Transistor structure with air gap and method of fabricating the same
A transistor structure with an air gap includes a substrate. A transistor is disposed on the substrate. An etching stop layer covers and contacts the transistor and the substrate. A first dielectric layer covers and contacts the etching stop layer. A second dielectric layer covers the first dielectric layer. A trench is disposed on the gate structure and within the first dielectric layer and the second dielectric layer. A width of the trench within the second dielectric layer is smaller than a width of the trench within the first dielectric layer. A filling layer is disposed within the trench and covers the top surface of the second dielectric layer. An air gap is formed within the filling layer.
1. A transistor structure with an air gap, comprising:
a substrate;
a transistor disposed on the substrate, wherein the transistor comprises:
a gate structure disposed on the substrate; and
a source doping region and a drain doping region respectively embedded in the substrate at two side of the gate structure;
an etching stop layer covering and contacting the transistor and the substrate, wherein the etching stop layer is a single material layer;
a first dielectric layer covering and contacting the etching stop layer;
a second dielectric layer covering the first dielectric layer;
a trench disposed on the gate structure and within the first dielectric layer and the second dielectric layer, wherein a sidewall of the trench and a top surface of the second dielectric layer form a first corner, and another sidewall of the trench and the top surface of the second dielectric layer form a second corner;
a filling layer disposed within the trench and covering a top surface of the second dielectric layer, wherein the filling layer bulges out around the first corner and the second corner to form two overhangs, the filling layer shrinks gradually from the two overhangs toward the bottom of the trench, and the two overhangs contact each other; and
an air gap disposed within the filling layer, wherein the etching stop layer serves as a bottom of the air gap, and the air gap and the gate structure are separate from each other only by the etching stop layer.
2. The transistor structure with the air gap of claim 1 , wherein a width of the air gap which is closer to the gate structure is greater than a width of the air gap which is farther from the gate structure.
3. The transistor structure with the air gap of claim 1 , wherein the air gap is in a shape of a bell, a droplet or a triangle.
4. The transistor structure with the air gap of claim 1 , wherein a thickness of the filling layer at the bottom of the trench is smaller than a thickness of the filling layer at the first corner.
5. The transistor structure with the air gap of claim 1 , wherein the first dielectric layer and the second dielectric layer are made of different materials.
6. The transistor structure with the air gap of claim 1 , further comprising:
a first contact plug disposed within the first dielectric layer and contacting the source doping region;
a second contact plug disposed within the first dielectric layer and contacting the drain doping region;
a first metal layer disposed within the second dielectric layer and contacting the first contact plug; and
a second metal layer disposed within the second dielectric layer and contacting the second contact plug.
7. The transistor structure with the air gap of claim 6 , wherein the air gap is disposed between the first contact plug and the second contact plug, and the air gap is disposed directly on the gate structure.
8. The transistor structure with the air gap of claim 6 , wherein a first shortest distance is disposed between the first contact plug and the second contact plug along a horizontal direction, a second shortest distance is disposed between the first metal layer and the second metal layer along the horizontal direction, the second shortest distance is smaller than the first shortest distance, and the horizontal direction is parallel to a top surface of the substrate.
9. The transistor structure with the air gap of claim 8 , wherein the width of the trench within the second dielectric layer is smaller than the second shortest distance, and the width of the trench within the first dielectric layer is smaller than the first shortest distance.