IP Library › Granted Patent US 12,426,387
Granted Patent B2
US 12,426,387 · App. 18/049,424 · Granted Sep 23, 2025

Atomic layer-based surface treatments for infrared detectors

Inventors: Cory J. Hill (Chesterfield, MO); Harold Frank Greer (Los Angeles, CA)
Assignee: California Institute of Technology
H10F39/028H10F39/021H10F39/184
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Quick Facts
Patent No.
US 12,426,387
App. No.
18/049,424
Granted
Sep 23, 2025
Kind
B2
Abstract

Disclosed herein is a method of producing an infrared detector. In certain embodiments, the method includes: forming a planar multi-layer structure including an absorber including a superlattice structure; patterning the planar multi-layer structure; etching the planar multi-layer structure to define a plurality of pixels, the sidewalls of the plurality of pixels includes a sidewall roughness and multiple types of surface oxides; and performing a surface treatment process to the plurality of pixels in order to reduce the sidewall roughness and replace the surface oxides with a chlorinated surface morphology. The surface treatment process may reduce surface current of the infrared detector which may decrease the dark current in the infrared detector.

Claims (27)

1. A method of producing an infrared detector, the method comprising:

forming a planar multi-layer structure comprising an absorber including a superlattice structure;

patterning the planar multi-layer structure;

etching the planar multi-layer structure to define a plurality of pixels, wherein sidewalls of the plurality of pixels include multiple types of surface oxides; and

performing a surface treatment process to the plurality of pixels in order to replace the surface oxides with a chlorinated surface morphology; wherein the surface treatment process comprises a first atomic layer etching process followed by a second atomic layer deposition process.

2. The method of claim 1 , wherein the planar multi-layer structure further comprises a unipolar barrier layer and a contact layer.

3. The method of claim 2 , wherein the contact layer comprises a superlattice structure.

4. The method of claim 3 , wherein the superlattice structure of the contact layer comprises a compound semiconductor.

5. The method of claim 4 , wherein the compound semiconductor comprises InAs and InAsSb.

6. The method of claim 5 , wherein the multiple types of surface oxides include indium oxide, arsenic oxide, and antimony oxide.

7. The method of claim 1 , wherein the superlattice structure of the absorber comprises a compound semiconductor.

8. The method of claim 7 , wherein the compound semiconductor comprises InAs and InAsSb.

9. The method of claim 8 , wherein the multiple types of surface oxides include indium oxide, arsenic oxide, and antimony oxide.

10. The method of claim 1 , wherein the first atomic layer etching process comprises cyclically and alternately:

exposing the sidewalls of the plurality of pixels to a fluorocarbon reactant; and

exposing the sidewalls of the plurality of pixels to an ionized argon gas.

11. The method of claim 10 , wherein the fluorocarbon reactant is CHF 3 gas.

12. The method of claim 10 , wherein exposing the sidewalls of the plurality of pixels to the fluorocarbon reactant is between 20-80 seconds.

13. The method of claim 10 , wherein exposing the sidewalls to the fluorocarbon reactant is performed with substantially no bias.

14. The method of claim 10 , exposing the sidewalls to the ionized argon gas includes exposing the sidewalls to argon gas with a bias.

15. The method of claim 14 , wherein the bias applied to the ionized argon gas is higher than a bias applied when exposing the sidewalls to the fluorocarbon reactant.

16. The method of claim 1 , wherein the second atomic layer deposition process comprises cyclically and alternately:

exposing the sidewalls of the plurality of pixels to a chlorine reactant; and

exposing the sidewalls of the plurality of pixels to an ionized argon gas.

17. The method of claim 16 , wherein the chlorine reactant comprises chlorine argon plasma.

18. The method of claim 16 , wherein exposing the sidewalls to the chlorine reactant and/or the ionized argon gas is less than 100 ms.

19. The method of claim 16 , wherein the second atomic layer deposition process treats the sidewalls with a chlorinated III-V compound.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2023
From: HILL, CORY J.; GREER, HAROLD FRANK
To: CALIFORNIA INSTITUTE OF TECHNOLOGY
Reel/Frame 065282/0528 →
Continuity (2)
Provisional Application 63271531 · Oct 25, 2021
Related Publication 20230129191A1 · Apr 27, 2023
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