Tunable in-pool waveguide and method
A photonics integrated circuit includes a first waveguide and a second waveguide. A portion of the first waveguide has a first cladding with a first refractive index. The second waveguide includes a second cladding with a second refractive index different from the first refractive index. Also disclosed is a test circuit for a photonics integrated circuit. The test circuit can be used to determine waveguide losses, and used to tune the waveguide losses.
1. A photonic integrated circuit comprising: a first waveguide, a portion of the first waveguide having a first cladding with a first refractive index; a second waveguide having a second cladding with a second refractive index different from the first refractive index, wherein the first cladding is not on or over any portion of the second waveguide; a heater, wherein at least part of the heater is recessed into a top of the first cladding, and wherein the heater comprises a liner material on bottom and sidewalls of a recess in the first cladding, and electrodes in contact with the liner material.
2. The photonic integrated circuit of claim 1 , wherein both of the first cladding and the second cladding comprise silicon and oxygen.
3. The photonic integrated circuit of claim 1 , wherein the first cladding comprises a material exhibiting photoinduced refractive index increase.
4. The photonic integrated circuit of claim 1 , wherein the liner comprises titanium and nitrogen and the electrodes comprise aluminum.
5. The photonic integrated circuit of claim 1 , further comprising a multimode coupler coupled to the first waveguide and to the second waveguide.
6. The photonic integrated circuit of claim 1 , further comprising:
a first photodetector coupled to the first waveguide, the first photodetector comprising a Group III-V semiconductor material; and
a second photodetector coupled to the second waveguide, the second photodetector comprising a Group III-V semiconductor material.
7. The photonic integrated circuit of claim 1 , wherein the first waveguide and the second waveguide are part of a first semiconductor layer, the photonic integrated circuit further comprising an oxide layer and a base semiconductor layer wherein the oxide layer is between the base semiconductor layer and the first semiconductor layer.
8. The photonic integrated circuit of claim 7 , wherein the first semiconductor layer comprises single crystal silicon, the oxide layer comprises silicon and oxygen, and the base semiconductor layer comprises silicon.
9. The photonic integrated circuit of claim 1 , further comprising a third waveguide having a third cladding material directly on the third waveguide, wherein the third cladding material is adjacent to the second cladding material.
10. A photonic integrated circuit comprising: a base of semiconductor material; an oxide material; a layer of semiconductor material on the oxide layer such that the oxide layer is between the base and the layer of semiconductor material, the layer of semiconductor material defining a plurality of waveguides including (i) a first waveguide, a portion of the first waveguide having a first cladding material directly on the first waveguide and having a first refractive index, and (ii) a second waveguide having a second cladding material directly on the second waveguide and having a second refractive index different from the first refractive index; a heater on the first cladding material, wherein at least part of the heater is recessed into a top of the first cladding material, and wherein the heater comprises a liner material on bottom and sidewalls of a recess in the first cladding, and electrodes in contact with the liner material.
11. The photonic integrated circuit of claim 10 , wherein the layer of semiconductor material comprises monocrystalline silicon.
12. The photonic integrated circuit of claim 10 , further comprising a multimode coupler coupled to the first waveguide and to the second waveguide.
13. The photonic integrated circuit of claim 10 , further comprising:
a first photodetector coupled to the first waveguide, the first photodetector comprising a Group III-V semiconductor material; and
a second photodetector coupled to the second waveguide, the second photodetector comprising a Group III-V semiconductor material.
14. The photonic integrated circuit of claim 10 , wherein the plurality of waveguides further include a third waveguide having a third cladding material directly on the third waveguide, wherein the third cladding material is adjacent to the second cladding material.
15. A photonic integrated circuit comprising: a first waveguide, wherein a first portion of the first waveguide has a first cladding with a first refractive index and a second portion of the first waveguide has a second cladding with a second refractive index different from the first refractive index; a second waveguide having the second cladding, wherein the first cladding is not on or over any portion of the second waveguide; a heater, wherein at least part of the heater is recessed into a top of the first cladding, and wherein the heater comprises a liner material on bottom and sidewalls of a recess in the first cladding, and electrodes in contact with the liner material.
16. The photonic integrated circuit of claim 15 , wherein the first portion of the first waveguide is sandwiched between a second portion of the first waveguide and a third portion of the first waveguide, wherein each of the second and third portions of the first waveguide have the second cladding.
17. The photonic integrated circuit of claim 15 , wherein both of the first cladding and the second cladding comprise silicon and oxygen.
18. The photonic integrated circuit of claim 15 , further comprising a multimode coupler coupled to the first waveguide and to the second waveguide.