IP Library Granted Patent US 12,439,698
Granted Patent B2
US 12,439,698 · App. 18/914,506 · Granted Oct 7, 2025

Display device

Inventors: Dong-Hwi Kim (Osan-si, KR); Jin Jeon (Seoul, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H10D86/60G09G3/32H10D86/441G09G2300/0426G09G2300/0809G09G2310/0243G09G2310/0267H10H29/142H10K59/1213H10K59/1216H10K59/131H10K59/35
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Quick Facts
Patent No.
US 12,439,698
App. No.
18/914,506
Granted
Oct 7, 2025
Kind
B2
Abstract

A display device includes a first region and a second region each including a plurality of pixels, and a plurality of wires connected to the plurality of pixels, respectively, to transmit a signal, where the number of pixels per unit area in the second region is less than the number of pixels per unit area in the first region, and the number of wires per unit area in the second region is less than the number of wires per unit area in the first region.

Claims (46)

1. A display device, comprising:

a substrate;

a polycrystalline semiconductor layer on the substrate, the polycrystalline semiconductor layer including a channel, a first electrode, and a second electrode of a first transistor and a channel, a first electrode, and a second electrode of a second transistor;

a first gate conductor layer including a gate electrode of the first transistor overlapping the channel of the first transistor, and a gate electrode of the second transistor overlapping the channel of the second transistor;

an oxide semiconductor layer on the substrate, the oxide semiconductor layer including a channel, a first electrode, and a second electrode of a third transistor;

a second gate conductor layer including a lower gate electrode of the third transistor overlapping the channel of the third transistor;

a third gate conductor layer including an upper gate electrode of the third transistor overlapping the channel of the third transistor;

a first data conductor layer including a first initialization voltage supply line electrically connected to the second transistor, a second initialization voltage supply line, and a first connection electrode electrically connected to the second electrode of the third transistor and the gate electrode of the first transistor; and

a fourth transistor connected to the second initialization voltage supply line,

wherein the second initialization voltage supply line is disposed on the same layer as the first initialization voltage supply line.

2. The display device of claim 1 , wherein

the fourth transistor is connected between the second initialization voltage supply line and the third transistor, and

the first initialization voltage supply line is disposed on the same layer as the first connection electrode.

3. The display device of claim 2 , wherein

the oxide semiconductor layer further includes a channel, a first electrode, and a second electrode of the fourth transistor,

the second gate conductor layer further includes a lower gate electrode of the fourth transistor overlapping the channel of the fourth transistor,

the third gate conductor layer further includes an upper gate electrode of the fourth transistor overlapping the channel of the fourth transistor.

4. The display device of claim 2 , further comprising:

a light emitting diode connected between a driving voltage line and a common voltage line;

a fifth transistor connected between the first electrode of the first transistor and a data line, the first electrode of the first transistor being connected to the driving voltage line; and

a storage capacitor connected between the driving voltage line and the gate electrode of the first transistor.

5. The display device of claim 4 , wherein

the polycrystalline semiconductor layer further includes a channel, a first electrode, and a second electrode of the fifth transistor, and

the first gate conductor layer further includes a gate electrode of the fifth transistor.

6. The display device of claim 5 , wherein the first electrode of the first transistor is extended to the second electrode of the fifth transistor.

7. The display device of claim 5 , wherein

the second gate conductor further includes a first storage electrode of the storage capacitor, and

the first storage electrode overlaps the gate electrode of the first transistor.

8. The display device of claim 4 , further comprising:

a sixth transistor connected between the driving voltage line and the first electrode of the first transistor; and

a seventh transistor connected between the second electrode of the first transistor and the light emitting diode.

9. The display device of claim 8 , wherein

the polycrystalline semiconductor layer further includes a channel, a first electrode, and a second electrode of the sixth transistor, and

the first gate conductor layer further includes a gate electrode of the sixth transistor.

10. The display device of claim 9 , wherein

the first electrode of the sixth transistor is connected to the driving voltage line, and

the second electrode of the sixth transistor is extended to the first electrode of the first transistor.

11. The display device of claim 9 , wherein

the polycrystalline semiconductor layer further includes a channel, a first electrode, and a second electrode of the seventh transistor, and

the first gate conductor layer further includes a gate electrode of the seventh transistor.

12. The display device of claim 11 , wherein

the first electrode of the seventh transistor is extended to the second electrode of the first transistor, and

the second electrode of the seventh transistor is connected to an anode of the light emitting diode.

13. The display device of claim 1 , further comprising:

a light blocking member disposed on the substrate,

wherein the light blocking member is disposed between the substrate and the gate electrode of the first transistor.

Priority Claims (1)
KR 10-2020-0024388 · Feb 27, 2020 · national
Continuity (4)
Continuation 18136756 · Apr 19, 2023
Continuation 17555370 · Dec 17, 2021
Continuation 16996504 · Aug 18, 2020
Related Publication 20250040252A1 · Jan 30, 2025
References Cited (62)
US 8287425B2 · Omote et al. · 2012 [cited by applicant]
US 9866660B2 · Myers et al. · 2018 [cited by applicant]
US 10319306B2 · Jeong et al. · 2019 [cited by applicant]
US 10490617B2 · Kim et al. · 2019 [cited by applicant]
US 10650739B2 · Kim · 2020 [cited by examiner]
US 10879332B2 · Gu et al. · 2020 [cited by applicant]
US 11011595B2 · Lee et al. · 2021 [cited by applicant]
US 11030953B2 · Kim et al. · 2021 [cited by applicant]
US 11263968B2 · Wang et al. · 2022 [cited by applicant]
US 11315469B2 · Li et al. · 2022 [cited by applicant]
US 11348402B2 · Ceniceroz et al. · 2022 [cited by applicant]
US 11444130B2 · Tan · 2022 [cited by applicant]
US 11468838B2 · Kim et al. · 2022 [cited by applicant]
US 11538392B2 · Li et al. · 2022 [cited by applicant]
US 11562680B2 · Li et al. · 2023 [cited by applicant]
US 11659743B2 · Lee et al. · 2023 [cited by applicant]
US 11710455B2 · Jeong et al. · 2023 [cited by applicant]
US 11922883B2 · Jeong et al. · 2024 [cited by applicant]
US 20080303776A1 · Jung · 2008 [cited by applicant]
US 20120062545A1 · Kim · 2012 [cited by applicant]
US 20140092355A1 · Teranuma et al. · 2014 [cited by applicant]
US 20140299843A1 · Kim · 2014 [cited by applicant]
US 20150364091A1 · Won et al. · 2015 [cited by applicant]
US 20170365218A1 · Jeong et al. · 2017 [cited by applicant]
US 20180006105A1 · Kim et al. · 2018 [cited by applicant]
US 20180040682A1 · Ebisuno et al. · 2018 [cited by applicant]
US 20190051672A1 · Lee et al. · 2019 [cited by applicant]
US 20190295471A1 · Jeong et al. · 2019 [cited by applicant]
US 20190304361A1 · Lu · 2019 [cited by examiner]
US 20190304366A1 · Ka · 2019 [cited by examiner]
US 20190377923A1 · Chen et al. · 2019 [cited by applicant]
US 20200043994A1 · Chen et al. · 2020 [cited by applicant]
US 20200044009A1 · Kwak · 2020 [cited by examiner]
US 20200227488A1 · Xin · 2020 [cited by examiner]
US 20200279874A1 · Kawashima et al. · 2020 [cited by applicant]
US 20210065625A1 · Wang et al. · 2021 [cited by applicant]
US 20220254225A1 · Ceniceroz et al. · 2022 [cited by applicant]
US 20220254296A1 · Li et al. · 2022 [cited by applicant]
US 20220277616A1 · Ceniceroz et al. · 2022 [cited by applicant]
US 20230053847A1 · Kim et al. · 2023 [cited by applicant]
US 20230078129A1 · Li et al. · 2023 [cited by applicant]
US 20240066427A1 · Fich et al. · 2024 [cited by applicant]
US 20240203355A1 · Jeong et al. · 2024 [cited by applicant]
CN 107527591A · 2017 [cited by applicant]
CN 107544166A · 2018 [cited by applicant]
CN 108735790A · 2018 [cited by applicant]
CN 209070895U · 2019 [cited by applicant]
CN 110379356A · 2019 [cited by applicant]
CN 110444125A · 2019 [cited by applicant]
CN 110797373A · 2020 [cited by applicant]
EP 3258463 · 2017 [cited by applicant]
JP 2010243520A · 2010 [cited by applicant]
KR 1020050005646A · 2005 [cited by applicant]
KR 101169053B1 · 2012 [cited by applicant]
KR 1020160147116A · 2016 [cited by applicant]
KR 1020170113066A · 2017 [cited by applicant]
KR 1020180025354A · 2018 [cited by applicant]
KR 1020180112158A · 2018 [cited by applicant]
KR 1020190034375A · 2019 [cited by applicant]
KR 1020190087695A · 2019 [cited by applicant]
KR 20190114066A · 2019 [cited by applicant]
WO 2019242510A1 · 2019 [cited by applicant]