Organometallic photoresist developer compositions and processing methods
Developer compositions are described based on blends of solvents, in which the developers are particularly effective for EUV patterning using organometallic based patterning compositions. Methods for use of these developing compositions are described. The blends of solvents can be selected based on Hansen solubility parameters. Generally, one solvent has low polarity as express by the sum of δP+δH, and a second solvent component of the developer has a higher value of δP+δH. Corresponding solvent compositions are described.
1. A method for developing a radiation exposed organometallic patterning layer with a latent image formed by exposed and non-exposed regions comprising an organometallic oxide/hydroxide network with exposed regions having increased hydrophilic character, the method comprising contacting the radiation exposed organometallic patterning layer with a developer composition comprising a solvent blend with from about 0.25 volume percent to about 45 volume percent alcohol, glycol ether, pyrrolidone, lactone or a combination thereof, and at least 55 volume percent ketone, ether, ester, or combinations thereof.
2. The method of claim 1 wherein the contacting step is performed using a puddle method, a dip method, a spin coating method, or a spray method wherein the developer composition is applied to the surface of the radiation exposed organometallic patterning layer and dried by spinning and/or blowing for a selected period of time from about 2 seconds to about 30 minutes.
3. The method of claim 1 further comprising rinsing the developed pattern with a rinse solution wherein the rinse solution comprises the developer composition.
4. The method of claim 1 further comprising baking the radiation exposed organometallic patterning layer at a temperature (PEB temperature) from about 120° C. to about 190° C. before contacting the radiation exposed organometallic patterning layer with the developer composition.
5. The method of claim 4 wherein a duration time of contacting, the PEB temperature, and the developer composition are selected to produce a desired feature size and/or defect rate of the developed patterned structure, wherein the duration time of contacting is from about 2 seconds to about 30 minutes.
6. The method of claim 1 wherein the developed patterned layer comprises a periodic array of lines and has an average line-width roughness that is no more than about 5 nm.
7. The method of claim 1 wherein the developer composition further comprises one or more property modifier additives wherein the developer composition comprises no more than about 5 weight percent of the additives.
8. The method of claim 1 further comprising:
either the step of depositing a material based on the developed patterned layer or etching the substrate based on the developed patterned layer; and
removing the developed patterned layer to form a processed substrate.
9. The method of claim 1 wherein the organometallic oxide/hydroxide network is represented by the formula R z SnO (2-(z/2)-(x/2) )(OH) x where 0<z≤2 and 0<(z+x)≤4, in which R is a hydrocarbyl group with 1-31 carbon atoms or blends of hydrocarbyl groups each forming a carbon bond with the tin atom.
10. The method of claim 1 wherein the developer composition comprises 2-heptanone and/or PGMEA.
11. The method of claim 1 wherein the developer composition comprises cyclohexyl acetate, dibutyl oxalate, propylene glycol monomethyl ether acetate, ethyl acetate, ethyl lactate, n-butyl acetate, butyrolactone, methyl ethyl ketone, acetone, 2-butanone, cyclohexanone, 2-heptanone, 2-octanone, or combinations thereof.
12. The method of claim 1 wherein the developer composition comprises 1-ethyl-2-pyrrolidone, 2-butanone, 2-heptanone, diisobutyl ketone, 2-butanol, 2-heptanol, 4-methyl-2-pentanol, ethyl acetate, cyclohexyl acetate, dibutyl oxalate, methyl laurate, and/or PGMEA.
13. The method of claim 1 wherein the developer composition further comprises up to 10 vol % water additive.
14. The method of claim 1 further comprising forming the organometallic oxide/hydroxide network by depositing a precursor solution comprising one or more distinct compounds RSnX 3 , wherein R is a hydrocarbyl group with 1-31 carbon atoms, and X is a ligand with a hydrolysable M-X bond or clusters thereof with appropriate ligand rearrangements.
15. The method of claim 14 wherein R comprises a blend of distinct hydrocarbyl groups.
16. The method of claim 1 further comprising forming the radiation exposed organometallic patterning layer by a method comprising:
coating a substrate with an organometallic radiation sensitive organometallic resist material to form a radiation sensitive organometallic resist layer on a surface of a substrate and
exposing the radiation sensitive organometallic resist layer to extreme ultraviolet radiation using a patterned mask to form the radiation exposed organometallic patterning layer comprising exposed portions and unexposed portions.
17. The method of claim 16 wherein the exposing the radiation sensitive organometallic resist layer comprises irradiation with extreme ultraviolet radiation at a dose of no more than about 200 mJ/cm 2 or with an electron beam at a dose no more than about 2 mC/cm 2 at 30 kV.
18. The method of claim 1 wherein the contacting results in negative tone image formation.
19. The method of claim 1 wherein the developer composition further comprises a carboxylic acid.
20. The method of claim 1 wherein the alcohol is a monohydroxyl alcohol, a diol, or a combination thereof.