Semiconductor device
A small-size semiconductor device is provided. The semiconductor device includes a first layer, a second layer, and a third layer formed over a substrate. A first transistor included in the first layer includes a first semiconductor layer containing Si. A second transistor included in the second layer includes a second semiconductor layer containing Ga. A third transistor included in the third layer includes a third semiconductor layer containing at least one of In and Zn. The first semiconductor layer of the first transistor is formed using the substrate. The second semiconductor layer of the second transistor is formed using a crystal obtained by crystal growth over the substrate. The third semiconductor layer of the third transistor is formed above the first semiconductor layer and the second semiconductor layer.
1. A semiconductor device comprising:
a first layer, a second layer, and a third layer over a substrate,
wherein a first transistor included in the first layer comprises a first semiconductor layer comprising Si,
wherein a second transistor included in the second layer comprises a second semiconductor layer comprising Ga,
wherein a third transistor included in the third layer comprises a third semiconductor layer comprising at least one of In and Zn,
wherein the first semiconductor layer of the first transistor is formed using the substrate,
wherein the second semiconductor layer of the second transistor is formed using a crystal obtained by crystal growth over the substrate, and
wherein the third semiconductor layer of the third transistor is over the first semiconductor layer and the second semiconductor layer.
2. The semiconductor device according to claim 1 ,
wherein the third transistor comprises a region overlapping with the first transistor.
3. The semiconductor device according to claim 1 ,
wherein the third transistor comprises a region overlapping with the second transistor.
4. The semiconductor device according to claim 1 , further comprising a fourth layer,
wherein a fourth transistor included in the fourth layer comprises at least one of In and Zn in a fourth semiconductor layer, and
wherein the fourth transistor comprises a region overlapping with the third transistor.
5. The semiconductor device according to claim 1 ,
wherein a sensor module is placed on a side opposite to a side where the first transistor in the first layer is formed.
6. A semiconductor device comprising:
a first layer, a second layer, and a third layer over a substrate,
wherein a first transistor included in the first layer comprises a first semiconductor layer comprising Si,
wherein a second transistor included in the second layer comprises a second semiconductor layer comprising Ga,
wherein a third transistor included in the third layer comprises a third semiconductor layer comprising at least one of In and Zn,
wherein the first semiconductor layer of the first transistor is formed using the substrate,
wherein the second semiconductor layer of the second transistor is formed using a crystal obtained by crystal growth over the substrate,
wherein the second transistor has a recessed gate structure, and
wherein the third semiconductor layer of the third transistor is over the first semiconductor layer and the second semiconductor layer.
7. The semiconductor device according to claim 6 ,
wherein the third transistor comprises a region overlapping with the first transistor.
8. The semiconductor device according to claim 6 ,
wherein the third transistor comprises a region overlapping with the second transistor.
9. The semiconductor device according to claim 6 , further comprising a fourth layer,
wherein a fourth transistor included in the fourth layer comprises at least one of In and Zn in a fourth semiconductor layer, and
wherein the fourth transistor comprises a region overlapping with the third transistor.
10. The semiconductor device according to claim 6 ,
wherein a sensor module is placed on a side opposite to a side where the first transistor in the first layer is formed.
11. A semiconductor device comprising:
a first layer, a second layer, and a third layer over a substrate,
wherein a first transistor included in the first layer comprises a first semiconductor layer comprising Si,
wherein a second transistor included in the second layer comprises a second semiconductor layer comprising oxygen,
wherein a third transistor included in the third layer comprises a third semiconductor layer comprising at least one of In and Zn,
wherein the first semiconductor layer of the first transistor is formed using the substrate,
wherein the second semiconductor layer of the second transistor is formed using a crystal obtained by crystal growth over the substrate,
wherein the second transistor does not overlap with the first transistor, and
wherein the third semiconductor layer of the third transistor is over the first semiconductor layer and the second semiconductor layer.
12. The semiconductor device according to claim 11 ,
wherein the third transistor comprises a region overlapping with the first transistor.
13. The semiconductor device according to claim 11 ,
wherein the third transistor comprises a region overlapping with the second transistor.
14. The semiconductor device according to claim 11 , further comprising a fourth layer,
wherein a fourth transistor included in the fourth layer comprises at least one of In and Zn in a fourth semiconductor layer, and
wherein the fourth transistor comprises a region overlapping with the third transistor.
15. The semiconductor device according to claim 11 ,
wherein a sensor module is placed on a side opposite to a side where the first transistor in the first layer is formed.