Stacked integrated circuit
The present disclosure provides a chip including an even area including an even through via through which an even address is received and an even redundancy through via through which an even redundancy address is received, and an odd area including an odd through via through which an odd address is received and an odd redundancy through via through which an odd redundancy address is received. In the present disclosure, the even area may include an even address selection circuit configured to, based on a chip information signal, generate a selection even address and a selection even redundancy address from the even address, the even redundancy address, the odd address, and the odd redundancy address, and an even internal address generation circuit configured to, based on an even repair signal, generate an internal even address from the selection even address and the selection even redundancy address.
1. A chip comprising:
an even through via, through which an even address is received, and an even redundancy through via, through which an even redundancy address is received; and
an odd through via, through which an odd address is received, and an odd redundancy through via, through which an odd redundancy address is received;
an even address selection circuit configured to generate a selection even address and a selection even redundancy address based on a chip information signal, the even address, the even redundancy address, the odd address, and the odd redundancy address; and
an even internal address generation circuit configured to generate an internal even address based on an even repair signal, the selection even address, and the selection even redundancy address;
an odd address selection circuit configured to generate a selection odd address and a selection odd redundancy address based on the chip information signal, the even address, the even redundancy address, the odd address, and the odd redundancy address;
wherein the even through via, the even redundancy through via, the even address selection circuit and the even internal address generation circuit are disposed in an even area; and
wherein the odd through via, the odd redundancy through via, and the odd address selection circuit are disposed in an odd area.
2. The chip of claim 1 , wherein the even address selection circuit is configured to:
receive the chip information signal at a first logic level when the chip is a lower chip, and
receive the chip information signal at a second logic level when the chip is an upper chip.
3. The chip of claim 2 , wherein the even address selection circuit is configured to:
generate the selection even address and the selection even redundancy address from the even address and the even redundancy address when the level of the chip information signal is at the first logic level, and
generate the selection even address and the selection even redundancy address from the odd address and the odd redundancy address when the chip information signal is at the second logic level.
4. A chip comprising:
an even through via, through which an even address is received, and an even redundancy through via, through which an even redundancy address is received; and
an odd through via, through which an odd address is received, and an odd redundancy through via, through which an odd redundancy address is received;
an even address selection circuit configured to generate a selection even address and a selection even redundancy address based on a chip information signal, the even address, the even redundancy address, the odd address, and the odd redundancy address; and
an even internal address generation circuit configured to generate an internal even address based on an even repair signal, the selection even address, and the selection even redundancy address;
wherein, when a fail occurs in the even through via, the even internal address generation circuit is configured to receive the even repair signal that is activated;
wherein the even through via, the even redundancy through via, the even address selection circuit and the even internal address generation circuit are disposed in an even area; and
wherein the odd through via and the odd redundancy through via are disposed in an odd area.
5. The chip of claim 4 , wherein the even internal address generation circuit is configured to:
generate the internal even address from the selection even address when the even repair signal is not activated, and
generate the internal even address by shifting the selection even redundancy address when the even repair signal is activated.
6. The chip of claim 1 ,
wherein the even through via comprises a first even through via and a second even through via,
wherein the even repair signal comprises a first even repair signal and a second even repair signal,
wherein the even internal address generation circuit is configured to:
receive the first even repair signal that is activated when a fail occurs in the first even through via, and
receive the second even repair signal that is activated when a fail occurs in the second even through via.
7. The chip of claim 6 ,
wherein the selection even address comprises a first selection even address and a second selection even address,
wherein the internal even address comprises a first internal even address and a second internal even address, and
wherein, when the first even repair signal and the second even repair signal are not activated, the even internal address generation circuit is configured to generate the first internal even address from the first selection even address and to generate the second internal even address from the second selection even address.
8. The chip of claim 7 , wherein, when the first even repair signal is activated, the even internal address generation circuit is configured to generate the first internal even address by shifting the second selection even address and to generate the second internal even address by shifting the selection even redundancy address.
9. The chip of claim 7 , wherein, when the second even repair signal is activated, the even internal address generation circuit is configured to generate the first internal even address from the first selection even address and to generate the second internal even address by shifting the selection even redundancy address.
10. The chip of claim 1 , wherein the odd address selection circuit is configured to:
generate the selection odd address and the selection odd redundancy address from the odd address and the odd redundancy address when a level of the chip information signal is at a first logic level, and
generate the selection odd address and the selection odd redundancy address from the even address and the even redundancy address when a level of the chip information signal is at a second logic level.
11. The chip of claim 1 , further comprising an odd internal address generation circuit configured to generate an internal odd address based on an odd repair signal, the selection odd address, and the selection odd redundancy address.
12. The chip of claim 11 , wherein the odd internal address generation circuit is configured to receive the odd repair signal that is activated when a fail occurs in the odd through via.
13. The chip of claim 12 , wherein the odd internal address generation circuit is configured to:
generate the internal odd address from the selection odd address when the odd repair signal is not activated, and
generate the internal odd address by shifting the selection odd redundancy address when the odd repair signal is activated.
14. A stacked integrated circuit comprising:
a lower chip comprising a lower even area and a lower odd area; and
an upper chip comprising an upper odd area and an upper even area,
wherein the upper chip is stacked on the lower chip,
a lower even address selection circuit configured to generate a lower selection even address and a lower selection even redundancy address from an even address and an even redundancy address; and
a lower even internal address generation circuit configured to generate a lower internal even address based on a lower even repair signal, the lower selection even address, and the lower selection even redundancy address;
a lower odd address selection circuit configured to generate a lower selection odd address and a lower selection odd redundancy address based on a chip information signal, the even address, the even redundancy address, an odd address, and an odd redundancy address,
wherein the lower even address selection circuit and the lower even internal address generation circuit are disposed in the lower even area.
15. The stacked integrated circuit of claim 14 ,
wherein the upper odd area is disposed on the lower even area, and
wherein the upper even area is disposed on the lower odd area.
16. The stacked integrated circuit of claim 14 , further comprising:
a lower odd address selection circuit configured to generate a lower selection odd address and a lower selection odd redundancy address from an odd address and an odd redundancy address; and
a lower odd internal address generation circuit configured to generate a lower internal odd address based on a lower odd repair signal, the lower selection odd address, and the lower selection odd redundancy address;
wherein the lower odd address selection circuit and the lower odd internal address generation circuit are disposed in the lower odd area.
17. The stacked integrated circuit of claim 14 , further comprising:
an upper odd address selection circuit configured to generate an upper selection odd address and an upper selection odd redundancy address from the even address and the even redundancy address; and
an upper odd internal address generation circuit configured to generate an upper internal odd address based on an upper odd repair signal, the upper selection odd address, and the upper selection odd redundancy address;
wherein the upper odd address selection circuit and the upper odd internal address generation circuit are disposed in the upper odd area.
18. The stacked integrated circuit of claim 14 , further comprising:
an upper even address selection circuit configured to generate an upper selection even address and an upper selection even redundancy address from the odd address and the odd redundancy address; and
an upper even internal address generation circuit configured to generate an upper internal even address based on an upper even repair signal, the upper selection even address, and the upper selection even redundancy address;
wherein the upper even address selection circuit and the upper even internal address generation circuit are disposed in the upper even area.
19. The stacked integrated circuit of claim 14 , further comprising a base chip configured to apply the even address, the even redundancy address, the odd address, and the odd redundancy address to a back pad of the lower chip.