Electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus
An electrophotographic photosensitive member includes an electroconductive support, a photosensitive layer, and a protection layer The protection layer comprises an electroconductive particle with has a surface containing a titanium oxide and a niobium atom. An atomic concentration ratio of the niobium atom to the titanium atom in the titanium oxide is 0.01 to 0.20, and the electroconductive particle is surface-treated with a compound having a silicon atom. A content ratio of the electroconductive particle in the protection layer is 5 vol % or more and less than 40 vol % with respect to a total volume of the protection layer, and relative concentrations of a plurality of atoms at a surface of the protection layer satisfy specific conditions, as determined by X-ray photoelectron spectroscopy.
1. An electrophotographic photosensitive member, comprising:
an electroconductive support;
a photosensitive layer; and
a protection layer, the protection layer comprising an electroconductive particle, the electroconductive particle having a surface comprising a titanium oxide containing a niobium atom;
an atomic concentration ratio of the niobium atom to the titanium atom in the titanium oxide being 0.04 to 0.20, and a niobium atom/titanium atom concentration ratio at an inside portion that is 5% of a maximum diameter of the particle from the surface of the particle being at least 2.0 times as high as a niobium atom/titanium atom concentration ratio at a center of the maximum particle diameter in energy-dispersive X-ray spectroscopy (EDS analysis) with a scanning transmission electron microscope (STEM); and
the electroconductive particle being surface-treated with a compound having a silicon atom, wherein
a content ratio of the electroconductive particle in the protection layer is 5 to less than 40 vol % with respect to a total volume of the protection layer, and
0 <d (Ti)≤2.0,
0 <d (Si)≤8.0, and
0.01 ≤d (Ti)/ d (Si)≤1.0
when at a surface of the protection layer, a total of a relative concentration d(C) of a carbon atom, a relative concentration d(O) of an oxygen atom, a relative concentration d(Ti) of the titanium atom, a relative concentration d(Nb) of the niobium atom, and a relative concentration d(Si) of the silicon atom is defined as 100.0 atomic %, as determined by X-ray photoelectron spectroscopy.
2. The electrophotographic photosensitive member according to claim 1 , wherein
11≤log A ≤14,
11≤log B ≤14, and
0≤log ( A/B )≤2.0
when A [Ω·cm] is a volume resistivity of the protection layer under an atmosphere at 23° C. and 50% RH and B [Ω·cm] is a volume resistivity of the protection layer under an atmosphere at 32.5° C. and 80% RH.
3. The electrophotographic photosensitive member according to claim 1 , wherein the electroconductive particle has a number-average particle diameter of 60 to 150 nm.
4. A process cartridge, comprising:
an electrophotographic photosensitive member; and
at least one unit selected from the group consisting of a charging unit, a developing unit and a cleaning unit;
the process cartridge integrally supporting the electrophotographic photosensitive member and the at least one unit, and being detachably attachable onto a main body of an electrophotographic apparatus;
the electrophotographic photosensitive member comprising an electroconductive support, a photosensitive layer and a protection layer;
the protection layer comprising an electroconductive particle, the electroconductive particle having a surface comprising a titanium oxide containing a niobium atom;
an atomic concentration ratio of the niobium atom to the titanium atom in the titanium oxide being 0.04 to 0.20, and a niobium atom/titanium atom concentration ratio at an inside portion that is 5% of a maximum diameter of the particle from the surface of the particle being at least 2.0 times as high as a niobium atom/titanium atom concentration ratio at a center of the maximum particle diameter in energy-dispersive X-ray spectroscopy (EDS analysis) with a scanning transmission electron microscope (STEM); and
the electroconductive particle being surface-treated with a compound having a silicon atom, wherein
a content ratio of the electroconductive particle in the protection layer is 5 to less than 40 vol % with respect to a total volume of the protection layer, and
0 <d (Ti)≤2.0,
0 <d (Si)≤8.0, and
0.01 ≤d (Ti)/ d (Si)≤1.0
when at a surface of the protection layer, a total of a relative concentration d(C) of a carbon atom, a relative concentration d(O) of an oxygen atom, a relative concentration d(Ti) of the titanium atom, a relative concentration d(Nb) of the niobium atom, and a relative concentration d(Si) of the silicon atom is defined as 100.0 atomic %, as determined by X-ray photoelectron spectroscopy.
5. An electrophotographic apparatus, comprising:
an electrophotographic photosensitive member;
a charging unit;
an exposing unit;
a developing unit; and
a transfer unit,
the electrophotographic photosensitive member comprising an electroconductive support, a photosensitive layer and a protection layer;
the protection layer comprising an electroconductive particle, the electroconductive particle having a surface comprising a titanium oxide containing a niobium atom;
an atomic concentration ratio of the niobium atom to the titanium atom in the titanium oxide being 0.04 to 0.20, and a niobium atom/titanium atom concentration ratio at an inside portion that is 5% of a maximum diameter of the particle from the surface of the particle being at least 2.0 times as high as a niobium atom/titanium atom concentration ratio at a center of the maximum particle diameter in energy-dispersive X-ray spectroscopy (EDS analysis) with a scanning transmission electron microscope (STEM); and
the electroconductive particle being surface-treated with a compound having a silicon atom, wherein
a content ratio of the electroconductive particle in the protection layer is 5 to less than 40 vol % with respect to a total volume of the protection layer, and
0 <d (Ti)≤2.0,
0 <d (Si)≤8.0, and
0.01 ≤d (Ti)/ d (Si)≤1.0
when at a surface of the protection layer, a total of a relative concentration d(C) of a carbon atom, a relative concentration d(O) of an oxygen atom, a relative concentration d(Ti) of the titanium atom, a relative concentration d(Nb) of the niobium atom, and a relative concentration d(Si) of the silicon atom is defined as 100.0 atomic %, as determined by X-ray photoelectron spectroscopy.