Piezoelectric element
A piezoelectric element includes a second electrode layer on a second surface of a single-crystal piezoelectric layer. A hole continuous with a through-hole is provided in the second electrode layer. The second electrode layer is made of Pt, Ti, Al, Cu, Au, Ag, Mg, or an alloy including at least one of the metals as a main ingredient. A third electrode layer is on one side of the second electrode layer opposite to the single-crystal piezoelectric layer. The third electrode layer includes at least a portion outside of an edge of the hole with a distance maintained relative to the edge of the hole when viewed in a direction perpendicular or substantially perpendicular to the second surface. The third electrode layer is made of Ni or an alloy including Ni as a main ingredient.
1 . A piezoelectric element comprising:
a single-crystal piezoelectric layer including a first surface, a second surface on an opposite side to the first surface, and a through-hole penetrating from the first surface to the second surface;
a first electrode layer on a first surface side of the single-crystal piezoelectric layer;
a second electrode layer on a second surface side of the single-crystal piezoelectric layer and including a hole continuous with the through-hole, at least a portion of the second electrode layer being opposed to the first electrode layer with the single-crystal piezoelectric layer interposed therebetween; and
a third electrode layer on a side of the second electrode layer opposite to the single-crystal piezoelectric layer and including at least a portion outside of an edge of the hole with a distance maintained relative to the edge of the hole when viewed in a direction perpendicular or substantially perpendicular to the second surface; wherein
the second electrode layer is made of Pt, Ti, Al, Cu, Au, Ag, or Mg, or an alloy including at least one of Pt, Ti, Al, Cu, Au, Ag, or Mg as a main ingredient; and
the third electrode layer is made of Ni or an alloy including Ni as a main ingredient.
2 . The piezoelectric element according to claim 1 , wherein a material of the third electrode layer has a smaller rate of etching by CF 4 gas than a material of the second electrode layer.
3 . A piezoelectric element comprising:
a single-crystal piezoelectric layer including a first surface, a second surface on an opposite side to the first surface, and a through-hole penetrating from the first surface to the second surface;
a first electrode layer on a first surface side of the single-crystal piezoelectric layer;
a second electrode layer on a second surface side of the single-crystal piezoelectric layer and including a hole continuous with the through-hole, at least a portion of the second electrode layer being opposed to the first electrode layer with the single-crystal piezoelectric layer interposed therebetween; and
a third electrode layer on a side of the second electrode layer opposite to the single-crystal piezoelectric layer and including at least a portion outside of an edge of the hole with a distance maintained relative to the edge of the hole when viewed in a direction perpendicular or substantially perpendicular to the second surface; wherein
a material of the third electrode layer has a smaller rate of etching by CF 4 gas than a material of the second electrode layer.
4 . The piezoelectric element according to claim 1 , wherein the third electrode layer includes an outer peripheral edge surrounding the edge of the hole with a distance maintained relative to the edge of the hole when viewed in the direction perpendicular or substantially perpendicular to the second surface.
5 . The piezoelectric element according to claim 1 , wherein a material of the third electrode layer has a smaller rate of etching by CF 4 gas than a material of the single-crystal piezoelectric layer.
6 . The piezoelectric element according to claim 1 , wherein
the hole penetrates through the second electrode layer in the direction perpendicular or substantially perpendicular to the second surface; and
a connection electrode is continuously provided over a region from a position on an inner surface defining the hole in the second electrode layer to a portion of the third electrode layer facing the hole.
7 . The piezoelectric element according to claim 6 , wherein a minimum size of the distance is greater than an average thickness of the second electrode layer.
8 . The piezoelectric element according to claim 6 , wherein an average thickness of the second electrode layer is smaller than an average thickness of the third electrode layer.
9 . The piezoelectric element according to claim 6 , wherein a recess continuous with the hole in the second electrode layer is provided in the third electrode layer.
10 . The piezoelectric element according to claim 9 , wherein the connection electrode is disposed over an entire or substantially an entire inner surface of the recess.
11 . The piezoelectric element according to claim 1 , wherein the single-crystal piezoelectric layer is made of a lithium compound.
12 . The piezoelectric element according to claim 11 , wherein the lithium compound is lithium niobate or lithium tantalate.
13 . The piezoelectric element according to claim 1 , wherein the second electrode layer includes Pt as a main ingredient.
14 . The piezoelectric element according to claim 1 , wherein the first electrode layer, the second electrode layer, and the third electrode layer each include an epitaxially grown film.
15 . The piezoelectric element according to claim 1 , further comprising:
a base portion supporting a multilayer body including at least the first electrode layer, the single-crystal piezoelectric layer, the second electrode layer, and the third electrode layer; wherein
the base portion is on one side of the multilayer body opposite to the first electrode layer and extends along a peripheral edge of the multilayer body when viewed in a lamination direction of the multilayer body.
16 . The piezoelectric element according to claim 15 , wherein the base portion includes a silicon oxide layer on a side closer to the multilayer body and a single-crystal silicon layer on an opposite side to the multilayer body.
17 . The piezoelectric element according to claim 15 , wherein a through-slit is provided in the multilayer body to communicate with a cavity inside the base portion when viewed in the lamination direction.
18 . The piezoelectric element according to claim 3 , wherein the third electrode layer includes an outer peripheral edge surrounding the edge of the hole with a distance maintained relative to the edge of the hole when viewed in the direction perpendicular or substantially perpendicular to the second surface.
19 . The piezoelectric element according to claim 3 , wherein a material of the third electrode layer has a smaller rate of etching by CF 4 gas than a material of the single-crystal piezoelectric layer.
20 . The piezoelectric element according to claim 3 , wherein
the hole penetrates through the second electrode layer in the direction perpendicular or substantially perpendicular to the second surface; and
a connection electrode is continuously provided over a region from a position on an inner surface defining the hole in the second electrode layer to a portion of the third electrode layer facing the hole.