Structure of the photodiode
The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio between 1:0.5 and 1:1.5. The photoactive layer has a thickness ranging from 1 μm to 15 m, the photoactive layer has a first energy gap value, and a second electrode is disposed on the photoactive layer.
1. A structure of photodiode, converting an external light source to a current value, comprising:
a substrate;
a first electrode, disposed on said substrate;
a first transport layer, disposed on said first electrode;
a photoactive layer, disposed on said first transport layer, and comprises a P-type semiconductor layer and an N-type semiconductor layer, the composition ratio of the P-type semiconductor layer and the N-type semiconductor layer is between 1:0.5 and 1:1.5, the thickness of the photoactive layer is between 1 μm and 15 μm;
a second electrode, disposed on said photoactive layer;
wherein the structure of photodiode is formed by adjusting the composition ratio of the P-type semiconductor layer and the N-type semiconductor layer and the thickness of the photoactive layer to attain a structure for light absorption changed from a full-wavelength absorption to a partial-wavelength absorption without using filter.
2. The structure of photodiode of claim 1 , wherein said substrate is selected from silicon substrate, polyimide substrate, glass substrate, polyethylene naphthalate substrate, polyethylene terephthalate substrate, sapphire substrate, quartz substrate, or ceramic substrate.
3. The structure of photodiode of claim 1 , wherein said first electrode is a transparent electrode or a metal electrode, wherein said transparent electrode is selected from the group consisting of metal oxide, conductive polymer, graphene, carbon nanotube, metal nanowire and metal mesh and the mixture thereof; and said metal electrode is selected from the group consisting of aluminum, silver, gold, copper, tungsten, molybdenum, titanium and the mixture thereof.
4. The structure of photodiode of claim 1 , wherein the first electrode further comprises a first active metal layer arranged in the first electrode, and the material of the first active metal layer is selected from a group composed of magnesium, calcium, lithium, caesium, and their constituents.
5. The structure of photodiode of claim 1 , wherein said first transport layer is selected from the group consisting of one or more of the following materials: organic polymer, organic small molecule, and metal oxide, wherein the organic polymer is selected from PFN-DOF PFN-Br, or PDMAEMA; the organic small molecule is selected from PDIN PDINO PDINN, or NDI-N; the metal oxide is selected from SnO 2 ZnO TiO 2 Cs 2 CO 3 , or Nb 2 O 5 .
6. The structure of photodiode of claim 1 , further comprising a second transport layer disposed between said photoactive layer and said second electrode.
7. The structure of photodiode of claim 6 , wherein the second transport layer is selected from a group composed of one or more of the following materials: organic polymer, organic small molecule, metal oxide, and metal compound; the organic polymer is selected from PEDOT:PSS or PTAA; the organic small molecule is selected from spiro-MeOTAD or m-MTDATA; the metal oxide or the metal compound is selected from MoO 3 NiO V 2 O 5 WO 3 , or CuSCN.
8. The structure of photodiode of claim 1 , wherein the second electrode is a transparent electrode or a metal electrode, wherein said transparent electrode is selected from the group consisting of metal oxide, conductive polymer, graphene, carbon nanotube, metal nanowire and metal mesh and the mixture thereof; and said metal electrode is selected from the group consisting of aluminum, silver, gold, copper, tungsten, molybdenum, titanium and the mixture thereof.
9. The structure of photodiode of claim 1 , wherein the second electrode further comprises a second active metal layer arranged in the second electrode, and the material of the second active metal layer is selected from a group composed of magnesium, calcium, lithium, caesium, and their constituents.
10. The structure of photodiode of claim 1 , wherein the structure of the P-type semiconductor layer of the photoactive layer is selected from a group composed of D1-D29
11. The structure of photodiode of claim 1 , wherein the structure of the N-type semiconductor layer of the photoactive layer is selected from a group composed of A1-A3