Semiconductor etching apparatus
A semiconductor etching apparatus includes: a backing ring, a supporting mechanism, an edge ring and a temperature control mechanism. The edge ring is arranged between the backing ring and the supporting mechanism. The temperature control mechanism includes a heating unit arranged below the edge ring. The temperature control mechanism further includes a temperature controller electrically connected with the heating unit.
1. A semiconductor etching apparatus, comprising: a backing ring; a supporting mechanism; an edge ring, arranged between the backing ring and the supporting mechanism; a temperature control mechanism, comprising a heating unit arranged below the edge ring; wherein, the temperature control mechanism further comprises a temperature controller electrically connected with the heating unit; and a moving mechanism; wherein the moving mechanism is located directly below the edge ring, and is configured to drive the edge ring to move between a first position and a second position relative to the supporting mechanism under a preset condition; when the edge ring is in the first position, a first surface of the edge ring is coplanar to a top surface of the backing ring and/or a surface of the supporting mechanism; when the edge ring is in the second position, the first surface of the edge ring is lower than the top surface of the backing ring and/or the surface of the supporting mechanism.
2. The semiconductor etching apparatus according to claim 1 , wherein the heating unit is arranged directly below the edge ring.
3. The semiconductor etching apparatus according to claim 1 , wherein the heating unit is configured in a form of:
a plurality of heating units arranged at intervals.
4. The semiconductor etching apparatus according to claim 1 , wherein the heating unit is arranged on a top surface of the moving mechanism.
5. The semiconductor etching apparatus according to claim 1 , wherein a chamber is arranged within the backing ring, the supporting mechanism and the edge ring; when the edge ring is in the second position, the edge ring is located in the chamber.
6. The semiconductor etching apparatus according to claim 5 , wherein the supporting mechanism comprises a supporting unit;
the semiconductor etching apparatus further comprises a cleaning mechanism; a gas outlet of the cleaning mechanism is arranged on a peripheral wall of the supporting unit;
when the edge ring is in the second position, the first surface of the edge ring is adapted to the position of the gas outlet of the cleaning mechanism.
7. The semiconductor etching apparatus according to claim 6 , wherein when the edge ring is in the second position, the first surface of the edge ring is located below the gas outlet of the cleaning mechanism.
8. The semiconductor etching apparatus according to claim 7 , wherein the gas outlet of the cleaning mechanism is configured in
a form of a ring-shaped gas outlet, arranged along the peripheral wall of the supporting unit.
9. The semiconductor etching apparatus according to claim 8 , wherein the cleaning mechanism further comprises a first driving device; the first driving device communicates with the gas outlet by a gas supply passage.
10. The semiconductor etching apparatus according to claim 6 , wherein the semiconductor etching apparatus further comprises a suction mechanism; a suction port of the suction mechanism is arranged on an inner peripheral wall of the backing ring.
11. The semiconductor etching apparatus according to claim 10 , wherein when the edge ring is in the second position, the suction port of the suction mechanism is located below the first surface of the edge ring.
12. The semiconductor etching apparatus according to claim 11 , wherein the suction port of the suction mechanism is configured in
a form of a ring-shaped suction port, arranged along the inner peripheral wall of the backing ring.
13. The semiconductor etching apparatus according to claim 11 , wherein the suction mechanism further comprises a second driving device; the second driving device communicates with the suction port of the suction mechanism by a suction passage.
14. The semiconductor etching apparatus according to claim 5 , wherein the temperature controller is arranged in the chamber, and an insulating mechanism is sleeved on an outer periphery of the temperature controller.
15. The semiconductor etching apparatus according to claim 6 , wherein the supporting mechanism further comprises an electronic-static clamp; the electronic-static clamp is arranged on the supporting unit.