Self-aligned metal gate for multigate device
Self-aligned gate cutting techniques for multigate devices are disclosed herein that provide multigate devices having asymmetric metal gate profiles and asymmetric source/drain feature profiles. An exemplary multigate device has a channel layer, a metal gate that wraps a portion of the channel layer, and source/drain features disposed over a substrate. The channel layer extends along a first direction between the source/drain features. A first dielectric fin and a second dielectric fin are disposed over the substrate and configured differently. The channel layer extends along a second direction between the first dielectric fin and the second dielectric fin. The metal gate is disposed between the channel layer and the second dielectric fin. In some embodiments, the first dielectric fin is disposed on a first isolation feature, and the second dielectric fin is disposed on a second isolation feature. The first isolation feature and the second isolation feature are configured differently.
1. A device structure comprising:
a first semiconductor layer and a second semiconductor layer disposed over a base structure, wherein the first semiconductor layer is disposed in a first device region and the second semiconductor layer is disposed in a second device region;
a first gate isolation structure, a second gate isolation structure, and a third gate isolation structure, wherein the second gate isolation structure is disposed between the first gate isolation structure and the third gate isolation structure, the first gate isolation structure and the third gate isolation structure have a first configuration, the second gate isolation structure has a second configuration, and the second configuration is different than the first configuration; and
a gate disposed over the first semiconductor layer and the second semiconductor layer, wherein in a cross-sectional view along a gate lengthwise direction, the gate has:
a first portion that extends from the first gate isolation structure over the first semiconductor layer, over the second gate isolation structure, and over the second semiconductor layer to the third gate isolation structure,
a second portion that extends from the first gate isolation structure to the second gate isolation structure,
a third portion that extends from the second gate isolation structure to the third gate isolation structure
a fourth portion that extends from the first gate isolation structure to the first semiconductor layer, wherein the first semiconductor layer extends from the fourth portion to the second gate isolation structure, and
a fifth portion that extends from the second semiconductor layer to the third gate isolation structure, wherein the second semiconductor layer extends from the fifth portion to the second gate isolation structure.
2. The device structure of claim 1 , wherein:
the first gate isolation structure and the third gate isolation structure have a first height;
the second gate isolation structure has a second height; and
the first height is greater than the second height.
3. The device structure of claim 1 , wherein:
the first gate isolation structure and the third gate isolation structure have a first width;
the second gate isolation structure has a second width; and
the first width is less than the second width.
4. The device structure of claim 1 , further comprising:
a first substrate isolation structure, a second substrate isolation structure, and a third substrate isolation structure, wherein the second substrate isolation structure is disposed between the first substrate isolation structure and the third substrate isolation structure;
the first gate isolation structure is disposed over the first substrate isolation structure, the second gate isolation structure is disposed over the second substrate isolation structure, and the third gate isolation structure is disposed over the third substrate isolation structure; and
the first substrate isolation structure and the third substrate isolation structure have a third configuration, the second substrate isolation structure has a fourth configuration, and the third configuration is different than the first configuration.
5. The device structure of claim 4 , wherein:
the base structure includes a third semiconductor layer and a fourth semiconductor layer, wherein the third semiconductor layer is disposed between the first substrate isolation structure and the second substrate isolation structure and the fourth semiconductor layer is disposed between the second substrate isolation structure and the third substrate isolation structure;
the first semiconductor layer is disposed over the third semiconductor layer; and
the second semiconductor layer is disposed over the fourth semiconductor layer.
6. The device structure of claim 5 , wherein:
the gate has a sixth portion that extends from the first gate isolation structure to the second gate isolation structure, wherein the sixth portion is disposed on the first substrate isolation structure and the third semiconductor layer; and
the gate has a seventh portion that extends from the second gate isolation structure to the third gate isolation structure, wherein the seventh portion is disposed on the second substrate isolation structure and the fourth semiconductor layer.
7. The device structure of claim 4 , wherein:
the gate has a sixth portion that extends from the first gate isolation structure to the second gate isolation structure, wherein the sixth portion is disposed on the first substrate isolation structure; and
the gate has a seventh portion that extends from the second gate isolation structure to the third gate isolation structure, wherein the seventh portion is disposed on the second substrate isolation structure.
8. The device structure of claim 4 , wherein:
the first gate isolation structure and the third gate isolation structure have a first width; and
the first substrate isolation structure and the third substrate isolation structure have a second width that is greater than the first width.
9. The device structure of claim 8 , wherein the second gate isolation structure and the second substrate isolation structure have a third width.
10. The device structure of claim 1 , wherein:
the fourth portion is connected to the first portion and the second portion; and
the fifth portion is connected to the first portion and the third portion.
11. A device structure comprising:
a base structure including a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer is disposed in a first device region and the second semiconductor layer is disposed in a second device region;
a first source/drain isolation structure, a second source/drain isolation structure, and a third source/drain isolation structure, wherein the second source/drain isolation structure is disposed between the first source/drain isolation structure and the third source/drain isolation structure, the first source/drain isolation structure and the third source/drain isolation structure have a first configuration, the second source/drain isolation structure has a second configuration, and the second configuration is different than the first configuration;
a first epitaxial source/drain disposed over the first semiconductor layer and a second epitaxial source/drain disposed over the second semiconductor layer; and
wherein in a cross-sectional view along a gate lengthwise direction:
the first epitaxial source/drain extends from the first source/drain isolation structure to the second source/drain isolation structure, and
the second epitaxial source/drain extends from the second source/drain isolation structure to the third source/drain isolation structure.
12. The device structure of claim 11 , wherein the first source/drain isolation structure and the third source/drain isolation structure have a first width along the gate lengthwise direction, the second source/drain isolation structure has a second width along the gate lengthwise direction, and the first width is less than the second width.
13. The device structure of claim 11 , further comprising:
a first substrate isolation structure, a second substrate isolation structure, and a third substrate isolation structure, wherein the second substrate isolation structure is disposed between the first substrate isolation structure and the third substrate isolation structure, wherein the first source/drain isolation structure is disposed over the first substrate isolation structure, the second source/drain isolation structure is disposed over the second substrate isolation structure, and the third source/drain isolation structure is disposed over the third substrate isolation structure;
wherein the first substrate isolation structure and the third substrate isolation structure have a third configuration, the second substrate isolation structure has a fourth configuration, and the third configuration is different than the fourth configuration; and
wherein each of the third configuration and the fourth configuration is different than the first configuration and the second configuration.
14. The device structure of claim 13 , wherein the first source/drain isolation structure and the third source/drain isolation structure have a first width along the gate lengthwise direction, the first substrate isolation structure and the third substrate isolation structure have a second width along the gate lengthwise direction, the second source/drain isolation structure and the second substrate isolation structure have a third width along the gate lengthwise direction, and the first width is less than the second width.
15. The device structure of claim 11 , wherein:
a first side of the first epitaxial source/drain and a first side of the second epitaxial source/drain face the second source/drain isolation structure, a second side of the first epitaxial source/drain faces the first source/drain isolation structure, and a second side of the second epitaxial source/drain faces the third source/drain isolation structure;
lengths of facets of the first side of the first epitaxial source/drain are less than lengths of facets of the second side of the first epitaxial source/drain; and
lengths of facets of the first side of the second epitaxial source/drain are less than lengths of facets of the second side of the second epitaxial source/drain.
16. The device structure of claim 11 , wherein:
a first side of the first epitaxial source/drain interfaces with the first source/drain isolation structure and a second side of the first epitaxial source/drain interfaces with the second source/drain isolation structure, wherein a length of the first side of the first epitaxial source/drain is less than a length of the second side of the first epitaxial source/drain; and
a first side of the second epitaxial source/drain interfaces with the third source/drain isolation structure and a second side of the second epitaxial source/drain interfaces with the second source/drain isolation structure, wherein a length of the first side of the second epitaxial source/drain is less than a length of the second side of the second epitaxial source/drain.
17. The device structure of claim 11 , further comprising a contact etch stop layer, wherein the contact etch stop layer wraps a top portion of the first source/drain isolation structure, a top portion of the second source/drain isolation structure, and a top portion of the third source/drain isolation structure.
18. A method comprising:
forming a first stack of layers and a second stack of layers extending from a substrate, wherein:
the first stack of layers forms a first sidewall of a first trench and a first sidewall of a second trench,
the second stack of layers forms a second sidewall of the second-first trench and a first sidewall of a third trench, and
the substrate forms a bottom of the first trench, a bottom of the second trench, and a bottom of the third trench;
forming a first isolation structure in a lower portion of the first trench, a second isolation structure in a lower portion of the second trench, and a third isolation structure in a lower portion of the third trench, wherein the first isolation structure, the second isolation structure, and the third isolation structure fill the lower portion of the first trench, the lower portion of the second trench, and the lower portion of the third trench, respectively;
forming a sacrificial layer over the second isolation structure that partially fills an upper portion of the second trench, wherein the sacrificial layer is disposed on a side of the first stack of layers that forms the first sidewall of the second trench, a side of the second stack of layers that forms the second sidewall of the second trench, a top of the first stack of layers, and a top of the second stack of layers;
forming a fourth isolation structure in an upper portion of the first trench, a fifth isolation structure in a remainder of the upper portion of the second trench, and a sixth isolation structure in an upper portion of the third trench by:
forming dielectric structures that fill the upper portion of the first trench, the remainder of the upper portion of the second trench, and the upper portion of the third trench, wherein the dielectric structures include an oxygen-comprising dielectric layer wrapped by a silicon-comprising dielectric liner, and
replacing top portions of the dielectric structures in the upper portions of the first trench, the second trench, and the third trench with metal-and-oxygen comprising layers; and
replacing the sacrificial layer, a portion of the first stack of layers, and a portion of the second stack of layers with one or more gate layers.
19. The method of claim 18 , wherein:
the portion of the first stack of layers is a first portion of the first stack of layers, the portion of the second stack of layers is a first portion of the second stack of layers, and a first portion of the sacrificial layer is replaced with the one or more gate layers; and
the method further includes replacing a second portion of the sacrificial layer, a second portion of the first stack of layers, and a second portion of the second stack of layers with one or more source/drain layers.
20. The method of claim 19 , further comprising reducing a thickness of a portion of the metal-and-oxygen comprising layers in source/drain regions when replacing the second portion of the sacrificial layer, the second portion of the first stack of layers, and the second portion of the second stack of layers with the one or more source/drain layers.