Granted Patent B2

US 12,443,115 · App. 17/766,049 · Granted Oct 14, 2025

Inventors: Andre Bernardus Jeunink (De Lutte, NL); Erik Henricus Egidius Catharina Eummelen (Veldhoven, NL); Bearrach Moest (Eindhoven, NL); Derk Onck (Leende, NL); Johannes Adrianus Cornelis Maria Pijnenburg (Moergestel, NL); Hermen Folken Pen (Vught, NL)

Assignee: ASML Netherlands B.V.

G03F7/7085G03F1/84G03F7/70875

Abstract

Claims (34)

1. A method for determining surface parameters of a patterning device, the method comprising:

positioning the patterning device with respect to a path of an exposure radiation beam using a first measurement system and at a first focal plane of a chromatic lens arranged in a second measurement system;

illuminating a part of a surface of the patterning device with radiation through the chromatic lens, the radiation comprising a plurality of wavelengths;

determining a position of the illuminated part in a first and second direction;

collecting at least a portion of radiation reflected by the patterning device through the chromatic lens;

measuring, at a second focal plane of the chromatic lens, an intensity of the collected portion of radiation as a function of wavelength, to obtain spectral information;

determining the surface parameters of the patterning device at the determined position from the spectral information, and

maintaining a relative position of the chromatic lens with respect to the surface of the patterning device without movement during the measuring when obtaining the spectral information.

2. The method of claim 1 , further comprising:

repeating a plurality of times illuminating a part of a surface, determining a position of the illuminated part, collecting at least a portion of reflected radiation, measuring the intensity of the collected portion of radiation, and determining the surface parameters,

wherein a different part of the surface of the patterning device is illuminated for each repetition by moving the patterning device relative to the chromatic lens in at least the first or second direction.

3. The method of claim 2 , further comprising determining a surface parameter map of a patterned area at the patterning device.

4. A method for compensating a heating effect of the patterning device, comprising:

the method of claim 3 , further comprising:

calculating an expected shape change of the patterning device based on the determined surface parameter map and an exposure setting to be used for an exposure of a substrate, to determine an expected heating effect of the patterning device;

defining settings of a projection lens by means of a lens model to compensate for the expected shape change of the patterning device; and

applying the defined settings before and/or during the exposure.

5. The method of claim 4 , wherein the heating effect comprises aberrations.

6. The method of claim 2 , wherein the determining the surface parameters comprises at least determining an optical property at the illuminated part.

7. The method of claim 6 , wherein the determining the optical property comprises determining at least one of reflectivity, transmissivity, and absorption.

8. The method of claim 6 , further comprising determining an expected heating effect of the patterning device by using a heating model, with the optical property as an input.

9. The method of claim 2 , wherein the determining the surface parameters comprises determining at least an axial distance between the illuminated part and the chromatic lens in a third direction.

10. The method of claim 9 , further comprising determining a shape of the patterning device from the axial distance.

11. The method of claim 9 , further comprising generating a surface topography map of the patterning device using the axial distance as a function of the determined position.

12. A lithographic apparatus comprising:

a measurement system configured to characterize a patterning device, the measurement system comprising:

a radiation source configured to provide radiation with a plurality of wavelengths;

at least one chromatic lens, arranged in at least one chromatic confocal sensor, configured to illuminate an area of the patterning device with the provided radiation, and wherein the at least one chromatic lens is configured to collect at least a portion of the radiation reflected by the patterning device provided at a first focal plane of the at least one chromatic lens;

a detector configured at a second focal plane of the at least one chromatic lens, wherein the detector is configured to detect at least a portion of the collected radiation and to provide an intensity signal as a function of wavelength in response to the detected radiation; and

a processor configured to determine characteristics of the patterning device at the illuminated area,

wherein a relative position of the chromatic lens and a surface of the patterning device is constant and need not be changed to detect the portion of the collected radiation.

13. The lithographic apparatus of claim 12 , wherein a plurality of chromatic confocal sensors are configured to form an array of sensors.

14. The lithographic apparatus of claim 12 , wherein the characteristics of the patterning device are at least one of an optical property and an axial distance between the patterning device and the chromatic lens.

15. The lithographic apparatus of claim 12 , wherein a first chromatic lens is arranged at a first axial distance from the patterning device and a second chromatic lens is arranged at a second axial distance from the patterning device, with the second axial distance being different from the first axial distance.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (37)