer located between adjacent two of the semiconductor channels on a same bit line and isolating the gate structure as well as the electrical connection layer on adjacent two of the dielectric layers;
wherein the gate structure comprises:
a first gate layer surrounding the dielectric layer in the second region and extending along the second direction; and
a second gate layer surrounding the dielectric layer in the third region, wherein in a direction perpendicular to a top surface of the bit line, the second gate layer and the first gate layer are disposed at intervals;
wherein along the direction from the bit line to the semiconductor channel, a ratio of a height of the first gate layer surrounding a sidewall of the second region to a height of the semiconductor channel in the second region is 1/2 to 9/10.
2. The semiconductor structure according to claim 1 , wherein the electrical connection layer comprises at least one of lanthanides or zirconium.
3. The semiconductor structure according to claim 1 , wherein along the direction from the bit line to the semiconductor channel, the electrical connection layer on the top surface of the third region is 10 nm to 50 nm.
4. The semiconductor structure according to claim 1 , wherein along a direction perpendicular to the sidewall of the semiconductor channel, a ratio of a width of the electrical connection layer on the sidewall of the semiconductor channel to a width of the semiconductor channel in the third region is 1/5 to 3/5.
5. The semiconductor structure according to claim 1 , wherein along the direction from the bit line to the semiconductor channel, a ratio of a height of the electrical connection layer on the sidewall of the semiconductor channel to a height of the semiconductor channel in the third region is 1/5 to 3/5.
6. The semiconductor structure according to claim 1 , wherein an orthographic projection of the electrical connection layer on the bit line is not overlapped or partially overlapped with an orthographic projection of the gate structure on the bit line.
7. The semiconductor structure according to claim 1 , wherein in a plane perpendicular to the sidewall of the semiconductor channel, a cross-sectional area of the semiconductor channel in the first region, a cross-sectional area of the semiconductor channel in the second region, and a cross-sectional area of the semiconductor channel in the third region are decreased sequentially.
8. The semiconductor structure according to claim 1 , wherein along the first direction, a side surface of the second gate layer away from the sidewall of the semiconductor channel is flush with a side surface of the first gate layer away from the sidewall of the semiconductor channel.
9. The semiconductor structure according to claim 1 , wherein in a direction perpendicular to the sidewall of the semiconductor channel, the first gate layer is thinner than the second gate layer.
10. The semiconductor structure according to claim 1 , wherein along the direction from the bit line to the semiconductor channel, a ratio of a height of the first gate layer surrounding a sidewall of the second region to a height of the semiconductor channel in the second region is 1/2 to 9/10.
11. The semiconductor structure according to claim 1 , further comprising a metal-semiconductor compound structure at least located in a bit line opposite to a bottom of the insulating layer.
12. The semiconductor structure according to claim 11 , wherein along a direction from the semiconductor channels located at two sides of the insulating layer to the insulating layer, the metal-semiconductor compound structure becomes deeper.
13. A method of manufacturing a semiconductor structure, comprising:
providing a base, wherein the base comprises: bit lines arranged at intervals and extending along a first direction, and a semiconductor channel located on partial top surfaces of the bit lines, and along a direction perpendicular to the top surface of the bit line, the semiconductor channel comprises a first region, a second region, and a third region that are arranged sequentially;
forming a dielectric layer located between adjacent two of the bit lines and on a sidewall of the semiconductor channel;
forming a gate structure at least surrounding the dielectric layer in the second region and extending along a second direction, wherein the first direction is different from the second direction;
forming an electrical connection layer covering a top surface of the third region and extending to a partial sidewall of the semiconductor channel, wherein the electrical connection layer and the dielectric layer cover a surface of the semiconductor channel; and
forming an insulating layer located between adjacent two of the semiconductor channels on a same bit line;
wherein the gate structure comprises:
a first gate layer surrounding the dielectric layer in the second region and extending along the second direction; and
a second gate layer surrounding the dielectric layer in the third region, wherein in a direction perpendicular to a top surface of the bit line, the second gate layer and the first gate layer are disposed at intervals;
wherein along the direction from the bit line to the semiconductor channel, a ratio of a height of the first gate layer surrounding a sidewall of the second region to a height of the semiconductor channel in the second region is 1/2 to 9/10.
14. The method of manufacturing according to claim 13 , wherein the providing a base comprises:
providing an initial base, wherein an initial first dielectric layer extending along the first direction is disposed in the initial base; and
patterning the initial base and the initial first dielectric layer, to form the bit lines arranged at intervals, the semiconductor channel, and the initial first dielectric layer located between adjacent bit lines, wherein a top surface of the initial first dielectric layer is not lower than a top surface of the semiconductor channel, the sidewall of the semiconductor channel, a sidewall of the initial first dielectric layer, and the partial top surface of the bit line define a trench, and the trench extends along the second direction.
15. The method of manufacturing according to claim 14 , wherein the forming the dielectric layer, the gate structure, and the insulating layer comprise:
forming a second dielectric layer on a sidewall of the trench in the first region;
forming a first insulating layer, wherein the first insulating layer is located in the trench and isolates adjacent two of the second dielectric layers, and a top surface of the first insulating layer is not lower than the top surface of the semiconductor channel;
forming a third dielectric layer and a first gate layer on the sidewall of the trench in the second region, wherein a top surface of the third dielectric layer is higher than a top surface of the first gate layer;
forming a fourth dielectric layer located between the first insulating layer and the third dielectric layer;
forming a fifth dielectric layer and a second gate layer on the sidewall of the trench in the third region, wherein a top surface of the fifth dielectric layer is higher than a top surface of the second gate layer; and
forming a second insulating layer located between the first insulating layer and the fifth dielectric layer, wherein the insulating layer comprises the first insulating layer and the second insulating layer.
16. The method of manufacturing according to claim 15 , wherein after the trench is formed, and before the second dielectric layer is formed, metal silicidation is performed on a partial top surface of the bit line exposed by the trench, to form a metal-semiconductor compound structure.
17. The method of manufacturing according to claim 15 , wherein the forming an electrical connection layer comprises:
etching the fifth dielectric layer by using the insulating layer as a mask, until the top surface and a partial sidewall of the third region are exposed, to form a groove between the insulating layer and the third region; and
forming the electrical connection layer filling up the groove.
18. The method of manufacturing according to claim 13 , further comprising: doping at least one of lanthanides or zirconium into the electrical connection layer.