OVJP deposition nozzle with delivery flow retarders
OVJP depositors having an exhaust aperture incorporated into the center of a flow retarder ( 510 ) are provided. Multiple flow retarders may be used to increase uniformity for applications such as OLED lighting that require larger features. Flow retarders may transect a delivery aperture completely or may extend part way through its length.
1. An organic vapor jet printing (OVJP) deposition system comprising:
an OVJP depositor comprising a solid monolithic block of material, the OVJP depositor further comprising:
a delivery channel through the solid monolithic block of material, ending in a delivery aperture at an outer surface of the solid monolithic block of material;
a first exhaust channel through the solid monolithic block of material; and
a second exhaust channel through the solid monolithic block of material, wherein the delivery channel is disposed between the first exhaust channel and the second exhaust channel;
wherein a portion of the solid monolithic block of material extends into the delivery channel to form a solid flow retarder that does not extend around an entire inner circumference of the delivery channel;
wherein there are no delivery channels other than the delivery channel disposed between the first exhaust channel and the second exhaust channel;
an organic material source in fluid communication with the delivery channel; and
a delivery gas source in fluid communication with the organic material source and the delivery channel such that organic material provided by the organic material source is entrained in and transported by a delivery gas provided by the delivery gas source to the delivery channel.
2. The deposition system of claim 1 , further comprising a confinement gas source in fluid communication with the delivery channel and with the exhaust channel.
3. The deposition system of claim 1 , wherein the flow retarder comprises a hollow channel terminating in an aperture at a distal end of the flow retarder.
4. The deposition system of claim 3 , wherein the hollow channel is in fluid communication with a constant pressure source.
5. The deposition system of claim 1 , wherein the flow retarder extends into the delivery channel from only a single wall of the delivery channel.
6. The deposition system of claim 1 , wherein the flow retarder has a width that varies as a function of length along the delivery aperture.
7. The deposition system of claim 1 , wherein the flow retarder has a position that varies as a function of the length along the delivery channel.
8. The deposition system of claim 1 , wherein the flow retarder has a rectangular cross section.
9. The deposition system of claim 1 , wherein the flow retarder is chamfered to have a tapered cross section.
10. The deposition system of claim 1 , wherein the OVJP depositor is symmetric about the flow retarder.
11. The deposition system of claim 1 , wherein an odd number of flow retarders are disposed within the delivery aperture of the delivery channel.
12. The deposition system of claim 1 , wherein the flow retarder has a non-uniform cross section.
13. The deposition system of claim 1 , further comprising a second solid flow retarder disposed within the delivery channel.
14. The deposition system of claim 1 , wherein the flow retarder has a width in the range 15-45 μm.
15. The deposition system of claim 1 , wherein the flow retarder has a width of not more than 135 μm.
16. The deposition system of claim 1 , wherein the solid flow retarder is disposed within 0-40 μm of the delivery aperture.
17. The deposition system of claim 16 , wherein the solid flow retarder is disposed within 5-30 μm of the delivery aperture at the closest point to the delivery aperture.
18. The deposition system of claim 1 , wherein the solid flow retarder has a width of at least 45 μm.
19. The deposition system of claim 1 , wherein the OVJP depositor has a width of not more than w≤285 μm measured from an outer edge of the first exhaust channel to an outer edge of the second exhaust channel in a straight line across the delivery channel.
20. The deposition system of claim 19 , wherein w≤135 μm.
21. The deposition system of claim 1 , wherein the material is Si.