Semiconductor package including thermal interface material (TIM) layers on semiconductor chips
A semiconductor package is provided. The semiconductor package includes first and second semiconductor chips mounted on an interposer structure, an insulating filler covering sides of the first and second semiconductor chips, a first thermal interface material (TIM) layer arranged on the insulating filler, and second TIM layers arranged on the first and second semiconductor chips. The thermal conductivity of each of the second TIM layers is higher than that of the first TIM layer and the first TIM layer is between the second TIM layers.
1. A semiconductor package comprising:
a package substrate;
an interposer structure mounted on the package substrate;
a first semiconductor chip mounted on the interposer structure;
second semiconductor chips mounted on the interposer structure and adjacent to the first semiconductor chip;
an insulating filler disposed between the first and second semiconductor chips;
a first thermal interface material (TIM) layer arranged on the insulating filler;
second TIM layers arranged on the first and second semiconductor chips; and
a heat dissipation device contacting the first and second TIM layers,
wherein a thermal conductivity of each of the second TIM layers is higher than a thermal conductivity of the first TIM layer,
wherein the first TIM layer is disposed between the second TIM layers,
wherein the first TIM layer does not vertically overlap with either the first semiconductor chip or the second semiconductor chips,
wherein at least a portion of each of the second TIM layers vertically overlaps with the insulating filler,
wherein each of the second TIM layers comprises a liquid metal,
wherein one of the second TIM layers comprises:
a core layer; and
an oxide layer surrounding the core layer to cover an upper surface, a lower surface, and a side surface of the core layer, and
wherein the first TIM layer is disposed between the second TIM layers and includes a flat side surface facing one of the second TIM layers.
2. The semiconductor package of claim 1 , wherein the first TIM layer horizontally surrounds each of the second TIM layers.
3. The semiconductor package of claim 1 , wherein a thickness of each of the first and second TIM layers ranges from about 50 μm to about 200 μm.
4. The semiconductor package of claim 1 , wherein a thermal conductivity of each of the second TIM layers ranges from 20 W/m·K to 100 W/m·K.
5. The semiconductor package of claim 1 , wherein a thermal conductivity of each of the second TIM layers ranges from 5 times to 25 times a thermal conductivity of the first TIM layer.
6. The semiconductor package of claim 1 , wherein each of the second TIM layers comprises gallium indium tin (GaInSn).
7. The semiconductor package of claim 1 , wherein the insulating filler covers sides of the first and second semiconductor chips and is configured to be coplanar with top surfaces of the first and second semiconductor chips.
8. The semiconductor package of claim 1 , wherein the oxide layer comprises gallium oxide (Ga 2 O 3 ).
9. The semiconductor package of claim 1 , wherein the oxide layer attaches one semiconductor chip among the first and second semiconductor chips to the heat dissipation device.
10. The semiconductor package of claim 1 , wherein
the first thermal interface material (TIM) layer includes openings at least partially exposing top surfaces of the first and second semiconductor chips, respectively, and
the second TIM layers are disposed in the openings of the first TIM layer, respectively.
11. The semiconductor package of claim 1 , wherein, among the second TIM layers, a horizontal area of the second TIM layer overlapping the first semiconductor chip is equal to a horizontal area of the first semiconductor chip, and
wherein, among the second TIM layers, a horizontal area of each of the second TIM layers overlapping the second semiconductor chips is equal to the horizontal area of each of the second semiconductor chips.
12. The semiconductor package of claim 1 , wherein, among the second TIM layers, a horizontal area of the second TIM layer overlapping the first semiconductor chip is less than a horizontal area of the first semiconductor chip, and
wherein, among the second TIM layers, a horizontal area of each of the second TIM layers overlapping the second semiconductor chips is less than a horizontal area of each of the second semiconductor chips.
13. The semiconductor package of claim 1 , wherein, among the second TIM layers, a horizontal area of the second TIM layer overlapping the first semiconductor chip is greater than a horizontal area of the first semiconductor chip, and
wherein, among the second TIM layers, a horizontal area of each of the second TIM layers overlapping the second semiconductor chips is greater than a horizontal area of each of the second semiconductor chips.
14. The semiconductor package of claim 1 , wherein, among the second TIM layers, a horizontal area of the second TIM layer overlapping the first semiconductor chip is greater than a horizontal area of the first semiconductor chip, and
wherein, among the second TIM layers, a horizontal area of each of the second TIM layers overlapping the second semiconductor chips is less than a horizontal area of each of the second semiconductor chips.
15. The semiconductor package of claim 1 , wherein, among the second TIM layers, a horizontal area of the second TIM layer overlapping the first semiconductor chip is less than a horizontal area of the first semiconductor chip, and
wherein, among the second TIM layers, a horizontal area of each of the second TIM layers overlapping the second semiconductor chips is greater than a horizontal area of each of the second semiconductor chips.
16. The semiconductor package of claim 1 , further comprising another insulating filler disposed between the first and second semiconductor chips and the interposer structure.