Acoustic wave device and ladder filter
In an acoustic wave device, a piezoelectric layer is provided directly or indirectly on a support substrate, an IDT electrode is provided on the piezoelectric layer, an overlap region includes a middle region and first and second edge regions, and first and second conductive layers are provided on a second main surface of the piezoelectric layer to overlap at least some portions of the first and second edge regions in plan view and at least some portions of first and second busbars in plan view.
1. An acoustic wave device comprising:
a support substrate;
a piezoelectric layer provided directly or indirectly on the support substrate, the piezoelectric layer including a first main surface and a second main surface that face away from each other, the second main surface being closer to the support substrate; and
an IDT electrode provided on the first main surface of the piezoelectric layer; wherein
the IDT electrode includes a first comb electrode including a plurality of first electrode fingers and a first busbar and a second comb electrode including a plurality of second electrode fingers interdigitated with the plurality of first electrode fingers and a second busbar, a region in which the first electrode fingers and the second electrode fingers overlap each other in a direction perpendicular or substantially perpendicular the first electrode fingers and the second electrode fingers is an overlap region, the overlap region includes a middle region located centrally in a direction in which the first electrode fingers and the second electrode fingers extend, a first edge region located on an outer side of the middle region in the direction in which the first electrode fingers and the second electrode fingers extend, the first edge region being closer to the first busbar, and a second edge region located on the outer side of the middle region in the direction in which the first electrode fingers and the second electrode fingers extend, the second edge region being closer to the second busbar, a first gap region is present between the first busbar and the first edge region, a second gap region is present between the second busbar and the second edge region, and the acoustic wave device further includes a conductive layer that is provided on the second main surface of the piezoelectric layer to overlap at least some portions of the first and second edge regions in plan view and at least some portions of the first and second busbars in plan view.
2. The acoustic wave device according to claim 1 , wherein the conductive layer includes a first conductive layer including a portion that overlaps at least a portion of the first busbar and a portion that overlaps the first edge region and a second conductive layer including a portion that overlaps at least a portion of the second busbar and a portion that overlaps the second edge region.
3. The acoustic wave device according to claim 2 , wherein the first conductive layer further includes a portion that overlaps the second edge region, and the second conductive layer further includes a portion that overlaps the first edge region.
4. The acoustic wave device according to claim 2 , wherein the first conductive layer further includes a portion that overlaps the first gap region in plan view, and the second conductive layer further includes a portion that overlaps the second gap region in plan view.
5. The acoustic wave device according to claim 1 , wherein the conductive layer is electrically connected to at least one of the first busbar and the second busbar.
6. The acoustic wave device according to claim 1 , wherein the conductive layer is not electrically connected to the first busbar and the second busbar.
7. The acoustic wave device according to claim 1 , further comprising:
an intermediate layer between the piezoelectric layer and the support substrate.
8. The acoustic wave device according to claim 1 , wherein the conductive layer is provided on the second main surface of the piezoelectric layer.
9. The acoustic wave device according to claim 7 , wherein the conductive layer is provided either within the intermediate layer or on an interface between the intermediate layer and the support substrate.
10. The acoustic wave device according to claim 9 , wherein the intermediate layer includes a low-acoustic-velocity film made of a low-acoustic-velocity material through which a bulk wave propagates at an acoustic velocity lower than an acoustic velocity at which a bulk wave propagates through the piezoelectric layer.
11. The acoustic wave device according to claim 10 , wherein the support substrate includes a Si substrate and a high-acoustic-velocity film made of a high-acoustic-velocity material through which a bulk wave propagates at an acoustic velocity higher than an acoustic velocity at which an acoustic wave propagates through the piezoelectric layer.
12. A ladder filter comprising:
at least one series arm resonator; and
at least one parallel arm resonator; wherein
at least one of the at least one series arm resonator includes the acoustic wave device according to claim 1 .
13. The ladder filter according to claim 12 , wherein the conductive layer includes a first conductive layer including a portion that overlaps at least a portion of the first busbar and a portion that overlaps the first edge region and a second conductive layer including a portion that overlaps at least a portion of the second busbar and a portion that overlaps the second edge region.
14. The ladder filter according to claim 13 , wherein the first conductive layer further includes a portion that overlaps the second edge region, and the second conductive layer further includes a portion that overlaps the first edge region.
15. The ladder filter according to claim 13 , wherein the first conductive layer further includes a portion that overlaps the first gap region in plan view, and the second conductive layer further includes a portion that overlaps the second gap region in plan view.
16. The ladder filter according to claim 12 , wherein the conductive layer is electrically connected to at least one of the first busbar and the second busbar.
17. The ladder filter according to claim 12 , wherein the conductive layer is not electrically connected to the first busbar and the second busbar.
18. The ladder filter according to claim 12 , further comprising:
an intermediate layer between the piezoelectric layer and the support substrate.
19. The ladder filter according to claim 12 , wherein the conductive layer is provided on the second main surface of the piezoelectric layer.
20. A ladder filter comprising:
a plurality of series arm resonators; and
at least one parallel arm resonator; wherein
a series arm resonator including a lowest resonant frequency among the plurality of series arm resonators includes the acoustic wave device according to claim 1 .