Control system and control method for dual-gate bidirectional switch
View Patent ↗Current collapse of a normally-on type dual-gate bidirectional switch is suppressed. Dual-gate bidirectional switch includes first gate, first source, second gate, and second source. Control system includes first gate drive circuit, second gate drive circuit, and controller. Controller controls first gate drive circuit and second gate drive circuit. At the time of turning on dual-gate bidirectional switch and when the potential of first source is lower than the potential of second source, controller applies a first positive voltage for a first period between first gate and first source from first gate drive circuit, and applies a voltage smaller than the first positive voltage after the first period has elapsed.
1. A control system for a dual-gate bidirectional switch of a normally-on type, the dual-gate bidirectional switch including a first gate, a first source corresponding to the first gate, a second gate, and a second source corresponding to the second gate, the control system comprising:
a first gate drive circuit connected between the first gate and the first source;
a second gate drive circuit connected between the second gate and the second source; and
a controller that controls the first gate drive circuit and the second gate drive circuit, wherein
the controller is configured to, at a time of turning on the dual-gate bidirectional switch and when a potential of the first source is lower than a potential of the second source, apply a first positive voltage between the first gate and the first source from the first gate drive circuit for a first period, and apply a voltage smaller than the first positive voltage after the first period has elapsed,
the dual-gate bidirectional switch further includes:
a substrate,
a first nitride semiconductor layer disposed on the substrate,
a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap larger than a bandgap of the first nitride semiconductor layer,
a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode, which are disposed on the second nitride semiconductor layer,
a first p-type layer interposed between the first gate electrode and the second nitride semiconductor layer, and
a second p-type layer interposed between the second gate electrode and the second nitride semiconductor layer,
the first gate includes the first gate electrode and the first p-type layer,
the second gate includes the second gate electrode and the second p-type layer,
the first gate drive circuit includes:
a first series circuit connected between the first gate and the first source and including:
a positive power supply,
a first switch,
a capacitor, and
a first resistor, and
a second resistor connected in parallel to a series circuit of the capacitor and the first resistor,
the first resistor has a resistance value smaller than a resistance value of the second resistor, and
the controller controls the first switch.
2. The control system according to claim 1 , wherein the controller is configured to, at the time of turning on the dual-gate bidirectional switch and when the potential of the first source is lower than the potential of the second source, apply a second positive voltage between the second gate and the second source from the second gate drive circuit for a second period, and apply a voltage smaller than the second positive voltage after the second period has elapsed.
3. The control system according to claim 2 , wherein the controller is configured to, at the time of turning on the dual-gate bidirectional switch and when the potential of the second source is higher than the potential of the first source, start application of the second positive voltage between the second gate and the second source from the second gate drive circuit, and thereafter, start application of the first positive voltage within the second period between the first gate and the first source from the first gate drive circuit.
4. The control system according to claim 1 , wherein the controller is configured to match, at the time of turning on the dual-gate bidirectional switch, a timing of applying the first positive voltage between the first gate and the first source from the first gate drive circuit with
a timing of starting application of a voltage higher than a threshold voltage between the second gate and the second source from the second gate drive circuit.
5. The control system according to claim 1 , wherein the controller is configured to, at the time of turning on the dual-gate bidirectional switch and when the potential of the first source is lower than the potential of the second source, start application of the first positive voltage between the first gate and the first source from the first gate drive circuit, and thereafter, start application of a voltage higher than a threshold voltage between the second gate and the second source from the second gate drive circuit within the first period.
6. The control system according to claim 1 , wherein
the first gate drive circuit includes
a second series circuit connected between the first gate and the first source and including a negative power supply, a second switch, and a third resistor.
7. The control system according to claim 1 , wherein
the first gate drive circuit includes
a second series circuit of a negative power supply and a second switch, the second series circuit being connected in parallel to the first series circuit of the positive power supply and the first switch.
8. The control system according to claim 1 , wherein
the first series circuit further includes a first diode,
the first gate drive circuit further includes:
a second series circuit of a negative power supply and a second switch, the second series circuit being connected in parallel to the first series circuit of the positive power supply and the first switch,
a second resistor connected in parallel to the first series circuit of the first diode, the capacitor, and the first resistor, and
a third series circuit including a second diode and a third resistor, the series circuit being connected in parallel to the first series circuit of the first diode, the capacitor, and the first resistor,
the first diode has an anode connected to a positive electrode of the positive power supply and a negative electrode of the negative power supply,
the second diode has a cathode connected to a positive electrode of the positive power supply and a negative electrode of the negative power supply, and
the third resistor has a resistance value smaller than the resistance value of the second resistor.
9. A control system for a dual-gate bidirectional switch of a normally-on type, the dual-gate bidirectional switch including a first gate, a first source corresponding to the first gate, a second gate, and a second source corresponding to the second gate, the control system comprising:
a first gate drive circuit connected between the first gate and the first source;
a second gate drive circuit connected between the second gate and the second source; and
a controller that controls the first gate drive circuit and the second gate drive circuit, wherein
the controller is configured to, at a time of turning on the dual-gate bidirectional switch and when a potential of the first source is lower than a potential of the second source, apply a first positive voltage between the first gate and the first source from the first gate drive circuit for a first period, and apply a voltage smaller than the first positive voltage after the first period has elapsed,
the dual-gate bidirectional switch includes
a substrate,
a first nitride semiconductor layer disposed on the substrate,
a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap larger than a bandgap of the first nitride semiconductor layer,
a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode, which are disposed on the second nitride semiconductor layer,
a first p-type layer interposed between the first gate electrode and the second nitride semiconductor layer, and
a second p-type layer interposed between the second gate electrode and the second nitride semiconductor layer,
the first gate includes the first gate electrode and the first p-type layer,
the second gate includes the second gate electrode and the second p-type layer,
the first gate drive circuit includes:
a first series circuit connected between the first gate and the first source and including:
a negative power supply,
a first switch,
a capacitor, and
a first resistor,
a second resistor connected in parallel to a series circuit of the capacitor and the first resistor, and
a second switch connected in parallel to a series circuit of the negative power supply and the first switch,
the first resistor has a resistance value smaller than a resistance value of the second resistor, and
the controller controls the first switch and the second switch.
10. The control system according to claim 9 , wherein
the first gate drive circuit includes
a third resistor connected between the first gate and the first source.
11. The control system according to claim 9 , wherein
the first gate drive circuit includes
the first gate drive circuit further includes a clamp circuit connected between the first gate and the first source and configured to clamp a voltage between the first gate and the first source.
12. The control system according to claim 9 , wherein
the first series circuit further includes a first diode,
the first gate drive circuit further includes:
a second series circuit of a second diode and a second resistor, the second series circuit being connected in parallel to the first series circuit of the first diode and the first resistor, and
a third resistor connected in parallel to the first series circuit of the capacitor, the first diode, and the first resistor,
the first diode has an anode connected to the capacitor,
the second diode has a cathode connected to the capacitor, and
the first gate drive circuit further includes a clamp circuit connected between the first gate and the first source and configured to clamp a voltage between the first gate and the first source.
13. The control system according to claim 12 , wherein
the clamp circuit includes
a Zener diode, and
a diode, and
the Zener diode has an anode connected to the first gate,
the diode has a cathode connected to a cathode of the Zener diode, and
the diode has an anode connected to the first source.
14. The control system according to claim 13 , wherein
the first gate drive circuit further includes a third series circuit of a third diode and a fourth resistor, the third series circuit being connected in parallel to the first series circuit of the capacitor, the second diode, and the second resistor, and
the third diode has a cathode connected to the capacitor.
15. The control system according to claim 9 , wherein
the first series circuit further includes a first diode,
the first gate drive circuit further includes:
a second series circuit of a second diode and a second resistor, the series circuit being connected in parallel to the first series circuit of the first diode and the first resistor, and
a third resistor connected in parallel to the first series circuit of the capacitor, the first diode, and the first resistor,
the first diode has an anode connected to the capacitor,
the second diode has a cathode connected to the capacitor, and
the first gate drive circuit further includes a clamp circuit connected in parallel to the first series circuit of the capacitor, the first diode, and the first resistor.
16. A control system for a unidirectional switching element having a gate, a source, and a drain, the control system comprising:
a gate drive circuit; and
a controller that controls the gate drive circuit, wherein
the unidirectional switching element is a single-gate field effect transistor of a normally-on type,
the single-gate field effect transistor includes
a substrate,
a first nitride semiconductor layer disposed on the substrate,
a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap larger than a bandgap of the first nitride semiconductor layer,
a source electrode, a gate electrode, and a drain electrode disposed on the second nitride semiconductor layer, and
a p-type layer interposed between the gate electrode and the second nitride semiconductor layer,
the gate includes the gate electrode and the p-type layer,
the source includes the source electrode,
the drain includes the drain electrode,
the gate drive circuit is connected between the gate and the source, and
the controller is configured to, at a time of turning on the unidirectional switching element and when a potential of the source is lower than a potential of the drain, apply a first positive voltage between the gate and the source from the gate drive circuit for a first period, and apply a voltage smaller than the first positive voltage after the first period has elapsed.