Display device
A display device includes a substrate, a first transistor including an oxide semiconductor layer, a first gate insulating layer, and a first gate electrode, the first transistor being provided in a display region, and a light-shielding layer provided between the substrate and the oxide semiconductor layer. The light-shielding layer includes a first light-shielding metal layer and a second light-shielding metal layer. The first light-shielding metal is provided between the substrate and the oxide semiconductor layer. The second light-shielding metal layer covers the top surface and side surface of the first light-shielding metal layer and faces the oxide semiconductor layer.
1. A display device comprising:
a substrate;
a first transistor including an oxide semiconductor layer, a first gate insulating layer, and a first gate electrode, the first transistor being provided in a display region;
a light-shielding layer provided between the substrate and the oxide semiconductor layer; and
a second transistor including a second semiconductor layer, a second gate insulating layer, and a second gate electrode, the second transistor being provided in a peripheral region located around the display region, and the second semiconductor layer containing silicon, wherein
the light-shielding layer includes a first light-shielding metal layer and a second light-shielding metal layer,
the first light-shielding metal layer is provided between the substrate and the oxide semiconductor layer,
the second light-shielding metal layer covers the top surface and side surface of the first light-shielding metal layer and faces the oxide semiconductor layer, and
the second light-shielding metal layer and the second gate electrode are provided on a same layer.
2. The display system according to claim 1 , wherein
the first gate electrode extends from the display region to the peripheral region, and
the second gate electrode is connected to the first gate electrode at an edge of the display region.
3. The display system according to claim 1 , wherein
the thickness of the light-shielding layer is 100 nm or more.
4. The display system according to claim 1 , wherein
a width of the light-shielding layer is greater than a width of the first gate electrode.
5. The display system according to claim 1 , wherein
the first gate electrode and the light-shielding layer are electrically connected.
6. The display system according to claim 1 , wherein the first gate electrode extends in a first direction from the display region to the peripheral region, and includes a protruding portion protruding in a second direction intersecting the first direction at the periphery of the display region, a main line portion of the first gate electrode and the second gate electrode are separated from each other in the direction intersecting the extending direction, and the main line portion of the first gate electrode and the second gate electrode are connected to each other via the protruding portion of the first gate electrode.
7. The display system according to claim 1 , wherein
the first gate electrode extends in a first direction from the display region to the peripheral region,
at least one dummy transistor is provided between the oxide semiconductor layer and an edge of the first gate electrode, and the at least one dummy transistor is provided with an oxide semiconductor layer and a wiring overlapping the oxide semiconductor layer, and
the oxide semiconductor layer and the wiring intersect with the first gate electrode and are connected to each other at both edges of the oxide semiconductor layer and the wiring.
8. The display system according to claim 1 , wherein
the oxide semiconductor layer of the dummy transistor is formed in the same layer as the oxide semiconductor layer of the first transistor, and
the wiring is formed in an upper layer than the first gate electrode.
9. A display device comprising;
a substrate;
a first transistor including an oxide semiconductor layer, a first gate insulating layer, and a first gate electrode, the first transistor being provided in a display region;
a light-shielding layer provided between the substrate and the oxide semiconductor layer and overlapping the oxide semiconductor layer, and
a second transistor including a second semiconductor layer, a second gate insulating layer, and a second gate electrode, the second transistor being provided in a peripheral region located around the display region, and the second semiconductor layer containing silicon, wherein
a thickness of the light-shielding layer is greater than a thickness of the second gate electrode,
the first gate electrode extends in a first direction from the display region to the peripheral region, and
the second gate electrode is connected to the first gate electrode at an edge of the display region.
10. The display device according to claim 9 , wherein
the thickness of the light-shielding layer is twice or greater than the thickness of the second gate electrode.
11. The display system according to claim 9 , wherein
the light-shielding layer includes a first light-shielding metal layer and a second light-shielding metal layer that covers a top surface and a side surface of the first light-shielding metal layer.
12. The display system according to claim 9 , wherein
the thickness of the light-shielding layer is 100 nm or more.
13. The display system according to claim 9 , wherein
a width of the light-shielding layer is greater than a width of the first gate electrode.
14. The display system according to claim 9 , wherein
the first gate electrode and the light-shielding layer are electrically connected.
15. The display system according to claim 9 , wherein
the first gate electrode includes a protruding portion protruding in a second direction intersecting the first direction at the periphery of the display region,
a main line portion of the first gate electrode and the second gate electrode are separated from each other in the direction intersecting the extending direction, and
the main line portion of the first gate electrode and the second gate electrode are connected to each other via the protruding portion of the first gate electrode.
16. The display system according to claim 9 , wherein
at least one dummy transistor is provided between the oxide semiconductor layer and an edge of the first gate electrode, and the at least one dummy transistor is provided with an oxide semiconductor layer and a wiring overlapping the oxide semiconductor layer, and
the oxide semiconductor layer and the wiring intersect with the first gate electrode and are connected to each other at both edges of the oxide semiconductor layer and the wiring.
17. The display system according to claim 16 , wherein
the oxide semiconductor layer of the dummy transistor is formed in the same layer as the oxide semiconductor layer of the first transistor, and
the wiring is formed in an upper layer than the first gate electrode.
18. A display device comprising;
a substrate;
a first transistor including an oxide semiconductor layer, a first gate insulating layer, and a first gate electrode, the first transistor being provided in a display region;
a light-shielding layer provided between the substrate and the oxide semiconductor layer and overlapping the oxide semiconductor layer, and
a second transistor including a second semiconductor layer, a second gate insulating layer, and a second gate electrode, the second transistor being provided in a peripheral region located around the display region, and the second semiconductor layer containing silicon, wherein
a thickness of the light-shielding layer is greater than a thickness of the second gate electrode,
the first gate electrode extends in a first direction from the display region to the peripheral region,
at least one dummy transistor is provided between the oxide semiconductor layer and an edge of the first gate electrode, and the at least one dummy transistor is provided with an oxide semiconductor layer and a wiring overlapping the oxide semiconductor layer, and
the oxide semiconductor layer and the wiring intersect with the first gate electrode and are connected to each other at both edges of the oxide semiconductor layer and the wiring.
19. The display system according to claim 18 , wherein
the oxide semiconductor layer of the dummy transistor is formed in the same layer as the oxide semiconductor layer of the first transistor, and
the wiring is formed in an upper layer than the first gate electrode.