Ion trap for atomic clocks, mass spectrometry, atomic sensing, and quantum computing
The disclosed ion trap comprises a plurality of structurally continuous blades and a plurality of recessed control electrodes, wherein the plurality of structurally continuous blades includes at least two structurally continuous RF blades and at least two structurally continuous DC blades, wherein the recessed control electrodes are disposed on or within the structurally continuous blades, and wherein the ion trap is in a ring configuration. The ion trap enables fast readout of optical transitions using stationary laser beams and moving ions. This design fundamentally contrasts with traditional linear Paul traps that employ stationary ions and laser beams that are turned on or off. Because the RF and DC blades are structurally continuous, the trapping potential is continuous and harmonic. Instead of segmenting the blades as conventionally, segmented recessed control electrodes are utilized to reduce voltage noise that causes unwanted heating of the ions. Many benefits and commercial uses are described.
1. An ion trap comprising a plurality of structurally continuous blades and a plurality of recessed control electrodes that are capable of controlling ions, wherein said plurality of structurally continuous blades includes at least two structurally continuous RF blades and at least two structurally continuous DC blades, wherein said recessed control electrodes are disposed on or within said structurally continuous blades, and wherein said ion trap is in a ring configuration.
2. The ion trap of claim 1 , wherein said ring configuration contains two or more straightaway sections connected in a loop by rounded end sections.
3. The ion trap of claim 1 , wherein said plurality of structurally continuous blades is four structurally continuous blades consisting of two structurally continuous RF blades and two structurally continuous DC blades.
4. The ion trap of claim 1 , wherein two of said plurality of structurally continuous blades have blade tips with a blade-tip distance therebetween from about 1 micron to about 1 centimeter.
5. The ion trap of claim 4 , wherein said blade-tip distance is from about 10 microns to about 1 millimeter.
6. The ion trap of claim 1 , wherein said structurally continuous blades are created from printed-circuit-board wafers, ceramic wafers, semiconducting wafers, insulating wafers, glass, or a combination thereof.
7. The ion trap of claim 1 , wherein said ion trap has a trap length from about 1 millimeter to about 1 meter.
8. The ion trap of claim 7 , wherein said trap length is from about 1 centimeter to about 100 centimeters.
9. The ion trap of claim 1 , wherein said ions are present and are in continuous transport within said ion trap around said ring configuration.
10. The ion trap of claim 1 , wherein said ions are present and are stationary within said ion trap.
11. The ion trap of claim 1 , wherein said ions are positive ions with a charge of +1.
12. The ion trap of claim 11 , wherein said positive ions are selected from the group consisting of Ca + , Sr + , Ba + , Yb + , isotopes thereof, and combinations of the foregoing.
13. The ion trap of claim 1 , wherein said ions are positive ions with a charge of +2 or greater.
14. The ion trap of claim 1 , wherein said ions are negative ions with a charge of −1.
15. The ion trap of claim 14 , wherein said negative ions are S − and/or Se − .
16. The ion trap of claim 1 , wherein said ions are negative ions with a charge of −2 or more negative.
17. The ion trap of claim 1 , wherein said ion trap is configured to interrogate internal electronic, vibrational, and/or spin states of said ions via lasers.
18. The ion trap of claim 1 , wherein said ion trap further comprises at least two probe lasers.
19. The ion trap of claim 18 , wherein said at least two probe lasers are configured for Ramsey spectroscopy of said ions.
20. The ion trap of claim 1 , wherein said ion trap further comprises at least one cooling laser configured to cool said ions.
21. The ion trap of claim 1 , wherein said ion trap further comprises at least one laser configured for electron shelving.
22. The ion trap of claim 1 , wherein said ion trap further comprises an ion collimator configured to form a collimated beam of said ions.
23. The ion trap of claim 1 , wherein said ion trap further comprises an atom source configured to supply neutral atoms to be ionized.
24. The ion trap of claim 23 , wherein said ion trap further comprises an ionizer configured to excite neutral atoms in said atom source to form said ions.
25. The ion trap of claim 24 , wherein said ionizer is an optical ionizer.
26. The ion trap of claim 24 , wherein said ionizer is an electrical ionizer.
27. The ion trap of claim 23 , wherein said atom source is a solid-state electrochemical atom source.
28. The ion trap of claim 1 , wherein said ion trap further comprises an ion sink.
29. The ion trap of claim 28 , wherein said ion sink is a solid-state electrochemical ion sink.
30. The ion trap of claim 1 , wherein said ion trap further comprises an imaging system.
31. The ion trap of claim 1 , wherein said ion trap is disposed within a vacuum chamber.
32. An atomic clock comprising the ion trap of claim 1 .
33. An atomic sensor comprising the ion trap of claim 1 .
34. A mass spectrometer comprising the ion trap of claim 1 .
35. A quantum computer comprising the ion trap of claim 1 .
36. The quantum computer of claim 35 , wherein said quantum computer is an error-corrected quantum computer.