Acoustic wave device and composite filter device
An acoustic wave device includes an IDT electrode laminated on a piezoelectric substrate and defining a first resonator, and an IDT electrode laminated on the piezoelectric substrate and defining a second resonator. The first and second resonators are connected in parallel or in series. The IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film.
1. An acoustic wave device comprising:
a piezoelectric layer;
an IDT electrode laminated on the piezoelectric layer and defining a first resonator; and
an IDT electrode laminated on the piezoelectric layer and defining a second resonator; wherein
the first resonator and the second resonator are connected in parallel or in series;
the IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film; and
the first resonator and the second resonator are a plurality of divided resonators provided by dividing one resonator so as to have an equivalent impedance to an impedance before being divided.
2. The acoustic wave device according to claim 1 , wherein the first resonator and the second resonator are each parallel divided resonators.
3. The acoustic wave device according to claim 1 , wherein the first resonator and the second resonator are each series divided resonators.
4. The acoustic wave device according to claim 1 , wherein the acoustic wave device is included in an acoustic wave filter.
5. The acoustic wave filter according to claim 4 , wherein the acoustic wave filter is included in a transmission filter.
6. An acoustic wave filter comprising:
an antenna terminal;
an acoustic wave device; and
a plurality of resonators; wherein
the acoustic wave device includes:
a piezoelectric layer;
an IDT electrode laminated on the piezoelectric layer and defining a first resonator; and
an IDT electrode laminated on the piezoelectric layer and defining a second resonator;
the plurality of resonators include the first resonator and the second resonator;
the first resonator and the second resonator are connected in parallel or in series;
the IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film; and
the first resonator and the second resonator are closest to the antenna terminal among the plurality of resonators.
7. The acoustic wave filter according to claim 6 , wherein the acoustic wave filter is included in a transmission filter.
8. A composite filter device comprising:
an acoustic wave filter; and
at least one band pass filter; wherein
the acoustic wave filter and the at least one band pass filter are commonly connected at ends thereof;
the acoustic wave filter includes an acoustic wave device;
the acoustic wave device includes:
a piezoelectric layer;
an IDT electrode laminated on the piezoelectric layer and defining a first resonator; and
an IDT electrode laminated on the piezoelectric layer and defining a second resonator;
the first resonator and the second resonator are connected in parallel or in series; and
the IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film.
9. The composite filter device according to claim 8 , wherein the composite filter device is included in a multiplexer.
10. The acoustic wave filter according to claim 8 , wherein the acoustic wave filter is included in a transmission filter.
11. An acoustic wave device comprising:
a piezoelectric layer;
an IDT electrode laminated on the piezoelectric layer and defining a first resonator; and
an IDT electrode laminated on the piezoelectric layer and defining a second resonator;
wherein the first resonator and the second resonator are connected in parallel or in series;
the IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film;
each of the IDT electrodes has a laminated structure including an underlying electrode layer and a main electrode layer; and
the first resonator and the second resonator are a plurality of divided resonators provided by dividing one resonator so as to have an equivalent impedance to an impedance before being divided.
12. The acoustic wave device according to claim 11 , wherein the first resonator and the second resonator are each parallel divided resonators.
13. The acoustic wave device according to claim 11 , wherein the first resonator and the second resonator are each series divided resonators.
14. The acoustic wave device according to claim 11 , wherein the acoustic wave device is included in an acoustic wave filter.
15. The acoustic wave filter according to claim 14 , wherein the acoustic wave filter is included in a transmission filter.
16. An acoustic wave filter comprising:
an antenna terminal;
an acoustic wave device; and
a plurality of resonators; wherein
the acoustic wave device includes:
a piezoelectric layer;
an IDT electrode laminated on the piezoelectric layer and defining a first resonator; and
an IDT electrode laminated on the piezoelectric layer and defining a second resonator;
the plurality of resonators include the first resonator and the second resonator;
the first resonator and the second resonator are connected in parallel or in series;
the IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film;
each of the IDT electrodes has a laminated structure including an underlying electrode layer and a main electrode layer; and
the first resonator and the second resonator are closest to the antenna terminal among the plurality of resonators.
17. The acoustic wave filter according to claim 16 , wherein the acoustic wave filter is included in a transmission filter.
18. A composite filter device comprising:
an acoustic wave filter; and
at least one band pass filter; wherein
the acoustic wave filter and the at least one band pass filter are commonly connected at ends thereof;
the acoustic wave filter includes an acoustic wave device;
the acoustic wave device includes:
a piezoelectric layer;
an IDT electrode laminated on the piezoelectric layer and defining a first resonator; and
an IDT electrode laminated on the piezoelectric layer and defining a second resonator;
the first resonator and the second resonator are connected in parallel or in series;
the IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film; and
each of the IDT electrodes has a laminated structure including an underlying electrode layer and a main electrode layer.
19. The composite filter device according to claim 18 , wherein the composite filter device is included in a multiplexer.
20. The acoustic wave filter according to claim 18 , wherein the acoustic wave filter is included in a transmission filter.