IP Library Granted Patent US 12,436,634
Granted Patent B2
US 12,436,634 · App. 18/607,654 · Granted Oct 7, 2025

Display panel, display device, input/output device, and data processing device

Inventors: Hisao Ikeda (Kanagawa, JP); Masataka Nakada (Tochigi, JP); Tomoya Aoyama (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G06F3/0412H10K59/00H10K59/121H10K59/131H10K59/1315H10K59/80522
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,436,634
App. No.
18/607,654
Granted
Oct 7, 2025
Kind
B2
Abstract

A display panel is provided. The display panel includes a display region, a functional layer, a first insulating film, and a first conductive film; the display region includes a pixel; the pixel includes a display element and a pixel circuit; the display element includes a first electrode and a second electrode; the second electrode includes a first opening portion; the functional layer includes the pixel circuit, a second opening portion, and an auxiliary wiring; the pixel circuit is electrically connected to the display element in the second opening portion; the auxiliary wiring includes a region overlapping with the first opening portion; the first insulating film includes a third opening portion; the third opening portion includes a region overlapping with the first opening portion; and the first conductive film is electrically connected to the second electrode and the auxiliary wiring in the third opening portion.

Claims (54)

1. A display device comprising:

a transistor;

a first insulating film over the transistor;

a first conductive film over the first insulating film, the first conductive film configured to serve as a first electrode of a display element;

a second conductive film over the first insulating film, the second conductive film comprising the same material as the first conductive film;

a second insulating film comprising a first opening portion overlapping with the first conductive film, the second insulating film comprising a region overlapping with a peripheral edge of the first conductive film;

a layer comprising a light-emitting material, the layer comprising a first region in the first opening portion of the second insulating film, a second region overlapping with the second insulating film, and a third region overlapping with the second conductive film; and

a third conductive film over the layer,

wherein a top surface of the third conductive film comprises a first step in a region overlapping with the second conductive film through the layer and not overlapping with the second insulating film,

wherein the top surface of the third conductive film comprises a second step in a region overlapping with the second conductive film and not overlapping with the layer,

wherein the layer comprises a second opening portion overlapping with the second conductive film and not overlapping with the second insulating film,

wherein the layer comprises a region in contact with the second conductive film, and

wherein the third conductive film is electrically connected to the second conductive film through the second opening portion of the layer.

2. The display device according to claim 1 ,

wherein the second insulating film does not comprise a region in contact with the third conductive film.

3. The display device according to claim 1 ,

wherein the transistor comprises a semiconductor film, and

wherein the semiconductor film comprises an oxide semiconductor.

4. The display device according to claim 1 ,

wherein the transistor comprises a semiconductor film, a third insulating film configured to serve as a gate insulating film, a fourth conductive film configured to serve as a gate electrode, a fifth conductive film configured to serve as one of a source electrode and a drain electrode, and a sixth conductive film configured to serve as the other of the source electrode and the drain electrode,

wherein the fourth conductive film comprises a region overlapping with the semiconductor film through the third insulating film,

wherein the semiconductor film comprises a region in contact with the third insulating film and a region in contact with a fourth insulating film,

wherein the fourth insulating film comprises a region over the fourth conductive film,

wherein the fifth conductive film comprises a region over the fourth insulating film and is electrically connected to the semiconductor film through a third opening portion of the fourth insulating film, and

wherein the sixth conductive film comprises a region over the fourth insulating film and is electrically connected to the semiconductor film through a fourth opening portion of the fourth insulating film.

5. The display device according to claim 4 ,

wherein the semiconductor film comprises an oxide semiconductor.

6. A display device comprising:

a transistor;

a first insulating film over the transistor, the first insulating film configured to serve as a planarization film;

a first conductive film over the first insulating film, the first conductive film configured to serve as a first electrode of a display element;

a second conductive film over the first insulating film, the second conductive film comprising the same material as the first conductive film;

a second insulating film comprising a first opening portion overlapping with the first conductive film, the second insulating film comprising a region overlapping with a peripheral edge of the first conductive film;

a layer comprising a light-emitting material, the layer comprising a first region in the first opening portion of the second insulating film, a second region overlapping with the second insulating film, and a third region overlapping with the second conductive film; and

a third conductive film over the layer,

wherein a top surface of the third conductive film comprises a first step in a region overlapping with the second conductive film through the layer and not overlapping with the second insulating film,

wherein the top surface of the third conductive film comprises a second step in a region overlapping with the second conductive film and not overlapping with the layer,

wherein the layer comprises a second opening portion overlapping with the second conductive film and not overlapping with the second insulating film,

wherein the layer comprises a region in contact with the second conductive film, and

wherein the third conductive film is electrically connected to the second conductive film through the second opening portion of the layer.

7. The display device according to claim 6 ,

wherein the second insulating film does not comprise a region in contact with the third conductive film.

8. The display device according to claim 6 ,

wherein the transistor comprises a semiconductor film, and

wherein the semiconductor film comprises an oxide semiconductor.

9. The display device according to claim 6 ,

wherein the transistor comprises a semiconductor film, a third insulating film configured to serve as a gate insulating film, a fourth conductive film configured to serve as a gate electrode, a fifth conductive film configured to serve as one of a source electrode and a drain electrode, and a sixth conductive film configured to serve as the other of the source electrode and the drain electrode,

wherein the fourth conductive film comprises a region overlapping with the semiconductor film through the third insulating film,

wherein the semiconductor film comprises a region in contact with the third insulating film and a region in contact with a fourth insulating film,

wherein the fourth insulating film comprises a region over the fourth conductive film,

wherein the fifth conductive film comprises a region over the fourth insulating film and is electrically connected to the semiconductor film through a third opening portion of the fourth insulating film, and

wherein the sixth conductive film comprises a region over the fourth insulating film and is electrically connected to the semiconductor film through a fourth opening portion of the fourth insulating film.

10. The display device according to claim 9 ,

wherein the semiconductor film comprises an oxide semiconductor.

Priority Claims (1)
JP 2018-160323 · Aug 29, 2018 · national
Continuity (2)
Continuation 17269042
Related Publication 20240224676A1 · Jul 4, 2024
References Cited (71)
US 6887100B2 · Matsueda et al. · 2005 [cited by applicant]
US 7161184B2 · Miyagi et al. · 2007 [cited by applicant]
US 7198515B2 · Matsueda et al. · 2007 [cited by applicant]
US 7221095B2 · Yamazaki et al. · 2007 [cited by applicant]
US 7224118B2 · Yamazaki et al. · 2007 [cited by applicant]
US 7301276B2 · Yamazaki et al. · 2007 [cited by applicant]
US 7411344B2 · Yamazaki et al. · 2008 [cited by applicant]
US 7619258B2 · Tsuchiya et al. · 2009 [cited by applicant]
US 7692610B2 · Kimura · 2010 [cited by applicant]
US 7880380B2 · Yamazaki et al. · 2011 [cited by applicant]
US 7943938B2 · Miyagi et al. · 2011 [cited by applicant]
US 7977678B2 · Yamazaki et al. · 2011 [cited by applicant]
US RE42623E · Matsueda et al. · 2011 [cited by applicant]
US 7994711B2 · Nakamura et al. · 2011 [cited by applicant]
US 8188476B2 · Takagi et al. · 2012 [cited by applicant]
US 8362694B2 · Hanawa · 2013 [cited by applicant]
US 8482010B2 · Kanegae · 2013 [cited by applicant]
US 8518754B2 · Takagi et al. · 2013 [cited by applicant]
US 8759835B2 · Miyagi et al. · 2014 [cited by applicant]
US 8917016B2 · Yamazaki et al. · 2014 [cited by applicant]
US 9117785B2 · Kashiwabara et al. · 2015 [cited by applicant]
US 9261722B2 · Miyagi et al. · 2016 [cited by applicant]
US 9443876B2 · Yamazaki · 2016 [cited by examiner]
US 9887241B2 · Yamazaki et al. · 2018 [cited by applicant]
US 9997542B2 · Miyagi et al. · 2018 [cited by applicant]
US 10050098B2 · Nam et al. · 2018 [cited by applicant]
US 10249645B2 · Yamazaki et al. · 2019 [cited by applicant]
US 10345977B2 · Kimura et al. · 2019 [cited by applicant]
US 10381385B2 · Miyagi et al. · 2019 [cited by applicant]
US 10504985B2 · Nam et al. · 2019 [cited by applicant]
US 10811435B2 · Yamazaki et al. · 2020 [cited by applicant]
US 10866682B2 · Kimura et al. · 2020 [cited by applicant]
US 11107837B2 · Yamazaki et al. · 2021 [cited by applicant]
US 11387263B2 · Miyagi et al. · 2022 [cited by applicant]
US 20080272992A1 · Kwak · 2008 [cited by examiner]
US 20080287028A1 · Ozawa · 2008 [cited by examiner]
US 20100102335A1 · Takagi · 2010 [cited by examiner]
US 20140346459A1 · Song · 2014 [cited by examiner]
US 20150144914A1 · Kashiwabara · 2015 [cited by examiner]
US 20150221678A1 · Yamazaki · 2015 [cited by examiner]
US 20150316802A1 · Takanishi · 2015 [cited by examiner]
US 20160155790A1 · Lee et al. · 2016 [cited by applicant]
US 20170155078A1 · Lee · 2017 [cited by applicant]
US 20170186831A1 · Nam · 2017 [cited by examiner]
US 20180107301A1 · Kimura · 2018 [cited by examiner]
US 20220020781A1 · Yamazaki et al. · 2022 [cited by applicant]
CN 001671255A · 2005 [cited by applicant]
CN 101599534A · 2009 [cited by applicant]
CN 101728421A · 2010 [cited by applicant]
CN 102741905A · 2012 [cited by applicant]
CN 103035665A · 2013 [cited by applicant]
CN 104821338A · 2015 [cited by applicant]
CN 107039491A · 2017 [cited by applicant]
EP 3188274A · 2017 [cited by applicant]
JP 2005031645A · 2005 [cited by applicant]
JP 2005031651A · 2005 [cited by applicant]
JP 2006113597A · 2006 [cited by applicant]
JP 2009266451A · 2009 [cited by applicant]
JP 2010108693A · 2010 [cited by applicant]
JP 2014103424A · 2014 [cited by applicant]
JP 2015121764A · 2015 [cited by applicant]
JP 2017120782A · 2017 [cited by applicant]
JP 2018067308A · 2018 [cited by applicant]
KR 20100047796A · 2010 [cited by applicant]
KR 20140136787A · 2014 [cited by applicant]
KR 20150059588A · 2015 [cited by applicant]
KR 20170078175A · 2017 [cited by applicant]
TW 201023679 · 2010 [cited by applicant]
International Search Report (Application No. PCT/IB2019/057029) Dated Dec. 3, 2019. [cited by applicant]
Written Opinion (Application No. PCT/IB2019/057029) Dated Dec. 3, 2019. [cited by applicant]
Chinese Office Action (Application No. 201980055083.5) Dated Sep. 5, 2022. [cited by applicant]