Self-assembled monolayer for selective deposition
Methods for selectively depositing a self-assembled monolayer (SAM) on metallic surfaces are disclosed. Some embodiments of the disclosure utilize phenanthroline or a phenanthroline derivative to form the self-assembled monolayer. Some embodiments selective form the self-assembled monolayer on tungsten or molybdenum. Some embodiments utilize the self-assembled monolayer to selectively deposit on dielectric surfaces over metallic surfaces.
1. A method of self-assembled monolayer (SAM) formation comprising:
exposing a substrate with an exposed metallic surface and an exposed non-metallic surface to a first precursor comprising phenanthroline or a phenanthroline derivative, and
depositing the self-assembled monolayer (SAM) on the exposed metallic surface, the SAM selectively forming on the metallic surface over the non-metallic surface.
2. The method of claim 1 , wherein the exposed metallic surface comprises one or more of copper (Cu), cobalt (Co), ruthenium (Ru), tungsten (W), or molybdenum (Mo).
3. The method of claim 2 , wherein the exposed metallic surface comprises one or more of tungsten (W), or molybdenum (Mo).
4. The method of claim 1 , wherein the phenanthroline derivative comprises symmetrically substitutions.
5. The method of claim 1 , wherein the phenanthroline derivative comprises two or more substitutions.
6. The method of claim 5 , wherein the phenanthroline derivative is substituted at the 4 and 7 carbons.
7. The method of claim 5 , wherein the phenanthroline derivative is substituted at the 5 and 6 carbons.
8. The method of claim 1 , wherein the phenanthroline derivative is substituted with at least one C 6 -C 10 alkyl group.
9. The method of claim 1 , wherein the phenanthroline derivative is substituted with at least one aryl group.