One-dimensional metallization for solar cells
Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.
1. A solar cell, comprising:
a substrate having a back surface and an opposing light-receiving surface;
a plurality of alternating N-type and P-type semiconductor regions in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell; and
a conductive contact structure on the plurality of alternating N-type and P-type semiconductor regions, the conductive contact structure comprising a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell, wherein the plurality of metal lines terminates in a staggered fashion at first and second ends of the substrate, and wherein the staggered fashion comprises alternating long terminations along the first direction relative to short terminations along the first direction for neighboring ones of the plurality of metal lines, and wherein the lines that have long terminations are discontinuous from one another, and the lines that have short terminations are discontinuous from one another, and wherein the staggered fashion conforms to angled corners of the substrate including alternating long terminations along the first direction relative to short terminations along the first direction for neighboring ones of the plurality of metal lines along the angled corners, wherein a portion of the staggered fashion that conforms to an angled corner of the substrate includes a metal line that is between and has an end that is orthogonal to the first direction and extends beyond two immediately neighboring metal lines, and wherein a first one of the two immediately neighboring metal lines has an end that is orthogonal to the first direction and extends beyond a second one of the two immediately neighboring metal lines.
2. The solar cell of claim 1 , wherein the conductive contact structure further comprises a metal seed layer between the plurality of alternating N-type and P-type semiconductor regions and the plurality of metal lines.
3. The solar cell of claim 1 , wherein the substrate is a monocrystalline silicon substrate, and wherein the plurality of alternating N-type and P-type semiconductor regions is a plurality of N-type and P-type diffusion regions formed in the silicon substrate.
4. The solar cell of claim 1 , wherein the plurality of alternating N-type and P-type semiconductor regions is a plurality of N-type and P-type polycrystalline silicon regions formed above the back surface of the substrate.
5. The solar cell of claim 1 , wherein the plurality of alternating N-type and P-type semiconductor regions are in the substrate.
6. The solar cell of claim 1 , wherein the plurality of alternating N-type and P-type semiconductor regions are above the substrate.
7. A solar cell, comprising:
a substrate having a back surface and an opposing light-receiving surface;
a plurality of semiconductor regions in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell; and
a conductive contact structure on the plurality of semiconductor regions, the conductive contact structure comprising a plurality of metal lines corresponding to the plurality of semiconductor regions parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell, wherein the plurality of metal lines terminates in a staggered fashion at first and second ends of the substrate, and wherein the staggered fashion comprises alternating long terminations along the first direction relative to short terminations along the first direction for neighboring ones of the plurality of metal lines, and wherein the lines that have long terminations are discontinuous from one another, and the lines that have short terminations are discontinuous from one another, and wherein the staggered fashion conforms to angled corners of the substrate including alternating long terminations along the first direction relative to short terminations along the first direction for neighboring ones of the plurality of metal lines along the angled corners, wherein a portion of the staggered fashion that conforms to an angled corner of the substrate includes a metal line that is between and has an end that is orthogonal to the first direction and extends beyond two immediately neighboring metal lines, and wherein a first one of the two immediately neighboring metal lines has an end that is orthogonal to the first direction and extends beyond a second one of the two immediately neighboring metal lines.
8. The solar cell of claim 7 , wherein the conductive contact structure further comprises a metal seed layer between the plurality of semiconductor regions and the plurality of metal lines.
9. The solar cell of claim 7 , wherein the substrate is a monocrystalline silicon substrate, and wherein the plurality of semiconductor regions is a plurality of diffusion regions formed in the silicon substrate.
10. The solar cell of claim 7 , wherein the plurality of semiconductor regions is a plurality of polycrystalline silicon regions formed above the back surface of the substrate.
11. The solar cell of claim 7 , wherein the plurality of semiconductor regions are in the substrate.
12. The solar cell of claim 7 , wherein the plurality of semiconductor regions are above the substrate.
13. A solar cell, comprising:
a plurality of semiconductor regions in or above a substrate, the substrate comprising a first end and a second end; and
a conductive contact structure comprising a first plurality of metal lines and a second plurality of metal lines on the plurality of semiconductor regions, wherein the first plurality of metal lines and the second plurality of metal lines terminate in a staggered fashion at the first and second ends of the substrate, and wherein the staggered fashion comprises alternating long terminations of the first plurality of metal lines along a first direction relative to short terminations of the second plurality of metal lines along the first direction for neighboring ones of the first and second pluralities of metal lines, and wherein the metal lines of the first plurality of metal lines that have long terminations are discontinuous from one another, and the metal lines of the second plurality of metal lines that have short terminations are discontinuous from one another, and wherein the staggered fashion conforms to angled corners of the substrate including alternating long terminations of the first plurality of metal lines along the first direction relative to short terminations of the second plurality of metal lines along the first direction for neighboring ones of the first and second pluralities of metal lines along the angled corners, wherein a portion of the staggered fashion that conforms to an angled corner of the substrate includes a metal line that is between and has an end that is orthogonal to the first direction and extends beyond two immediately neighboring metal lines, and wherein a first one of the two immediately neighboring metal lines has an end that is orthogonal to the first direction and extends beyond a second one of the two immediately neighboring metal lines.
14. The solar cell of claim 13 , wherein the conductive contact structure further comprises a metal seed layer between the plurality of semiconductor regions and the first and second plurality of metal lines.
15. The solar cell of claim 13 , wherein each of the first and second plurality of metal lines comprises a metal foil.
16. The solar cell of claim 13 , wherein the second end includes a chamfered corner.
17. The solar cell of claim 13 , wherein the second end connects two opposing top-to-bottom edges that extend in a length direction of the solar cell.
18. The solar cell of claim 13 , wherein the plurality of semiconductor regions are in the substrate.
19. The solar cell of claim 13 , wherein the plurality of semiconductor regions are above the substrate.