Power semiconductor device and method of producing a power semiconductor device
A method of producing a power semiconductor device includes: providing a semiconductor body; forming, at the semiconductor body, a polycrystalline semiconductor region; forming, at the polycrystalline semiconductor region, an amorphous sublayer; subjecting the amorphous sublayer to a re-crystallization processing step to form a re-crystallized sublayer; and forming a metal layer at the re-crystallized sublayer.
1. A method of producing a power semiconductor device, the method comprising:
providing a semiconductor body;
forming, at the semiconductor body, a polycrystalline semiconductor region, wherein forming the polycrystalline semiconductor region includes a structuring step during which a lateral structuration of the polycrystalline semiconductor region is performed to form a laterally structured polycrystalline semiconductor region;
forming, at the polycrystalline semiconductor region, an amorphous sublayer, wherein forming the amorphous sublayer includes a damage implantation processing step, wherein the damage implantation processing step is carried out as an unmasked implantation to form a doped semiconductor region in the semiconductor body adjacent to the laterally structured polycrystalline semiconductor region;
subjecting the amorphous sublayer to a re-crystallization processing step to form a re-crystallized sublayer; and
forming a metal layer at the re-crystallized sublayer.
2. The method of claim 1 , wherein the damage implantation processing step includes implanting heavy ions.
3. The method of claim 2 , wherein the heavy ions have a mass equal to or greater than the mass of phosphorus ions.
4. The method of claim 2 , wherein the heavy ions include one or more of argon, boron, neon, arsenic, boron-difluoride, and trihydridoboron.
5. The method of claim 1 , wherein a dose applied during the damage implantation processing step is greater than 1*10 13 cm −2 and/or wherein an energy applied during the damage implantation processing step is greater than 15 keV.
6. The method of claim 1 , wherein the polycrystalline semiconductor region is formed as a laterally unstructured layer, and wherein the damage implantation processing step is carried out as an unmasked implantation.
7. The method of claim 1 , further comprising a dopant implantation step being separate from the damage implantation processing step.
8. The method of claim 7 , wherein species implanted during the damage implantation processing step are non-doping.
9. The method of claim 7 , wherein the dopant implantation step is carried out after the re-crystallization processing step.
10. The method of claim 7 , wherein the dopant implantation step is carried out prior to the damage implantation processing step.
11. The method of claim 1 , wherein forming the amorphous sublayer includes a deposition processing step or an amorphization processing step.
12. The method of claim 1 , wherein the re-crystallization processing step includes a temperature annealing processing step.
13. The method of claim 1 , wherein the polycrystalline semiconductor region is based on silicon.
14. The method of claim 1 , wherein the metal layer comprises Al, Cu, AlSi, AlSiCu, or AlCu.
15. The method of claim 1 , further comprising:
forming a first insulation layer at the semiconductor body, wherein during the forming of the polycrystalline semiconductor region, the polycrystalline semiconductor region is formed at least partly above the first insulation layer; and/or
forming a second insulation layer at the re-crystallized sublayer, wherein during the forming of the metal layer, the metal layer is formed at least partly above the second insulation layer.
16. A method of producing a power semiconductor device, the method comprising:
providing a semiconductor body;
forming, at the semiconductor body, a polycrystalline semiconductor region;
forming, at the polycrystalline semiconductor region, an amorphous sublayer, wherein forming the amorphous sublayer includes a damage implantation processing step;
subjecting the amorphous sublayer to a re-crystallization processing step to form a re-crystallized sublayer;
performing a dopant implantation step separate from the damage implantation processing step, wherein the dopant implantation step is carried out after the re-crystallization processing step; and
forming a metal layer at the re-crystallized sublayer.
17. A method of producing a power semiconductor device, the method comprising:
providing a semiconductor body;
forming, at the semiconductor body, a polycrystalline semiconductor region;
forming, at the polycrystalline semiconductor region, an amorphous sublayer;
subjecting the amorphous sublayer to a re-crystallization processing step to form a re-crystallized sublayer;
forming a metal layer at the re-crystallized sublayer; and
at least one of:
forming a first insulation layer at the semiconductor body, wherein during the forming of the polycrystalline semiconductor region, the polycrystalline semiconductor region is formed at least partly above the first insulation layer; and
forming a second insulation layer at the re-crystallized sublayer, wherein during the forming of the metal layer, the metal layer is formed at least partly above the second insulation layer.