Semiconductor device

1. A semiconductor device comprising:

a first chip including a substrate, the substrate including a first region, and a second region provided to surround an outer periphery of the first region; and

a second chip bonded to the first chip, the second chip including a plurality of word lines provided to be separated from one another in a first direction intersecting a surface of the substrate in the first region, and an insulating layer provided in the second region and divided by a first sealing portion in the second region, wherein

the first sealing portion is provided to extend at least from above the substrate to a height of an upper end of the insulating layer and surround the outer periphery of the first region in the second region,

the first sealing portion includes a first conductive member including a first void,

the first conductive member is provided to extend in the first direction at a height where the plurality of word lines are provided, and have a perfect ring shape surrounding the outer periphery of the first region in a plan view, and

the first sealing portion further includes a first pad portion on a bonded surface between the first chip and the second chip, the first pad portion having a perfect ring shape surrounding the outer periphery of the first region in a plan view.

2. The semiconductor device of claim 1 , wherein

the first conductive member includes a first conductor provided to surround the outer periphery of the first region, the first conductor including the first void,

the first conductor has a first width at a first height, has a second width wider than the first width at a second height higher than the first height, and has a third width narrower than the second width at a third height higher than the second height, along a second direction parallel to the surface of the substrate, and

a part of the first void is included at the second height of the first conductor.

3. The semiconductor device of claim 1 , wherein

the first sealing portion further includes a second conductive member provided on the substrate.

4. The semiconductor device of claim 3 , wherein

the substrate includes a P-type or N-type impurity diffusion region at a portion in contact with the second conductive member.

5. The semiconductor device of claim 1 , wherein

the insulating layer is further divided by a second sealing portion in the second region on a side further inward than the first sealing portion, the second sealing portion being provided to extend at least from above the substrate to the height of the upper end of the insulating layer and surround the outer periphery of the first region in the second region,

the second sealing portion includes a third conductive member provided to extend in the first direction at the height where the plurality of word lines are provided,

the first conductive member includes a first conductor provided to surround the outer periphery of the first region, the first conductor including the first void,

the third conductive member includes a second conductor provided to surround the outer periphery of the first region at a height approximately same as a height of the first conductor,

a width of the first conductor in a second direction parallel to the surface of the substrate is narrower than a width of the second conductor in the second direction, and

the third conductive member further includes a third conductor provided on the second conductor, a height of a lower end of the third conductor being approximately aligned with a height of a lower end of each of the first conductor and the second conductor.

6. The semiconductor device of claim 1 , wherein

the first sealing portion includes a first layer and a second layer arranged in the first direction,

the first layer is composed of an insulator, and

the second layer is composed of a void.

7. The semiconductor device of claim 1 , wherein

the first sealing portion includes a first layer, a second layer, and a third layer arranged in the first direction,

any one of the first layer, the second layer, and the third layer is composed of an insulator,

any one of the first layer, the second layer, and the third layer is composed of a void, and

any one of the first layer, the second layer, and the third layer includes a conductor.

8. The semiconductor device of claim 1 , wherein

the second chip further includes a pillar provided to extend in the first direction and penetrate the word lines in the first region, intersections between the pillar and the word lines each functioning as a memory cell, and

a height of a lower end of the first void is lower than a height of a lower end of the pillar.

9. The semiconductor device of claim 1 , wherein

the insulating layer is further divided by a third sealing in the second region on a side further inward than the first sealing portion, the third sealing portion being provided to extend at least from above the substrate to the height of the upper end of the insulating layer and surround the outer periphery of the first region, in the second region, and

the third sealing portion includes a second void.

10. The semiconductor device of claim 9 , wherein

a height of an upper end of the second void is higher than a height of an upper end of the first void, and/or a height of a lower end of the second void is higher than a height of a lower end of the first void.

11. The semiconductor device of claim 9 , wherein

the third sealing portion includes a fourth conductive member including the second void,

the fourth conductive member is provided to extend in the first direction at the height where the plurality of word lines are provided, and have a perfect ring shape surrounding the outer periphery of the first region in a plan view, and

the third sealing portion includes a second pad portion on the bonded surface, the second pad portion having a perfect ring shape surrounding the outer periphery of the first region in a plan view.

12. The semiconductor device of claim 11 , wherein

the first sealing portion further includes a fifth conductive member provided on the substrate, and

the third sealing portion further includes a sixth conductive member provided on the substrate.

13. The semiconductor device of claim 11 , wherein

the first conductive member includes a first conductor provided to surround the outer periphery of the first region, the first conductor including the first void,

the fourth conductive member includes a fourth conductor provided to surround the outer periphery of the first region at a height approximately same as a height of the first conductor, the fourth conductor including the second void, and

a height of an upper end of the second void is higher than a height of an upper end of the first void, and/or a height of a lower end of the second void is higher than a height of a lower end of the first void.

14. The semiconductor device of claim 13 , wherein

a width of a lower end of the first conductor in a second direction parallel to the surface of the substrate is wider than a width of a lower end of the fourth conductor in the second direction.

15. The semiconductor device of claim 11 , wherein

the second chip further includes a pillar provided to extend in the first direction and penetrate the word lines in the first region, intersections between the pillar and the word lines each functioning as a memory cell, and

the height of the lower end of the second void is lower than a height of a lower end of the pillar.

16. The semiconductor device of claim 1 , wherein

the first chip further includes a transistor provided on the substrate in the first region,

the second chip further includes a source line provided above the word lines, a pillar provided to extend in the first direction and penetrate the word lines in the first region, and a contact coupled to a first word line among the word lines from below,

an upper end of the pillar being is in contact with the source line,

intersections between the pillar and the word lines each function as a memory cell, and

the transistor is electrically coupled to the first word line via the second contact.

17. The semiconductor device of claim 16 , wherein

the first chip further includes a first conductive layer,

the second chip further includes a second conductive layer coupled in series between the transistor and the contact,

the second conductive layer is provided on the first conductive layer,

the second conductive layer has a tapered shape, and

the first conductive layer has a reverse tapered shape.