Silicon-germanium alloy-based quantum dots with increased alloy disorder and enhanced valley splitting
Gate-controlled quantum dots based on silicon-germanium (SiGe) alloy heterostructures are provided. Also provided are quantum computing systems incorporating the gate-controlled quantum dots. The quantum dots are formed in a semiconductor heterostructure in which a SiGe alloy quantum well is sandwiched between SiGe alloy barriers or between Ge barriers. The presence of germanium in the quantum dots increases the average valley splitting for quantum dots confined in the SiGe. As a result, the yield of quantum dots having a sufficiently high valley splitting for device applications is increased by the use of a SiGe alloy in the quantum well.
1. A gate-controlled quantum dot device comprising:
a semiconductor heterostructure comprising:
a first barrier comprising a silicon-germanium alloy or germanium;
a second barrier comprising a silicon-germanium alloy or germanium; and
a quantum well comprising a silicon-germanium alloy having random alloy disorder and a two-fold valley degeneracy at its conduction band minimum disposed between the first barrier and the second barrier, wherein the germanium concentration in the silicon-germanium alloy of the quantum well is lower than the germanium concentration in the first and second barriers; and
one or more electrostatic gates in electrical communication with the semiconductor heterostructure, wherein the one or more electrostatic gates are configured to apply a controllable potential to the quantum well, wherein the controllable potential forms at least one quantum dot comprising a confined electron in the quantum well.
2. The device of claim 1 , wherein the first and second barriers comprise the silicon germanium alloy.
3. The device of claim 2 , wherein the at least one quantum dot has a valley splitting of at least 100 μeV.
4. The device of claim 2 , wherein the at least one quantum dot has a valley splitting in the range from 100 μeV to 600 μeV.
5. The device of claim 2 , wherein the one or more electrostatic gates are configured to apply the controllable potential to form an array of quantum dots in the quantum well, each quantum dot comprising at least one confined electron.
6. The device of claim 5 , wherein the average valley splitting for the quantum dots in the array of quantum dots is at least 100 μeV.
7. The device of claim 2 , wherein the germanium concentration in the silicon-germanium alloy of the quantum well is at least 15 atomic percent lower than the germanium concentration in the silicon-germanium alloys of the first and second barriers.
8. The device of claim 2 , wherein the germanium concentration in the silicon-germanium alloy of the quantum well is in the range from 5 atomic percent to 15 atomic percent.
9. The device of claim 2 , wherein the germanium concentration in the silicon-germanium alloy of the quantum well is in the range from 5 atomic percent to 15 atomic percent; the germanium concentration in the silicon-germanium alloy of the quantum well is at least 15 atomic percent lower than the germanium concentration in the silicon-germanium alloys of the first and second barriers; and the quantum dot has a valley splitting in the range from 100 μeV to 600 μeV.
10. The device of claim 1 , wherein the at least one quantum dot has a valley splitting of at least 100 μeV.
11. The device of claim 1 , wherein the at least one quantum dot has a valley splitting in the range from 100 μeV to 600 μeV.
12. The device of claim 1 , wherein the one or more electrostatic gates are configured to apply the controllable potential to form an array of quantum dots in the quantum well, each quantum dot comprising at least one confined electron.
13. The device of claim 12 , wherein the average valley splitting for the quantum dots in the array of quantum dots is at least 100 μeV.
14. The device of claim 13 , wherein the array of quantum dots comprises 1000 or more quantum dots.
15. The device of claim 1 , wherein the germanium concentration in the silicon-germanium alloy of the quantum well is in the range from 5 atomic percent to 15 atomic percent.
16. A quantum computing device for performing quantum computation, the quantum computing device comprising:
a semiconductor heterostructure comprising:
a first barrier comprising a silicon-germanium alloy or germanium;
a second barrier comprising a silicon-germanium alloy or germanium; and
a quantum well comprising a silicon-germanium alloy having random alloy disorder and a two-fold valley degeneracy at its conduction band minimum disposed between the first barrier and the second barrier, wherein the germanium concentration in the silicon-germanium alloy of the quantum well is lower than the germanium concentration in the first and second barriers; and
one or more electrostatic gates in electrical communication with the semiconductor heterostructure, wherein the one or more electrostatic gates are configured to apply a controllable potential to the quantum well, wherein the controllable potential forms at least one quantum dot comprising a confined electron in the quantum well;
a controller for controlling the potential applied by the one or more electrostatic gates; and
a sensor for reading out a spin state of at least one electron in at least one quantum dot.
17. The quantum computing device of claim 16 , wherein the one or more electrostatic gates are configured to apply the controllable potential to form an array of 10,000 or more quantum dots in the quantum well, wherein an average valley splitting for the quantum dots in the array of quantum dots is at least 100 μeV.
18. A method of using a gate-controlled quantum dot device comprising:
a semiconductor heterostructure comprising:
a first barrier comprising a silicon-germanium alloy or germanium;
a second barrier comprising a silicon-germanium alloy or germanium; and
a quantum well comprising a silicon-germanium alloy having random alloy disorder and a two-fold valley degeneracy at its conduction band minimum disposed between the first barrier and the second barrier, wherein the germanium concentration in the silicon-germanium alloy of the quantum well is lower than the germanium concentration in the first and second barriers; and
one or more electrostatic gates in electrical communication with the semiconductor heterostructure, wherein the one or more electrostatic gates are configured to apply a controllable potential to the quantum well, wherein the controllable potential forms at least one quantum dot comprising a confined electron in the quantum well,
the method comprising: applying the controllable potential to the one or more electrostatic gates to form the at least one quantum dot.
19. A method of using a quantum computing device for performing quantum computation, the quantum computing device comprising:
a semiconductor heterostructure comprising:
a first barrier comprising a silicon-germanium alloy or germanium;
a second barrier comprising a silicon-germanium alloy or germanium; and
a quantum well comprising a silicon-germanium alloy having random alloy disorder and a two-fold valley degeneracy at its conduction band minimum disposed between the first barrier and the second barrier, wherein the germanium concentration in the silicon-germanium alloy of the quantum well is lower than the germanium concentration in the first and second barriers; and
one or more electrostatic gates in electrical communication with the semiconductor heterostructure, wherein the one or more electrostatic gates are configured to apply a controllable potential to the quantum well, wherein the controllable potential forms at least one quantum dot comprising a confined electron in the quantum well;
a controller for controlling the potential applied by the one or more electrostatic gates; and
a sensor for reading out a spin state of at least one electron in at least one quantum dot, the method comprising:
applying the controllable potential to the one or more electrostatic gates to form the at least one quantum dot; and
sensing the spin state of at least one electron in the at least one quantum dot.
20. The method of claim 19 , wherein the one or more electrostatic gates are configured to apply the controllable potential to form an array of 10,000 or more quantum dots in the quantum well, wherein an average valley splitting for the quantum dots in the array of quantum dots is at least 100 μeV.