Granted Patent B2

US 12,448,701 · App. 17/903,196 · Granted Oct 21, 2025

Inventors: Kenta Takao (Tokyo, JP); Daiki Furukawa (Tokyo, JP); Kenya Tanaka (Tokyo, JP); Mai Abe (Tokyo, JP); Takashi Hasegawa (Tokyo, JP); Toru Umeno (Tokyo, JP)

Assignee: PROTERIAL, LTD.

C30B15/14C30B15/20C30B29/36

Abstract

Claims (12)

1. A single crystal manufacturing method comprising the steps of:

(a) by moving a shaft having a seed crystal attached to its tip downward, bringing a lower surface of the seed crystal into contact with a solution including carbon and silicon contained in a crucible; and

(b) growing a single crystal made of silicon carbide on the lower surface of the seed crystal, wherein the step (b) includes:

(c1) a first heating step of heating the solution so that a temperature of the solution in contact with a side surface of the crucible becomes higher than a temperature of the solution in contact with a bottom surface of the crucible; and

(c2) a second heating step of heating the solution so that a temperature of the solution in contact with the bottom surface of the crucible becomes higher than a temperature of the solution in contact with the side surface of the crucible,

wherein the first heating step and the second heating step are alternately switched, and

wherein in both the first heating step and the second heating step, the single crystal grows on the lower surface of the seed crystal.

2. The single crystal manufacturing method according to claim 1 ,

wherein, in the first heating step, the temperature of the solution in contact with the side surface of the crucible is a temperature at which a miscellaneous crystal present in the solution and on the side surface dissolves, and the temperature of the solution in contact with the bottom surface of the crucible is a temperature at which a miscellaneous crystal present in the solution and on the bottom surface precipitates, and,

in the second heating step, the temperature of the solution in contact with the bottom surface of the crucible is a temperature at which a miscellaneous crystal present in the solution and on the bottom surface dissolves, and the temperature of the solution in contact with the side surface of the crucible is a temperature at which a miscellaneous crystal present in the solution and on the side surface precipitates.

3. The single crystal manufacturing method according to claim 1 ,

wherein the first heating step and the second heating step are alternately switched at a preset time interval.

Assignments (2)

Priority Claims (3)

Continuity (1)

References Cited (11)