Top contact on resistive random access memory
A memory device including a trench to a first electrically conductive structure; a first electrode of a conformal electrically conductive material contained within the trench in electrical communication with the first electrically conductive structure and is present on sidewalls of the trench; a switching layer is present in the trench on the first electrode and extends outside the trench; and a second electrode present on the switching layer overfilling the trench. The memory device also includes a contact positioned on a portion of the second electrode that is overfilling the trench to provide that the contact is horizontally offset from the first electrode that is present in the trench.
1. A memory device comprising:
a trench to a first electrically conductive structure;
a first electrode of a conformal electrically conductive material contained within the trench in electrical communication with the first electrically conductive structure and is present on sidewalls of the trench;
a switching layer is present in the trench on the first electrode and extends outside the trench;
a second electrode present on the switching layer overfilling the trench; and
a contact positioned on a portion of the second electrode that is overfilling the trench to provide that the contact is horizontally offset from the first electrode that is present in the trench.
2. The memory device of claim 1 , wherein the memory device is a resistive random access memory (ReRAM).
3. The memory device of claim 1 , wherein the first electrode has a U-shaped geometry when viewed from a side cross-section.
4. The memory device of claim 1 , wherein an upper surface of the first electrode that is present on the sidewalls of the trench is coplanar with the upper surface of the trench.
5. The memory device of claim 1 , wherein the switching layer has a composition selected from the group consisting of hafnium oxide (HfO2), tantalum oxide (Ta2O5), titanium oxide (TiO2), tungsten oxide (WO3), zirconium oxide (ZrO2), aluminum oxide (Al2O3), strontium titanium oxide (SrTiO3) and combinations thereof.
6. The memory device of claim 1 , wherein a portion of the switching layer extends outside the trench, and a portion of the second electrode overfilling the trench provide an extension portion of the switching layer and second electrode for a landing point for the contact.
7. A memory device comprising:
a trench to a first electrically conductive structure;
a first electrode of an electrically conductive material present at a base of the trench in electrical communication with the first electrically conductive structure;
a switching layer of a conformal material present in the trench on the first electrode, the switching layer present on sidewalls of the trench and the switching layer extending outside the trench;
a second electrode is present on the switching layer overfilling the trench; and
a contact positioned on a portion of the second electrode that is overfilling the trench to provide that the contact is horizontally offset from the first electrode that is present in the trench.
8. The memory device of claim 7 , wherein the memory device is a resistive random access memory (ReRAM).
9. The memory device of claim 7 , wherein no portion of the first electrode extends beyond the first ¼ of the height of the trench.
10. The memory device of claim 7 , wherein the switching layer is in direct contact with the sidewalls of the trench.
11. The memory device of claim 7 , wherein the switching layer has a composition selected from the group consisting of hafnium oxide (HfO2), tantalum oxide (Ta2O5), titanium oxide (TiO2), tungsten oxide (WO3), zirconium oxide (ZrO2), aluminum oxide (Al2O3), strontium titanium oxide (SrTiO3) and combinations thereof.
12. The memory device of claim 7 , wherein a portion of the switching layer extends outside the trench, and a portion of the second electrode overfilling the trench provide an extension portion of the switching layer and second electrode for a landing point for the contact.