IP Library Granted Patent US 12,451,317
Granted Patent B2
US 12,451,317 · App. 19/041,182 · Granted Oct 21, 2025

Reducing an electron emission of an electron emitter

Inventors: Michael Wimmer (Weisendorf, DE); Joerg Freudenberger (Kalchreuth, DE); Anja Fritzler (Erlangen, DE); Christoph Jud (Nuremberg, DE); Peter Geithner (Erlangen, DE)
Assignee: SIEMENS HEALTHINEERS AG
H01J35/045H01J35/064
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,451,317
App. No.
19/041,182
Granted
Oct 21, 2025
Kind
B2
Abstract

A method for reducing electron emission of an electron emitter comprises: emitting electrons from a first current path via at least one first field effect emitter element, subject to an emission voltage between a gate electrode and an emission surface; determining a property of the first current path; and activating a first current limiting unit subject to the properties of the first current path to reduce the electron emission of the electron emitter.

Claims (38)

1. A method for reducing electron emission of an electron emitter, wherein the electron emitter includes a plurality of field effect emitter elements, a gate electrode and a first current limiting unit, wherein the plurality of field effect emitter elements are aligned in parallel to form an emission surface on a top of the plurality of field effect emitter elements, wherein the gate electrode is arranged above the emission surface, wherein the first current limiting unit and at least one first field effect emitter element of the plurality of field effect emitter elements are part of a first current path, wherein the at least one first field effect emitter element is electrically connected between the first current limiting unit and the gate electrode in the first current path, and wherein the method comprises:

emitting electrons from the first current path via the at least one first field effect emitter element, subject to a first emission voltage between the gate electrode and the emission surface;

determining properties of the first current path; and

activating the first current limiting unit subject to the properties of the first current path, to reduce the electron emission of the electron emitter.

2. The method as claimed in claim 1 , wherein the properties are determined before the electron emission.

3. The method as claimed in claim 2 , wherein the determining properties comprises:

determining a geometric form of the at least one first field effect emitter element relative to the emission surface; and

assigning an electrical potential to the geometric form.

4. The method as claimed in claim 3 , wherein the activating the first current limiting unit comprises:

applying the electrical potential to a first potential-regulating electrode of the first current limiting unit to reduce the first emission voltage relative to the at least one first field effect emitter element.

5. The method as claimed in claim 4 , wherein the electrical potential corresponds to a gate potential for zeroing the first emission voltage.

6. The method as claimed in claim 3 , wherein, after activating the first current limiting unit, the method comprises:

emitting electrons from a second current path via a second field effect emitter element, subject to a second emission voltage between the gate electrode and the emission surface, wherein

the second field effect emitter element is part of the second current path.

7. The method as claimed in claim 6 , wherein during electron emission, the first emission voltage is different from the second emission voltage.

8. The method as claimed in claim 1 , wherein the properties are determined after electron emission has started.

9. The method as claimed in claim 8 , wherein the determining properties comprises:

checking the first current path for a short circuit.

10. The method as claimed in claim 9 , wherein, in the event of the short circuit, activating the first current limiting unit comprises:

reducing the first emission voltage; and

emitting a short circuit signal.

11. The method as claimed in claim 9 , wherein, in the event of the short circuit, the activating the first current limiting unit comprises:

triggering a circuit breaker of the first current limiting unit to interrupt the first current path irreversibly.

12. The method as claimed in claim 11 , wherein, after activation of the first current limiting unit, the method comprises:

emitting electrons from a second current path via a second field effect emitter element, subject to a second emission voltage between the gate electrode and the emission surface, wherein

the second field effect emitter element is part of the second current path.

13. An electron emitter configured to perform a method as claimed in claim 1 .

14. An X-ray source, comprising:

a cathode device having an emitter seat and an electron emitter as claimed in claim 13 ;

an anode; and

an evacuated housing; wherein

the electron emitter, the emitter seat, and the anode are arranged within the evacuated housing.

15. A non-transitory computer-readable storage medium storing computer-executable instructions that, when executed at a processing unit of an electron emitter, cause the electron emitter to perform a method as claimed in claim 1 .

16. The method as claimed in claim 4 , wherein, after activating the first current limiting unit, the method comprises:

emitting electrons from a second current path via a second field effect emitter element, subject to a second emission voltage between the gate electrode and the emission surface, wherein

the second field effect emitter element is part of the second current path.

17. The method as claimed in claim 10 , wherein, in the event of the short circuit, the activating the first current limiting unit comprises:

triggering a circuit breaker of the first current limiting unit to interrupt the first current path irreversibly.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 28, 2025
From: WIMMER, MICHAEL; FREUDENBERGER, JÖRG; FRITZLER, ANJA; JUD, CHRISTOPH; GEITHNER, PETER
To: SIEMENS HEALTHINEERS AG
Reel/Frame 070955/0416 →
Priority Claims (1)
DE 10 2024 200 886.9 · Jan 31, 2024 · national
Continuity (1)
Related Publication 20250246393A1 · Jul 31, 2025
References Cited (16)
US 5075595A · Kane · 1991 [cited by applicant]
US 9748071B2 · Guerrera et al. · 2017 [cited by applicant]
US 10741353B2 · Kenmotsu et al. · 2020 [cited by applicant]
US 20070252528A1 · Vermuelen · 2007 [cited by examiner]
US 20080067912A1 · Ishida · 2008 [cited by examiner]
US 20080069420A1 · Zhang · 2008 [cited by examiner]
US 20100226479A1 · Beyerlein et al. · 2010 [cited by applicant]
US 20110038460A1 · Grasruck · 2011 [cited by examiner]
US 20210410258A1 · Jafari et al. · 2021 [cited by applicant]
DE 102009011642A1 · 2010 [cited by applicant]
EP 3933881A1 · 2022 [cited by applicant]
EP 3075000B1 · 2024 [cited by applicant]
WO WO2013136299A1 · 2013 [cited by applicant]
German Office Action and English translation thereof for German Application No. 10 2024 200 886.9 mailed Sep. 25, 2024. [cited by applicant]
German Decision to Grant and English translation thereof for German Application No. 10 2024 200 886 mailed Apr. 3, 2025. [cited by applicant]
Asadi R.F. et al.:“Failure Mode of Si Field Emission Arrays based on Emission Pattern Analysis,” 2021 34th International Vacuum Nanoelectronics Conference (IVNC), Lyon, France, 2021, pp. 1-2. [cited by applicant]