In-nand read threshold voltage search system and method

1. A memory system comprising:

a controller configured to generate a read request; and

a memory device including:

at least one memory cell including a plurality of pages configured to store multiple data items; and

a pattern counter configured to:

receive, from the memory cell, a read data item, among the multiple data items, corresponding to the read request;

count, from the read data item, the number of cells reading as a particular value in multiple voltage level regions corresponding to multiple patterns for multiple pages among the plurality of pages, to generate count information; and

provide the count information to the controller,

wherein the controller is configured to:

receive the count information from the pattern counter;

identify a voltage level region with the least number of cells, among the multiple voltage level regions, based on the count information;

determine an optimal read threshold voltage based on the identified voltage level region; and

control the memory device to perform a next read operation by using the optimal read threshold voltage.

2. The memory system of claim 1 , wherein the controller includes:

a Gaussian model (GM) module configured to estimate a mean value in each of the multiple voltage level regions based on the count information, and estimate crossing points between neighboring voltage level regions; and

an optimal read voltage determiner configured to determine, as the optimal read threshold voltage, a voltage level at a crossing point between the identified voltage level region and a neighbor voltage level region thereof, among the crossing points.

3. The memory system of claim 2 , wherein the GM module estimates crossing points between probability density function (pdf) of two neighboring voltage level regions.

4. The memory system of claim 2 , wherein the GM module estimates the crossing points of two neighboring voltage level regions using estimated mean values of the neighboring voltage level regions and a fixed variance.

5. The memory system of claim 1 , wherein the number of cells reading as the particular value indicate the number of ones (1s) bits in each voltage level region.

6. The memory system of claim 5 , wherein the plurality of pages includes a most significant bit (MSB) page, a center significant bit (CSB) page and a least significant bit (LSB) page, and

the multiple voltage level regions include first to eighth voltage level regions.

7. The memory system of claim 6 , wherein the multiple patterns include a first pattern for the MSB page, and

the count information includes first count information indicating the number of cells in the first voltage level region, second count information indicating the number of cells in a range of the second to fifth voltage level regions, and third count information indicating the number of cells in a range of the sixth to eighth voltage level regions.

8. The memory system of claim 6 , wherein the multiple patterns include a second pattern for the CSB page, and

the count information includes first count information indicating the number of cells in a range of the first and second voltage level regions, second count information indicating the number of cells in a range of the third and fourth voltage level regions, third count information indicating the number of cells in a range of the fifth and sixth voltage level regions, and fourth count information indicating the number of cells in a range of the seventh and eighth voltage level regions.

9. The memory system of claim 6 , wherein the multiple patterns include a third pattern for the LSB page, and

the count information includes first count information indicating the number of cells in a range of the first to third voltage level regions, second count information indicating the number of cells in a range of the fourth to seventh voltage level regions, and third count information indicating the number of cells in the eighth voltage level region.

10. The memory system of claim 6 , wherein the multiple patterns include a first pattern for the MSB page, a second pattern for the CSB page, and a third pattern for the LSB page, and

wherein the count information includes:

first information which includes first count information indicating the number of cells in the first voltage level region, second count information indicating the number of cells in a range of the second to fifth voltage level regions, and third count information indicating the number of cells in a range of the sixth to eighth voltage level regions;

second information which includes fourth count information indicating the number of cells in a range of the first and second voltage level regions, fifth count information indicating the number of cells in a range of the third and fourth voltage level regions, sixth count information indicating the number of cells in a range of the fifth and sixth voltage level regions, and seventh count information indicating the number of cells in a range of the seventh and eighth voltage level regions; and

third information which includes eighth count information indicating the number of cells in a range of the first to third voltage level regions, ninth count information indicating the number of cells in a range of the fourth to seventh voltage level regions, and tenth count information indicating the number of cells in the eighth voltage level region.

11. A method for operating a memory system including a memory device including at least one memory cell having a plurality of pages and a controller, the method comprising:

receiving, by a pattern counter of the memory device, from the memory cell, a read data item, among multiple data items, corresponding to a read request from the controller;

counting, by the pattern counter, from the read data item, the number of cells reading as a particular value in multiple voltage level regions corresponding to multiple patterns for multiple pages among the plurality of pages, to generate count information;

providing, by the pattern counter, the count information to the controller;

receiving, by the controller, the count information from the pattern counter;

identifying, by the controller, a voltage level region with the least number of cells, among the multiple voltage level regions, based on the count information;

determining, by the controller, an optimal read threshold voltage based on the identified voltage level region; and

controlling, by the controller, the memory device to perform a next read operation by using the optimal read threshold voltage.

12. The method of claim 11 , wherein the identifying of the voltage level region includes: estimating a mean value in each of the multiple voltage level regions based on the count information, and finding crossing points between neighboring voltage level regions, and

wherein the determining of the optimal read threshold voltage includes: determining, as the optimal read threshold voltage, a voltage level at a crossing point between the identified voltage level region and a neighbor voltage level region thereof, among the crossing points.

13. The method of claim 12 , wherein the finding of the crossing points includes finding crossing points between probability density function (pdf) of two neighboring voltage level regions.

14. The method of claim 12 , wherein the finding of the crossing points includes estimating the crossing points of two neighboring voltage level regions using estimated mean values of the neighboring voltage level regions and a fixed variance.

15. The method of claim 11 , wherein the number of cells reading as the particular value indicate the number of ones (1s) bits in each voltage level region.

16. The method of claim 15 , wherein the plurality of pages includes a most significant bit (MSB) page, a center significant bit (CSB) page and a least significant bit (LSB) page, and

the multiple voltage level regions include first to eighth voltage level regions.

17. The method of claim 16 , wherein the multiple patterns include a first pattern for the MSB page, and

the count information includes first count information indicating the number of cells in the first voltage level region, second count information indicating the number of cells in a range of the second to fifth voltage level regions, and third count information indicating the number of cells in a range of the sixth to eighth voltage level regions.

18. The method of claim 16 , wherein the multiple patterns include a second pattern for the CSB page, and

the count information includes first count information indicating the number of cells in a range of the first and second voltage level regions, second count information indicating the number of cells in a range of the third and fourth voltage level regions, third count information indicating the number of cells in a range of the fifth and sixth voltage level regions, and fourth count information indicating the number of cells in a range of the seventh and eighth voltage level regions.

19. The method of claim 16 , wherein the multiple patterns include a third pattern for the LSB page, and

the count information includes first count information indicating the number of cells in a range of the first to third voltage level regions, second count information indicating the number of cells in a range of the fourth to seventh voltage level regions, and third count information indicating the number of cells in the eighth voltage level region.

20. The method of claim 16 , wherein the multiple patterns include a first pattern for the MSB page, a second pattern for the CSB page, and a third pattern for the LSB page, and

wherein the count information includes:

first information which includes first count information indicating the number of cells in the first voltage level region, second count information indicating the number of cells in a range of the second to fifth voltage level regions, and third count information indicating the number of cells in a range of the sixth to eighth voltage level regions;

second information which includes fourth count information indicating the number of cells in a range of the first and second voltage level regions, fifth count information indicating the number of cells in a range of the third and fourth voltage level regions, sixth count information indicating the number of cells in a range of the fifth and sixth voltage level regions, and seventh count information indicating the number of cells in a range of the seventh and eighth voltage level regions; and

third information which includes eighth count information indicating the number of cells in a range of the first to third voltage level regions, ninth count information indicating the number of cells in a range of the fourth to seventh voltage level regions, and tenth count information indicating the number of cells in the eighth voltage level region.