Display device and electronic apparatus
Provided is a display device including a substrate including a first display area, a second display area including transmission areas, and a non-display area, main pixel electrodes above the first display area, auxiliary pixel electrodes above the second display area, and a shield layer between the substrate and the auxiliary pixel electrodes, including a first metal layer, and at least one reflection reduction layer overlapping the first metal layer, and defining an opening overlapping the transmission areas.
1. A display device comprising:
a substrate comprising a first display area, a second display area comprising transmission areas, and a non-display area;
main pixel electrodes above the first display area;
auxiliary pixel electrodes above the second display area;
auxiliary emission layers respectively above the auxiliary pixel electrodes;
auxiliary counter electrodes respectively above the auxiliary emission layers; and
a shield layer between the substrate and the auxiliary pixel electrodes, overlapping an entirety of the auxiliary counter electrodes, defining openings respectively overlapping the transmission areas, and comprising:
a first metal layer; and
at least one reflection reduction layer overlapping the first metal layer, and comprising:
a second metal layer under the first metal layer, and having a thickness in a thickness direction that is perpendicular to an upper surface of the substrate of about 10 nm or less; and
an inorganic material layer comprising a retarder between the first metal layer and the second metal layer.
2. The display device of claim 1 , wherein the at least one reflection reduction layer comprises a light-absorbing layer between the first metal layer and the substrate, and having a light absorption rate that is greater than a light absorption rate of the first metal layer.
3. The display device of claim 2 , wherein the light-absorbing layer comprises amorphous silicon.
4. The display device of claim 2 , wherein, when viewed in the thickness direction, an edge of the first metal layer is aligned with an edge of the light-absorbing layer.
5. The display device of claim 1 , wherein the thickness of the second metal layer in the thickness direction is less than a thickness of the first metal layer in the thickness direction.
6. The display device of claim 5 , wherein the first metal layer and the second metal layer comprise a same material.
7. The display device of claim 1 , wherein the at least one reflection reduction layer further comprises a light-absorbing layer between the first metal layer and the inorganic material layer, and having a light absorption rate that is greater than a light absorption rate of the first metal layer.
8. The display device of claim 7 , wherein the light-absorbing layer comprises amorphous silicon.
9. The display device of claim 7 , wherein, when viewed in the thickness direction, an edge of the first metal layer is aligned with an edge of the light-absorbing layer and with an edge of the inorganic material layer.
10. An electronic apparatus comprising:
a display panel comprising a first display area, a second display area comprising transmission areas, and a non-display area; and
a component overlapping the second display area,
wherein the display panel comprises:
a substrate;
main pixel electrodes above the first display area;
auxiliary pixel electrodes above the second display area;
auxiliary emission layers respectively above the auxiliary pixel electrodes;
auxiliary counter electrodes respectively above the auxiliary emission layers; and
a shield layer between the substrate and the auxiliary pixel electrodes, overlapping an entirety of the auxiliary counter electrodes, defining openings respectively overlapping the transmission areas, and comprising a first metal layer, and at least one reflection reduction layer overlapping the first metal layer and comprising:
a second metal layer under the first metal layer, and having a thickness in a thickness direction that is perpendicular to an upper surface of the substrate of about 10 nm or less; and
an inorganic material layer comprising a retarder between the first metal layer and the second metal layer.
11. The electronic apparatus of claim 10 , wherein the at least one reflection reduction layer comprises a light-absorbing layer between the first metal layer and the substrate, and having a light absorption rate that is greater than a light absorption rate of the first metal layer.