Titanium complex, method for producing same, and method for producing titanium-containing thin film
A titanium complex useful for producing a titanium-containing thin film under low temperature deposition conditions without using an oxidative gas is provided. A titanium complex represented by the general formula (1) (wherein each of R 1 and R 2 is independently a C 1-6 alkyl group which may be bonded with each other to form a ring, X is CR 3 or a N atom, Y is CR 4 or a N atom, Z is CR 5 or a N atom, each of R 3 , R 4 and R 5 is independently a hydrogen atom or a C 1-6 alkyl group, and n is an integer of from 1 to 3).
1. A titanium complex represented by the general formula (1):
wherein each of R 1 and R 2 is independently a C 1-6 alkyl group which may be bonded with each other to form a ring, X is CR 3 or a N atom, Y is CR 4 or a N atom, Z is CR 5 or a N atom, each of R 3 , R 4 and R 5 is independently a hydrogen atom or a C 1-6 alkyl group, and n is an integer of from 1 to 3.
2. The titanium complex according to claim 1 , wherein each of R 1 and R 2 is independently a C 1-4 alkyl group, each of R 3 , R 4 and R 5 is independently a hydrogen atom or a C 1-4 alkyl group, and n is 2 or 3.
3. The titanium complex according to claim 1 , wherein each of R 1 and R 2 is independently a methyl group or an ethyl group, each of R 3 , R 4 and R 5 is independently a hydrogen atom or a methyl group, and n is 3.
4. A method for producing the titanium complex as defined in claim 1 , which comprises reacting an amide complex represented by the general formula (2):
wherein each of R 1 and R 2 is independently a C 1-6 alkyl group which may be bonded with each other to form a ring, with an unsaturated cyclic amine represented by the general formula (3):
wherein X is CR 3 or a N atom, Y is CR 4 or a N atom, Z is CR 5 or a N atom, each of R 3 , R 4 and R 5 is independently a hydrogen atom or a C 1-6 alkyl group.
5. A method for producing a titanium-containing thin film, which comprises depositing the titanium-containing thin film by decomposing a vaporized titanium complex represented by the general formula (1) on a substrate:
wherein each of R 1 and R 2 is independently a C 1-6 alkyl group which may be bonded with each other to form a ring, X is CR 3 or a N atom, Y is CR 4 or a N atom, Z is CR 5 or a N atom, each of R 3 , R 4 and R 5 is independently a hydrogen atom or a C 1-6 alkyl group, and n is an integer of from 1 to 3.
6. The method according to claim 5 , wherein depositing the titanium-containing thin film is chemical vapor deposition.
7. The method according to claim 5 , wherein decomposing the vaporized titanium complex represented by the general formula (1) comprises reacting the vaporized titanium complex represented by the general formula (1) with a reactant gas.
8. The method according to claim 7 , wherein the reactant gas is a reductive gas.
9. The method according to claim 5 , wherein the titanium-containing thin film is a titanium nitride thin film.