IP Library › Granted Patent US 12,449,570
Granted Patent B2
US 12,449,570 · App. 17/792,470 · Granted Oct 21, 2025

Pattern film, method for manufacturing pattern film, and transmittance variable device comprising same

Inventors: Cheolock Song (Daejeon, KR); Han Min Seo (Daejeon, KR); Nam Seok Bae (Daejeon, KR); Jiehyun Seong (Daejeon, KR); Seung Heon Lee (Daejeon, KR); Minjun Gim (Daejeon, KR)
Assignee: LG Chem, Ltd.
G02B5/003
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,449,570
App. No.
17/792,470
Granted
Oct 21, 2025
Kind
B2
Abstract

A pattern film, a method for manufacturing a pattern film, and a transmittance variable device comprising the same are disclosed herein. In some embodiments, a pattern film includes a base layer, and a spacer pattern formed on the base layer, the spacer pattern comprises a partition wall spacer comprises a plurality of spacer dots and a spacer line connecting the spacer dots, and a ball spacer, the ball spacer is one of embedded in, partially embedded in, or in contact with the partition wall spacer, when any 3 or more spacer dots are selected, the spacer line forms a closed figure having the selected spacer dots at the vertices thereof, the selected spacer dots are not present inside the closed figure, a length of at least one side of the closed figure is different from lengths of the remaining sides, and each spacer dot has irregularity of 50% or greater.

Claims (37)

1. A pattern film, comprising:

a base layer; and

a spacer pattern formed on the base layer,

wherein the spacer pattern comprises a partition wall spacer and a ball spacer,

wherein the partition wall spacer comprises a plurality of spacer dots and a spacer line connecting the spacer dots,

wherein the ball spacer is one of embedded in, partially embedded in, or in contact with the partition wall spacer,

wherein, when any 3 or more spacer dots are selected among the plurality of spacer dots, the spacer line forms a closed figure having the selected spacer dots at the vertices thereof, wherein the selected spacer dots are not present inside the closed figure,

wherein a length of at least one side of the closed figure is different from the lengths of the remaining sides,

wherein each spacer dot in the plurality has irregularity of 50% or greater,

wherein a rectangular 200×200 pixel area is set based on an area of the pattern film through which light passes from an LED light source, and

wherein, using a lower left end corner of the rectangular 200×200 pixel area as x axis, y axis (0,0), the rectangular 200×200 pixel area of (0,0) to (200,200) satisfies the following Equation 3:

2≤ D 1− D 2(%)≤10  [Equation 3]

in Equation 3, D1 is a diffraction ratio when the spacer dot of the pattern film has irregularity of 0%; D2 is a diffraction ratio when the spacer dot of the pattern film has irregularity of 70%; and each diffraction ratio satisfies the following Equation 4:

[1− Sc/S ]×100(%)  [Equation 4]

in Equation 4, S is a total amount of light in the rectangular 200×200 pixel area of (0,0) to (200,200); and Sc is an amount of pixel light in an area having pixels employing (100,100) as an origin and having a radius of 50 in the rectangular 200×200 pixel area of (0,0) to (200,200).

2. The pattern film of claim 1 , wherein a line width (T) of the partition wall of the partition wall spacer and an average particle diameter (D) of the ball spacer satisfy the following Equation 1:

1.0≤ T/D≤ 20  [Equation 1].

3. The pattern film of claim 1 , wherein the base layer is an inorganic base layer or an organic base layer.

4. The pattern film of claim 1 , wherein the spacer pattern has optical density of 0.4 or greater and 4 or less.

5. The pattern film of claim 1 , wherein the spacer pattern has a line width of 10 μm or greater and 200 μm or less.

6. The pattern film of claim 1 , wherein a total area (A) of the base layer and an area (B) of the surface of the base layer in contact with the spacer pattern satisfy the following Equation 2:

5≤[ B/A ]×100(%)≤30  [Equation 2].

7. The pattern film of claim 1 , wherein an average value of a height of the partition wall spacer is 2 μm or greater and 100 μm or less, and a standard deviation of the height of the partition wall spacer is 0.05 μm or greater and 0.5 μm or less.

8. The pattern film of claim 1 , wherein a standard deviation of a particle diameter of the ball spacer is 0.8 μm or less.

9. The pattern film of claim 1 , wherein less than 85% of the sides of the closed figure have the same length.

10. A method for manufacturing the pattern film of claim 1 , the method comprising:

forming an ultraviolet curable resin layer comprising a ball spacer on one surface of a base layer;

laminating a film mask on the ultraviolet curable resin layer;

irradiating the ultraviolet curable resin layer with ultraviolet light through the film mask;

peeling the film mask from the ultraviolet curable resin layer after the irradiation; and

peeling an uncured area of the ultraviolet curable resin layer after the irradiation.

11. A transmittance variable device, comprising:

the pattern film of claim 1 ; and

a substrate disposed opposite to the pattern film,

wherein the base layer of the pattern film and the substrate are separated by a space, and

wherein the space is maintained by the spacer pattern of the pattern film.

12. The transmittance variable device of claim 11 , comprising an adhesive layer disposed between the pattern film and the substrate, wherein the adhesive layer has a vertical alignment force.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2022
From: SONG, CHEOLOCK; SEO, HAN MIN; BAE, NAM SEOK; SEONG, JIEHYUN; LEE, SEUNG HEON; GIM, MINJUN
To: LG CHEM, LTD.
Reel/Frame 060504/0588 →
Priority Claims (1)
KR 10-2020-0019601 · Feb 18, 2020 · national
Continuity (1)
Related Publication 20230059263A1 · Feb 23, 2023
References Cited (38)
US 4396250A · Wada et al. · 1983 [cited by applicant]
US 7936437B2 · Hong et al. · 2011 [cited by applicant]
US 8891156B2 · Yang et al. · 2014 [cited by applicant]
US 9035198B2 · Hwang et al. · 2015 [cited by applicant]
US 10509273B2 · You et al. · 2019 [cited by applicant]
US 11338499B2 · Song et al. · 2022 [cited by applicant]
US 11874564B2 · Song · 2024 [cited by examiner]
US 20130069258A1 · Ballet et al. · 2013 [cited by applicant]
US 20200150478A1 · Seo et al. · 2020 [cited by applicant]
US 20200159058A1 · Song et al. · 2020 [cited by applicant]
US 20200362623A1 · Bae et al. · 2020 [cited by applicant]
EP 0022311A1 · 1981 [cited by applicant]
JP 2002014772A · 2002 [cited by applicant]
JP 2002148636A · 2002 [cited by applicant]
JP 2008170633A · 2008 [cited by applicant]
JP 2013530423A · 2013 [cited by applicant]
JP 2015508910A · 2015 [cited by applicant]
JP 202024267A · 2020 [cited by applicant]
KR 20080081426A · 2008 [cited by applicant]
KR 101273890B1 · 2013 [cited by applicant]
KR 101367135B1 · 2014 [cited by applicant]
KR 101379963B1 · 2014 [cited by applicant]
KR 101432574B1 · 2014 [cited by applicant]
KR 20160100575A · 2016 [cited by applicant]
KR 20160146566A · 2016 [cited by applicant]
KR 20170024745A · 2017 [cited by applicant]
KR 20190019843A · 2019 [cited by applicant]
KR 20190122579A · 2019 [cited by applicant]
KR 102068304B1 · 2020 [cited by applicant]
TW 201348832A · 2013 [cited by applicant]
WO 2011144852A1 · 2011 [cited by applicant]
WO 2015008758A1 · 2015 [cited by applicant]
WO 2019022564A1 · 2019 [cited by applicant]
WO 2019022565A1 · 2019 [cited by applicant]
Lee et al. , KR10-1273890B, machine translation, Aug. 2007 (Year: 2007). [cited by examiner]
Song et al. KR20190019843A, machine translation 2019 (Year: 2019). [cited by examiner]
Yu, KR10-2016-0146566, machine-translation, Dec. 2016 (Year: 2016). [cited by examiner]
International Search Report for Application No. PCT/KR2021/001474 mailed May 25, 2021, pp. 1-4. [cited by applicant]